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Photonics 2018, 5(2), 13;

Ge-Core/a-Si-Shell Nanowire-Based Field-Effect Transistor for Sensitive Terahertz Detection

Laboratory for Future Interdisciplinary Research of Science and Technology, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552, Japan
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, Japan
Author to whom correspondence should be addressed.
Received: 19 March 2018 / Revised: 24 May 2018 / Accepted: 27 May 2018 / Published: 29 May 2018
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Although terahertz technology has demonstrated strong potential for various applications, detectors operating in the terahertz region are yet to be fully established. Numerous designs have been proposed for sensitive terahertz detection, with a nanowire-based field-effect transistor (FET) being one of the most promising candidates. In this study, we use a Ge-core/a-Si-shell nanowire coupled to a bow-tie antenna to fabricate a FET structure for terahertz detection. We achieved high responsivity and low noise equivalent power (NEP) upon irradiation at 1.63 THz. The proposed sensitive terahertz detector will further promote the development of terahertz technology in fields such as spectroscopic analysis and imaging. View Full-Text
Keywords: terahertz; nanowire; photodetector; planar antenna; field-effect transistor terahertz; nanowire; photodetector; planar antenna; field-effect transistor

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Deng, X.; Simanullang, M.; Kawano, Y. Ge-Core/a-Si-Shell Nanowire-Based Field-Effect Transistor for Sensitive Terahertz Detection. Photonics 2018, 5, 13.

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