Search Results (1,841)

The threshold voltage (Vth) of p-GaN gate enhancement-mode (E-mode) high electron mobility transistors (HEMTs) on silicon substrates grown by metal–organic chemical vapor deposition (MOCVD) is often limited to 1.0–1.5 V. Apart from the low Mg acceptor activation rate, the non-uniform vertical Mg distribution in thin p-GaN layers is also a key bottleneck limiting Vth. This work reveals that the vertical distribution (not only magnitude) of Mg doping fundamentally influences Vth by modulating the charge centroid and electric field coupling to the heterointerface. Through bis(cyclopentadienyl)magnesium (Cp₂Mg) flow modulation, surfactant-assisted growth, and growth rate adjustment, the vertical Mg doping uniformity within the 80 nm p-GaN layer was improved while effectively suppressing Mg out-diffusion. A short-cycle gate-first self-aligned process was used to fabricate the devices, and the results showed that the improved Mg vertical distribution led to a significant Vth enhancement by 0.75 V. Technology Computer-Aided Design (TCAD) simulations further demonstrated that the uniform doping profile builds a stronger negative space charge field beneath the gate, raising the energy band and increasing Vth. This work not only presents practical strategies, but also establishes a direct physical link between vertical Mg doping distribution and Vth in Si-based E-mode HEMTs. Full article

A comparative study was undertaken to examine the V_TH stability of p-GaN gate high electron mobility transistors (HEMTs) without the p-NiO reduced surface field (RESURF) terminal and with the RESURF terminal under off-state drain voltage stress and negative gate stress, involving in-depth analyses of the net negative charge accumulation processes in the gate region and buffer layer, thereby revealing the degradation mechanisms of the devices. The findings indicate that the p-NiO RESURF terminal effectively enhances the stability of V_TH under off-state drain voltage stress by injecting holes into the buffer layer and hence initiating a light-pumping effect, and simultaneously also by flattening the electric field peak on the drain side beneath the gate and thus significantly mitigating hole loss in the gate region and electron capture in the buffer layer. This study provides a theoretical basis for the application of the p-NiO RESURF terminal in p-GaN HEMTs. Full article

Biosensors based on electrolyte-gated organic field-effect transistors (EGOFETs) have attracted considerable attention due to their advantages, including low cost, inherent signal amplification, and low-voltage operation. A critical step influencing sensing performance is the integration of specific receptors onto the device surface. Among various strategies, the covalent immobilization of biorecognition elements onto gold surfaces via thiol chemistry is one of the most widely used approaches. In this study, we report the optimization of a mixed self-assembled monolayer (SAM) composed of 11-mercaptoundecanoic acid (11-MUA) and 3-mercaptopropionic acid (3-MPA) for label-free detection of human IgG using EGOFETs. The quality of the SAM was systematically modulated by varying the total concentration from 10 to 400 mM and characterized using X-ray Photoelectron Spectroscopy (XPS), Electrochemical Impedance Spectroscopy (EIS), Cyclic Voltammetry (CV), and Atomic Force Microscopy (AFM). The results revealed that a concentration of 50 mM yielded a densely packed and well-ordered monolayer. After covalent immobilization of anti-IgG antibodies via 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride/N-hydroxysuccinimide (EDC/NHS) chemistry and subsequent blocking with ethanolamine and bovine serum albumin (BSA), the functionalized gate electrodes were integrated into poly(3-hexylthiophene) (P3HT)-based EGOFETs. Electrical measurements demonstrated that EGOFET biosensors functionalized with the 50 mM SAM achieved optimal sensing performance. The devices exhibited a highly linear response (R² = 0.998) over a wide concentration range from 1 fM to 10 nM, with a LOD of 2.82 fM, and showed excellent selectivity against non-target immunoglobulins A and M (IgA and IgM). This SAM concentration optimization strategy provides a versatile approach for engineering high-performance EGOFET biosensors, with potential applicability to a broad range of disease biomarkers. Full article

In this study, we investigate the impact of processing strategies on the nanoscale morphology and photophysical behavior of donor–acceptor thin films composed of the polymeric donor PBDTTTPD and the n-type acceptor PNDI(2HD)2T. The blend morphology and interfacial characteristics were systematically tuned using three distinct fabrication techniques: spin-coating, convective self-assembly, and space-confined solvent vapor annealing. Atomic force microscopy and photoluminescence spectroscopy were employed to elucidate structure–property correlations relevant to all-polymer optoelectronic systems. Films processed via convective self-assembly exhibited nanoscale features with extensive donor–acceptor intermixing, leading to the most efficient photoluminescence quenching of nearly 85%, indicative of enhanced exciton dissociation and charge transfer. In contrast, as-cast films displayed moderately mixed morphologies with approximately 81% quenching, serving as a reference state. The solvent vapor annealing method induced pronounced phase segregation and the formation of larger domains, resulting in reduced photoluminescence quenching efficiency of about 52%. These findings demonstrate that the nanoscale morphology, and consequently the photophysical response, of PBDTTTPD:PNDI(2HD)2T blends can be precisely tailored through processing, providing valuable design guidelines for all-polymer optoelectronic applications such as organic photovoltaics and field-effect transistors. Full article

Design and fabrication of high-performance organic semiconductors are still challenging. Here, we designed new D-(A)n type zinc porphyrin end-capped ethynylene-7-(4-hexyl-thiophen-2-yl)-2,1,3-benzothiadiazole (EBTT) oligomers by linking 5,10,15-trisphenyl porphyrin zinc (ZnTPP) with length-variable EBTT oligomers (at the 20-position of porphyrin) [ZnTPP(EBTT)_n (n = 1–6)]. The influence of oligomer length on molecular structures, orbital energies, electronic absorption spectra, ionization energies, electronic affinities, and reorganization energies was systematically studied through density functional theory. The charge-carrier mobility of the simulated crystals and the power conversion efficiencies (PCE) using PCBM as the accepter were also predicted. ZnTPP(EBTT)₆ show excellent hole/electron mobility of 76.161/9.395 cm²V⁻¹s⁻¹ and extremely high PCE of 25.45%. This work would have significance for the design and synthesis of organic semiconductor materials with large charge-carrier mobility and high PCE performance. Full article

Graphene-based ion-sensitive field-effect transistors can operate as biosensors by utilizing the formation of an electric double layer at the interface between the electrolyte and the graphene channel, enabling high sensitivity, scalability, and cost-effective fabrication. In this work, we focus on the working principles and current methodologies associated with these devices, making a comparative analysis of different models that describe the electric double layer in the electrolyte, referring to sodium ions (Na⁺) as a case study for the detection performance of the graphene biosensor, and taking into account the impact of graphene quantum capacitance. Our study addresses the sensitivity of graphene field-effect transistors within the framework of the Gouy–Chapman model, as well as the Stern model, computing device sensitivities of 3200 V/M and 5500 V/M, respectively. By incorporating the impact of graphene’s quantum capacitance in the calculations, increased sensitivity up to 5620 V/M was found. The present work shines light on the rationalization of graphene-based biosensors’ operation and performance. Full article

Field-effect transistor (FET) biosensors using graphene have become one of the most promising biosensing platforms for the early diagnosis of diseases with features such as high sensitivity, label-free detection and application compatibility with point-of-care systems. Herein, we critically discuss recent advances in graphene FET (GFET) biosensor development toward clinically relevant biomarkers associated with representative diseases including cancer, neurodegenerative disease, infectious disease, and inflammatory conditions. Recent progress was reviewed to evaluate GFET architectures, surface functionalization methods, and detection quality. The biomarkers explored were clusterin in Alzheimer’s disease, thrombin in coagulopathy, estrogen receptor α (ER-α) in breast cancer, Carcinoembryonic antigen in lung cancer, microRNAs for malignant tumors, exosomes derived from HepG2 for the hepatocellular carcinoma (HCC) cell line, interleukin-6 (IL-6) for chronic obstructive pulmonary disease (COPD), Polyclonal antibodies and antigens (P24) for HIV and prostate-specific antigen for prostate cancer. The developed devices demonstrate ultralow detection limits at femtomolar to attomolar concentrations with the aid of designed antibodies, aptamers and nanomaterials. Herein, this review presents the sensing mechanisms and biomedical application of various GFET platforms, focusing on their emerging potential as next-generation platforms for rapid, non-invasive and point-of-care diagnostics. Full article

Organic field-effect transistors (OFETs) incorporating a triple insulating layer of polymethyl methacrylate (PMMA), silicon dioxide (SiO₂), and zinc oxide (ZnO) were successfully fabricated on glass and on flexible PET substrates. The insulating layers significantly enhanced device performance, with the OFETs achieving field-effect mobility (µ) values more than twice as high as those reported in the literature. Specifically, mobility values of ~6.75 cm²/V·s were recorded on glass, ~7.14 cm²/V·s on flexible substrates before bending, and ~6.88 cm²/V·s on flexible substrates after bending. Threshold voltages (V_th) of −7 V and −9 V were estimated for the flexible OFETs before and after bending, respectively, along with a high on/off current ratio, exceeding 10³ for all devices. Minimal hysteresis in the transfer and output characteristics indicated excellent, trap-free interaction between the insulating layers and the pentacene. The high dielectric constant of the PMMA/SiO₂/ZnO triple insulating layers was identified as a critical factor driving the exceptional performance, stability, and low hysteresis of the OFETs. These results underscore the pivotal role of advanced insulating layers in optimizing OFET performance and durability. Full article

As emerging nonvolatile memory devices, ferroelectric field-effect transistors (FeFETs) have attracted significant attention for memory applications. However, due to the stochastic nature of fabrication processes and material properties, FeFETs exhibit pronounced device-to-device (DTD) variations, leading to threshold voltage dispersion and inconsistency in memory window (MW), which severely constrain array-level performance and reliability. In this study, a compact model-based variability analysis methodology for FeFETs has been proposed. Specifically, the Preisach ferroelectric (FE) hysteresis model was combined with the MIT Virtual Source (MVS) physical compact model to establish a macro-model for FeFETs, and statistical simulations were performed to evaluate device-level variations. Using the proposed framework, how fluctuations in two key FE parameters, film thickness (t_FE) and coercive field (E_C), affect FeFET transfer characteristics, threshold voltage (V_TH), and MW was systematically investigated. Monte Carlo (MC) simulations were further conducted to quantify the distribution width and statistical features of V_TH under different variability scenarios. The results indicate that random fluctuations in process-related parameters broaden the FeFET I_d-V_g characteristics, induce shifts in high/low threshold voltages, and cause MW variations. Moreover, when t_FE and E_C fluctuate simultaneously, the dispersions of V_TH and MW become significantly larger than those induced by a single-parameter fluctuation. The proposed compact-modeling framework and variability analysis approach enables the efficient evaluation of parameter tolerance and performance margin in FeFET arrays, providing guidance for storage-array design. Full article

The growing demand for intelligent environmental monitoring is driving the advancement of high-performance, low-cost, and highly integrated gas sensors. Silicon-compatible semiconductor gas sensors provide a promising platform to achieve this goal by leveraging their compatibility with complementary metal–oxide semiconductor (CMOS) processes. The established mass-manufacturing capabilities of micro-electromechanical systems (MEMS) and the high sensitivity and signal amplification characteristics of field effect transistors (FETs) in recent years have made the development of next-generation sensing devices feasible. In this review, we systematically summarize the latest advances in silicon-compatible gas sensors, with a focus on MEMS and FET technologies. We discuss their sensing mechanisms and performance optimization strategies, and further highlight the evolution of gas sensor technology toward on-chip intelligent olfactory systems that integrate sensing, computing, and storage capabilities. Full article

Monitoring uric acid (UA) concentration is crucial for human health, enabling early detection and prevention of metabolic disorders as well as assessing renal function and overall metabolic balance. Herein, we developed a field-effect transistor (FET)-based UA biosensor using hydrothermally synthesized vertical zinc oxide (ZnO) nanorods (NRs) and uricase. The fabricated FET biosensor was tested in phosphate-buffered saline (PBS) at increasing UA concentrations to evaluate its biosensing performance. The FET biosensor yields a sensitivity of 12.45 μA·mM⁻¹·cm⁻², covering a dynamic range of 0.05–2.75 mM. The calculated detection limit was ~0.0043 mM. The improved sensing performance results in a substantial enhancement of both detection sensitivity and limit of detection compared to the traditional lateral electrode setup. Additionally, selectivity, storage stability, fabrication reproducibility, and applicability for serum UA detection were evaluated. Overall, the vertical electrode configuration of the UA biosensor has the potential to be further extended for the sensitive detection of additional biomarkers. Full article

This paper proposes a corner analysis approach for CMOS circuits taking into the account radiation effects. The presented simulation approach is implemented using the open-source design automation (EDA) software QUCS-S 25.2.0 and Ngspice 45. It was developed a radiation-sensitive field-effect transistor (RADFET) SPICE macromodel representing threshold voltage shift versus radiation dose. The extraction procedure for this model is based on statistical measurements of pMOS transistors and process corner models (Slow, Typical, Fast) and involves percentile analysis. The article proposes an original design of the RADFET-based radiation sensor with RADFET device and CMOS readout circuit placed on the same die, which allows us to simplify the dosimeter schematic. The sensor output parameter dependency on process parameters, supply voltage, and temperature was investigated using the proposed simulation approach. Full article

This paper proposes a design method for broadband power amplifiers based on bandpass filter matching networks. The approach incorporates transistor complex impedance transformation into the filter matching network design using a low-pass filter design model. By integrating CRLH and D-CRLH structural elements, it forms LC matching structures with a bandpass filter response. This structure achieves wide-band impedance transformation while also providing excellent frequency-selective capabilities. To validate this approach, a 0.7–1.3 GHz bandpass filtering power amplifier was designed and fabricated. It achieves in-band saturated output power of 38.4–41 dBm, drain efficiency of 41–58%, and power gain exceeding 12 dB. The gain flatness is limited to within ±2 dB. Experimental measurements validate the proposed design methodology. This approach imparts exceptional frequency selectivity and superior filtering performance to the system while enabling effective circuit miniaturization. Moreover, it exhibits considerable engineering significance and promising application potential in key fields such as satellite communications, radar monitoring, and digital broadcasting. Full article

Ion-Sensitive Field-Effect Transistors (ISFETs) have been extensively used to detect various biomolecules, as the intrinsic charge of these molecules can change the transistor’s current or threshold voltage. Recently, realizing ISFET biosensors with better performance has attracted much attention. This paper proposes a novel ISFET biosensor by using the advantage of Tunnel Field-Effect Transistor (TFET). The device characteristics and sensing performance are systematically investigated by Silvaco Atlas TCAD simulations. Due to the novel structural design, the proposed sensor achieves a maximum current sensitivity (S_IDSmax) of 99.99% and a threshold voltage sensitivity (S_VTH) of 124%. To provide optimization guidelines, this work further explored the effect of geometric dimensions and gate dielectric materials on device performance. The excellent performance of the proposed biosensor makes it a promising candidate for future low-power, high-sensitivity biodetection applications. Full article

Tunnel Field-Effect Transistors (TFETs) are being explored for ultra-low-power very-large-scale integrated circuits (VLSI) because their band-to-band tunnelling (BTBT) transport permits subthreshold swings (SS) below the 60 mV/dec thermionic limit at room temperature, along with significantly lower leakage than MOSFETs. This paper presents a systematic TCAD study of DG-TFETs that maps how four primary knobs–gate dielectric materials, silicon channel thickness, temperature variation, and different channel material shape key figures of merit: the ON current (I_ON), OFF current (I_OFF), threshold voltage (V_TH), SS, and the I_ON/I_OFF switching ratio. High-k gate enhances gate-to-channel coupling and boost tunnelling efficiency; rigorous body scaling enhances electrostatic control; and targeted source-proximal doping profiles elevate I_ON while minimizing leakage. We also measure the trade-offs between I_ON, SS, and I_OFF that occur when scaling is performed at the same time. This shows that careful coordination is needed instead of just tuning one parameter. This is a simulated work, and the physical models are calibrated to experimental TFET data and all parameters are checked against previously reported results. The device reaches SS = 31.4 mV/dec, V_TH = 0.46 V, I_ON = 5.91 × 10⁻⁵ A and an I_ON/I_OFF of about 4.5 × 10¹¹. This shows that it can switch quickly with little leakage. The design insights that come from this work provide useful advice regarding how to choose gate dielectric material, structures, and doping strategies to add DG-TFETs to the next generation of low-power semiconductor technologies. Full article