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Open AccessFeature PaperArticle

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

1
NICE Laboratory, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
2
Department of Electronics and Control Engineering, Hanbat National University, Daejeon 34158, Korea
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(3), 539; https://doi.org/10.3390/electronics9030539
Received: 26 February 2020 / Revised: 17 March 2020 / Accepted: 20 March 2020 / Published: 24 March 2020
This paper presents a K u -band RF receiver front-end with broadband impedance matching and amplification. The major building blocks of the proposed receiver front-end include a wideband low-noise amplifier (LNA) employing a cascade of resistive feedback inverter (RFI) and transformer-loaded common source amplifier, a down-conversion mixer with push–pull transconductor and complementary LO switching stage, and an output buffer. Push–pull architecture is employed extensively to maximize the power efficiency, bandwidth, and linearity. The proposed two-stage LNA employs the stagger-tuned frequency response in order to extend the RF bandwidth coverage. The input impedance of RFI is carefully analyzed, and a wideband input matching circuit incorporating only a single inductor is presented along with useful equivalent impedance matching models and detailed design analysis. The prototype chip was fabricated in 45-nm CMOS technology and dissipates 78 mW from a 1.2-V supply while occupying chip area of 0.29 mm 2 . The proposed receiver front-end provides 21 dB conversion gain with 7 GHz IF bandwidth, 3.5 dB NF, −15.7 dBm IIP 3 while satisfying <−10 dB input matching over the whole input band. View Full-Text
Keywords: complementary; push–pull; resistive feedback inverter; stagger tuning; wideband matching; wideband LNA complementary; push–pull; resistive feedback inverter; stagger tuning; wideband matching; wideband LNA
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Mahmood, H.U.; Utomo, D.R.; Han, S.-K.; Kim, J.; Lee, S.-G. A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology. Electronics 2020, 9, 539.

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