Mahmood, H.U.; Utomo, D.R.; Han, S.-K.; Kim, J.; Lee, S.-G.
A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology. Electronics 2020, 9, 539.
https://doi.org/10.3390/electronics9030539
AMA Style
Mahmood HU, Utomo DR, Han S-K, Kim J, Lee S-G.
A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology. Electronics. 2020; 9(3):539.
https://doi.org/10.3390/electronics9030539
Chicago/Turabian Style
Mahmood, Hafiz Usman, Dzuhri Radityo Utomo, Seok-Kyun Han, Jusung Kim, and Sang-Gug Lee.
2020. "A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology" Electronics 9, no. 3: 539.
https://doi.org/10.3390/electronics9030539
APA Style
Mahmood, H. U., Utomo, D. R., Han, S.-K., Kim, J., & Lee, S.-G.
(2020). A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology. Electronics, 9(3), 539.
https://doi.org/10.3390/electronics9030539