Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness
Cha, H.-S.; Jeong, H.-S.; Hwang, S.-H.; Lee, D.-H.; Kwon, H.-I. Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness. Electronics 2020, 9, 2196. https://doi.org/10.3390/electronics9122196
Cha H-S, Jeong H-S, Hwang S-H, Lee D-H, Kwon H-I. Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness. Electronics. 2020; 9(12):2196. https://doi.org/10.3390/electronics9122196
Chicago/Turabian StyleCha, Hyun-Seok; Jeong, Hwan-Seok; Hwang, Seong-Hyun; Lee, Dong-Ho; Kwon, Hyuck-In. 2020. "Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness" Electronics 9, no. 12: 2196. https://doi.org/10.3390/electronics9122196