Article Versions Notes

Cha H-S, Jeong H-S, Hwang S-H, Lee D-H, Kwon H-I. Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness. Electronics. 2020; 9(12):2196. https://doi.org/10.3390/electronics9122196

Cha, Hyun-Seok, Hwan-Seok Jeong, Seong-Hyun Hwang, Dong-Ho Lee, and Hyuck-In Kwon. 2020. "Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness" Electronics 9, no. 12: 2196. https://doi.org/10.3390/electronics9122196

Cha, H.-S., Jeong, H.-S., Hwang, S.-H., Lee, D.-H., & Kwon, H.-I. (2020). Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness. Electronics, 9(12), 2196. https://doi.org/10.3390/electronics9122196