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Accurately Modeling of Zero Biased Schottky-Diodes at Millimeter-Wave Frequencies

1
Erzia Technologies, C/Josefina de la Maza 4 - 2°, 39012 Santander, Spain
2
Information and Telecommunication Systems Laboratory, Université Abdelmalek Essaâdi, Tetouan 2117, Morocco
3
Department of Communications Engineering, Laboratorios de Ingenieria de Telecomunicación Profesor José Luis García García, University of Cantabria, Plaza de la Ciencia, 39005 S/N Santander, Spain
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(6), 696; https://doi.org/10.3390/electronics8060696
Received: 14 May 2019 / Revised: 13 June 2019 / Accepted: 17 June 2019 / Published: 20 June 2019
(This article belongs to the Special Issue Terahertz Technology and Its Applications)
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Abstract

This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSSTM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band. View Full-Text
Keywords: W band; Schottky Diode Detectors; ZBD modeling; wire bonding; flip-chip W band; Schottky Diode Detectors; ZBD modeling; wire bonding; flip-chip
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Gutiérrez, J.; Zeljami, K.; Fernández, T.; Pascual, J.P.; Tazón, A. Accurately Modeling of Zero Biased Schottky-Diodes at Millimeter-Wave Frequencies. Electronics 2019, 8, 696.

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