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X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

1
School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
2
The Project Management Center, Equipment Development Department, Beijing 100000, China
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(11), 1312; https://doi.org/10.3390/electronics8111312
Received: 19 September 2019 / Revised: 1 November 2019 / Accepted: 6 November 2019 / Published: 8 November 2019
(This article belongs to the Section Microelectronics and Optoelectronics)
This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 μm GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51–59% PAE (Power Added Efficiency) and 19.8–21.2 dB power gain with a saturated power of 40.8–42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 × 2.4 mm2. View Full-Text
Keywords: GaN; power amplifier; high efficiency GaN; power amplifier; high efficiency
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Jin, C.; Gao, Y.; Chen, W.; Huang, J.; Wang, Z.; Mo, J.; Yu, F. X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning. Electronics 2019, 8, 1312.

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