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X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, China
The Project Management Center, Equipment Development Department, Beijing 100000, China
Author to whom correspondence should be addressed.
Electronics 2019, 8(11), 1312;
Received: 19 September 2019 / Revised: 1 November 2019 / Accepted: 6 November 2019 / Published: 8 November 2019
(This article belongs to the Section Microelectronics and Optoelectronics)
This paper presents a high-efficiency continuous class B power amplifier MMIC (Monolithic Microwave Integrated Circuit) from 8 GHz to 10.5 GHz, fabricated with 0.25 μm GaN-on-SiC technology. The Pedro load-line method was performed to calculate the optimum load of the GaN field-effect transistor (FET) for efficiency enhancement. Optimized by an output second-harmonic tuned network, fundamental to second-harmonic impedance, mapping was established point-to-point within a broad frequency band, which approached the classic continuous class B mode with an expanded high-efficiency bandwidth. Moreover, the contribution to the output capacitance of the FET was introduced into the output second-harmonic tuned network, which simplified the structure of the output matching network. Assisted by the second-harmonic source-pull technique, the input second-harmonic tuned network was optimized to improve the efficiency of the power amplifier over the operation band. The measurement results showed 51–59% PAE (Power Added Efficiency) and 19.8–21.2 dB power gain with a saturated power of 40.8–42.2 dBm from 8 GHz to 10.5 GHz. The size of the chip was 3.2 × 2.4 mm2. View Full-Text
Keywords: GaN; power amplifier; high efficiency GaN; power amplifier; high efficiency
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Jin, C.; Gao, Y.; Chen, W.; Huang, J.; Wang, Z.; Mo, J.; Yu, F. X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning. Electronics 2019, 8, 1312.

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