RETRACTED: Kang et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268

Shinyoung Kang; Juyoung Lee; Myounggon Kang; Yunheub Song

doi:10.3390/electronics10040408

,

and

¹

Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea

²

Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea

³

Department of Electronics Engineering, Korea National University of Transportation, 50 Daehak-ro, Chungju-si, Chungbuk 380-702, Korea

^*

Authors to whom correspondence should be addressed.

Electronics2021, 10(4), 408;https://doi.org/10.3390/electronics10040408

This article belongs to the Special Issue New CMOS Devices and Their Applications

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The authors and journal retract the article, “Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications” [], cited above.

Following its publication, the authors contacted the editorial office about incorrect use of materials and data used without authorization (as shown in Figure 1, the TEM images, and XRD data used).

The article [] describes the use of a superlattice device based on the GeTe/Sb₂Te₃ material (Figure 1b). The device actually measured Ti-doped material, not GeTe/Sb₂Te₃ material. Further details were provided by the university that confirmed the extent of the issues described.

This retraction was approved by the Editor-in-Chief of the journal Electronics. The authors would like to apologize for any inconvenience caused to the readers by these changes.

Reference

Kang, S.; Lee, J.; Kang, M.; Song, Y. RETRACTED: Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268. [Google Scholar] [CrossRef]

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RETRACTED: Kang et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268

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