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Volume 9
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10.3390/electronics9081268
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Retraction published on 8 February 2021, see Electronics 2021, 10(4), 408.
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Article

RETRACTED: Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications

by
Shinyoung Kang
1,
Juyoung Lee
2,
Myounggon Kang
3,* and
Yunheub Song
1,*
1
Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
2
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea
3
Department of Electronics Engineering, Korea National University of Transportation, 50 Daehak-ro, Chungju-si, Chungbuk 380-702, Korea
*
Authors to whom correspondence should be addressed.
Electronics 2020, 9(8), 1268; https://doi.org/10.3390/electronics9081268
Submission received: 13 July 2020 / Revised: 28 July 2020 / Accepted: 6 August 2020 / Published: 7 August 2020
(This article belongs to the Special Issue New CMOS Devices and Their Applications)
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Abstract

In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb2Te3 alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb2Te3 (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.
Keywords: interfacial phase-change memory; phase-change memory; artificial synaptic device; superlattice; neuromorphic devices interfacial phase-change memory; phase-change memory; artificial synaptic device; superlattice; neuromorphic devices

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MDPI and ACS Style

Kang, S.; Lee, J.; Kang, M.; Song, Y. RETRACTED: Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268. https://doi.org/10.3390/electronics9081268

AMA Style

Kang S, Lee J, Kang M, Song Y. RETRACTED: Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics. 2020; 9(8):1268. https://doi.org/10.3390/electronics9081268

Chicago/Turabian Style

Kang, Shinyoung, Juyoung Lee, Myounggon Kang, and Yunheub Song. 2020. "RETRACTED: Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications" Electronics 9, no. 8: 1268. https://doi.org/10.3390/electronics9081268

APA Style

Kang, S., Lee, J., Kang, M., & Song, Y. (2020). RETRACTED: Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics, 9(8), 1268. https://doi.org/10.3390/electronics9081268

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