Next Article in Journal
Tolerating Permanent Faults in the Input Port of the Network on Chip Router
Previous Article in Journal
A Fresh View on the Microarchitectural Design of FPGA-Based RISC CPUs in the IoT Era
Article Menu

Export Article

Open AccessArticle
J. Low Power Electron. Appl. 2019, 9(1), 10; https://doi.org/10.3390/jlpea9010010

Analytical Performance of the Threshold Voltage and Subthreshold Swing of CSDG MOSFET

Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban 4041, South Africa
*
Authors to whom correspondence should be addressed.
Received: 9 November 2018 / Revised: 30 December 2018 / Accepted: 8 January 2019 / Published: 26 February 2019
Full-Text   |   PDF [3936 KB, uploaded 26 February 2019]   |  

Abstract

In this research work, the threshold voltage and subthreshold swing of cylindrical surrounding double-gate (CSDG) MOSFET have been analyzed. These analyses are based on the analytical solution of 2D Poisson equation using evanescent-mode analysis (EMA). This EMA provides the better approach in solving the 2D Poisson equation by considering the oxide and Silicon regions as a two-dimensional problem, to produce physically consistent results with device simulation for better device performance. Unlike other models such as polynomial exponential and parabolic potential approximation (PPA) which consider the oxide and silicon as one-dimensional problem. Using the EMA, the 2D Poisson equation is decoupled into 1D Poisson equation which represent the long channel potential and 2D Laplace equation describing the impacts of short channel effects (SCEs) in the channel potential. Furthermore, the derived channel potential close-form expression is extended to determine the threshold voltage and subthreshold behavior of the proposed CSDG MOSFET device. This model has been evaluated with various device parameters such as radii Silicon film thickness, gate oxide thickness, and the channel length to analyze the behavior of the short channel effects in the proposed CSDG MOSFET. The accuracy of the derived expressions have been validated with the mathematical and numerical simulation. View Full-Text
Keywords: CSDG MOSFET; short channel effects; channel engineering; DG MOSFET; subthreshold swing; microelectronics; nanotechnology; VLSI CSDG MOSFET; short channel effects; channel engineering; DG MOSFET; subthreshold swing; microelectronics; nanotechnology; VLSI
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Maduagwu, U.A.; Srivastava, V.M. Analytical Performance of the Threshold Voltage and Subthreshold Swing of CSDG MOSFET. J. Low Power Electron. Appl. 2019, 9, 10.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top