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Open AccessArticle

Novel Method for Electroless Etching of 6H–SiC

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Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Konkoly-Thege Miklós út 29-33, H-1121 Budapest, Hungary
2
Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary
*
Authors to whom correspondence should be addressed.
Nanomaterials 2020, 10(3), 538; https://doi.org/10.3390/nano10030538
Received: 6 January 2020 / Revised: 6 March 2020 / Accepted: 12 March 2020 / Published: 17 March 2020
In this article, we report an electroless method to fabricate porous hexagonal silicon carbide and hexagonal silicon carbide nanoparticles (NPs) as small as 1 nm using wet chemical stain etching. We observe quantum confinement effect for ultrasmall hexagonal SiC NPs in contrast to the cubic SiC NPs. We attribute this difference to the various surface terminations of the two polytypes of SiC NPs. View Full-Text
Keywords: chemical etching; silicon carbide; nanoparticles; X-ray photoemission spectroscopy; photoluminescence spectroscopy chemical etching; silicon carbide; nanoparticles; X-ray photoemission spectroscopy; photoluminescence spectroscopy
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Károlyházy, G.; Beke, D.; Zalka, D.; Lenk, S.; Krafcsik, O.; Kamarás, K.; Gali, Á. Novel Method for Electroless Etching of 6H–SiC. Nanomaterials 2020, 10, 538.

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