Second-Harmonic Generation in Mie-Resonant GaAs Nanowires
Department of Information Engineering, University of Padova, 35131 Padova, Italy
Department of Information Engineering, University of Brescia, 25123 Brescia, Italy
Charles M. Bowden Research Lab, US Army AMRDEC, Huntsville, AL 35898, USA
Author to whom correspondence should be addressed.
Appl. Sci. 2019, 9(16), 3381; https://doi.org/10.3390/app9163381 (registering DOI)
Received: 15 July 2019 / Revised: 8 August 2019 / Accepted: 14 August 2019 / Published: 16 August 2019
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We investigate the enhancement of second-harmonic generation in cylindrical GaAs nanowires. Although these nanostructures confine light in two dimensions, power conversion efficiencies on the order of
with a pump peak intensity of
are possible if the pump and the second-harmonic fields are coupled to the Mie-type resonances of the nanowire. We identify a large range of nanowire radii in which a double-resonance condition, i.e., both the pump and the second-harmonic fields excite normal modes of the nanowire, induces a high-quality-factor peak of conversion efficiency. We show that second-harmonic light can be scattered with large efficiency even if the second-harmonic photon energy is larger than 1.42 eV, i.e., the electronic bandgap of GaAs, above which the material is considered opaque. Finally, we evaluate the efficiency of one-photon absorption of second-harmonic light and find that resonant GaAs nanowires absorb second-harmonic light in the near-field region almost at the same rate at which they radiate second-harmonic light in the far-field region.
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de Ceglia, D.; Carletti, L.; Vincenti, M.A.; De Angelis, C.; Scalora, M. Second-Harmonic Generation in Mie-Resonant GaAs Nanowires. Appl. Sci. 2019, 9, 3381.
de Ceglia D, Carletti L, Vincenti MA, De Angelis C, Scalora M. Second-Harmonic Generation in Mie-Resonant GaAs Nanowires. Applied Sciences. 2019; 9(16):3381.
de Ceglia, Domenico; Carletti, Luca; Vincenti, Maria A.; De Angelis, Costantino; Scalora, Michael. 2019. "Second-Harmonic Generation in Mie-Resonant GaAs Nanowires." Appl. Sci. 9, no. 16: 3381.
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