Zhang, W.; Shang, J.; Li, S.; Liu, H.; Ma, M.; Ma, D.
Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer. Appl. Sci. 2025, 15, 2278.
https://doi.org/10.3390/app15052278
AMA Style
Zhang W, Shang J, Li S, Liu H, Ma M, Ma D.
Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer. Applied Sciences. 2025; 15(5):2278.
https://doi.org/10.3390/app15052278
Chicago/Turabian Style
Zhang, Wenting, Junliang Shang, Shuang Li, Hu Liu, Mengqi Ma, and Dongping Ma.
2025. "Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer" Applied Sciences 15, no. 5: 2278.
https://doi.org/10.3390/app15052278
APA Style
Zhang, W., Shang, J., Li, S., Liu, H., Ma, M., & Ma, D.
(2025). Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer. Applied Sciences, 15(5), 2278.
https://doi.org/10.3390/app15052278