Next Article in Journal
Evaluation of the Corrosion Resistance of Phosphate Coatings Deposited on the Surface of the Carbon Steel Used for Carabiners Manufacturing
Previous Article in Journal
Minimal Model for Sprag-Slip Oscillation as Catastrophe-Type Behavior
Open AccessArticle

Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory

1
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
2
Organic Optoelectronics Engineering Research Center of Fujian’s Universities, College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, China
3
College of Science, Shanghai Institute of Technology, Shanghai 201418, China
*
Authors to whom correspondence should be addressed.
Appl. Sci. 2020, 10(8), 2754; https://doi.org/10.3390/app10082754
Received: 28 February 2020 / Revised: 11 April 2020 / Accepted: 13 April 2020 / Published: 16 April 2020
(This article belongs to the Section Electrical, Electronics and Communications Engineering)
Molybdenum disulfide (MoS2) field-effect transistors (FETs) with four different metallic electrodes (Au,Ag,Al,Cu) of drain-source were fabricated by mechanical exfoliation and vacuum evaporation methods. The mobilities of the devices were (Au) 21.01, (Ag) 23.15, (Al) 5.35 and (Cu) 40.52 cm2/Vs, respectively. Unpredictably, the on-state currents of four devices were of the same order of magnitude with no obvious difference. For clarifying this phenomenon, we calculated the Schottky barrier height (SBH) of the four metal–semiconductor contacts by thermionic emission theory and confirmed the existence of Fermi-level pinning (FLP). We suppose the FLP may be caused by surface states of the semiconductor produced from crystal defects. View Full-Text
Keywords: fermi-level pinning; MoS2; field-effect transistors; thermionic emission theory fermi-level pinning; MoS2; field-effect transistors; thermionic emission theory
Show Figures

Figure 1

MDPI and ACS Style

Zhang, Y.; Chen, X.; Zhang, H.; Wei, X.; Guan, X.; Wu, Y.; Hu, S.; Zheng, J.; Wang, G.; Qiu, J.; Wang, J. Fermi-Level Pinning Mechanism in MoS2 Field-Effect Transistors Developed by Thermionic Emission Theory. Appl. Sci. 2020, 10, 2754.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop