Search Results (47)

Ohmic contact resistance is a persistent and increasingly dominant bottleneck limiting the practical performance of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) power semiconductor devices. This review provides a comprehensive and comparative treatment of specific contact resistivity (${\rho }_c$) phenomena across five material systems—4H-SiC, GaN, β-Ga₂O₃, AlN/AlGaN, and diamond—spanning fundamental contact physics, characterization methodology, material-specific state of the art, device context, and advanced engineering strategies. A semi-empirical scaling analysis establishes that the minimum achievable ${\rho }_c$ increases by approximately one order of magnitude per 0.8–1.0 eV increase in bandgap, arising from the interplay of Fermi-level pinning, increasing carrier effective mass, and decreasing achievable near-surface doping concentration. The best demonstrated ${\rho }_c$ values range from ~3 × 10⁻⁸ Ω·cm² for GaN epitaxially regrown contacts to ~8 × 10⁻⁵ Ω·cm² for direct AlN metallization. The transition from alloyed to regrown contacts in GaN—delivering two orders of magnitude improvement—is identified as the paradigm model for UWBG contact development, with β-Ga₂O₃ most immediately positioned to follow this trajectory. Key challenges include the absence of p-type doping in β-Ga₂O₃, near-complete Fermi-level pinning in AlN, and the unsolved shallow-donor problem in diamond. Recommendations for standardized ${\rho }_c$ measurement protocols and priority research directions are presented. Full article

Adjusting the Schottky barrier height is an important approach to enhancing the gas-sensing performance of TiO₂ Schottky sensors. In this study, micro TiO₂ nanotube Schottky sensors were fabricated via magnetron sputtering and anodic oxidation, with their Schottky barrier height adjusted by varying the annealing temperature. The morphology, phase composition, oxygen vacancy concentration, band structure, and Schottky junction of the samples were investigated using SEM, GIXRD, EPR, Hall effect measurements, XPS, I-V curves, and AC impedance. The sensor annealed at 500 °C demonstrated the highest gas-sensing response, outperforming sensors treated at other temperatures by over 100 times. Its response value to 1 ppm H₂ was 242. The annealing temperature significantly affects the TiO₂ phase and oxygen vacancy concentration, resulting in the highest Schottky barrier height in the 500 °C-annealed sensor, which contributes to its superior sensing performance. AC impedance measurements revealed no significant Fermi-level pinning in TiO₂. Based on the gas-sensing mechanism analysis, the response of the TiO₂ sensor can be divided into three regimes: Schottky junction control, TiO₂ resistance control, and co-control. Full article

To address the trade-off between thermoelectric efficiency in oxide thermoelectric materials used in Aiye Processing Equipment, this study investigates the effect of La doping on the thermoelectric properties of indium oxide (In₂O₃) through experimental characterization and mechanism analysis. The results show that La doping induces synergistic optimization of the electronic structure, lattice dynamics, and defect state of In₂O₃, leading to simultaneous enhancements in thermoelectric and mechanical properties. Specifically, La³⁺ substitution for In³⁺ significantly increases carrier concentration, which, combined with the band convergence-induced elevation of density of states (DOS) near the Fermi level, results in a remarkable improvement in power factor (from the intrinsic enhancement driven by electrical conductivity) while mitigating the reduction in Seebeck coefficient. Meanwhile, lattice distortion caused by ionic radius mismatch and decreased Young’s modulus (due to weakened In-O bonds) jointly enhance phonon scattering and reduce phonon propagation velocity, leading to a significant decrease in lattice thermal conductivity and total thermal conductivity. Consequently, the thermoelectric figure of merit (ZT) of La-doped In₂O₃ increases from 0.055 to 0.358, a six-fold enhancement. Additionally, La doping improves Vickers hardness through three synergistic mechanisms: internal stress from lattice distortion, enhanced interatomic bonding (synergistic reinforcement of ionic and covalent bond components), and dislocation pinning by substitutional defects (La_In). This study demonstrates that La doping achieves the dual regulation of “promoting electrical transport, suppressing thermal conduction, and enhancing mechanical strength” in In₂O₃, breaking the traditional trade-off between thermoelectric and mechanical properties. The findings provide a feasible strategy for the performance optimization of oxide thermoelectrics and lay a foundation for their practical applications in energy conversion systems requiring high efficiency and structural reliability. Full article

Poly (3,4-ethylenedioxythiophene polystyrene sulfonate) (PEDOT:PSS) is a solution-processable hole transport layer known for its high work function and excellent hole mobility. The incorporation of graphene serves as an effective strategy to augment the hole-transport properties of PEDOT:PSS. In this study, the electronic structure of graphene-doped PEDOT:PSS (G-PEDOT:PSS) was investigated using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). It was found that the work function of PEDOT:PSS increases with graphene doping concentration, rising from 4.86 eV for undoped PEDOT:PSS to 5.03 eV for PEDOT:PSS incorporating 10 wt% graphene. The impact of this modification on the energy-level alignment with zinc phthalocyanine (ZnPc), which is a prototypical p-type organic semiconductor, was examined through in situ XPS and UPS analyses. Despite the increased work function, the hole injection barriers for both PEDOT:PSS and G-PEDOT:PSS to ZnPc were determined to be identical at 0.26 eV. This lack of change in the barrier is explicitly attributed to Fermi-level pinning, where the integer charge transfer level of ZnPc is pinned to the Fermi level of the substrate, preventing a further reduction in the energy offset. That said, for other p-type organic semiconductors with higher ionization energies, the use of G-PEDOT:PSS could potentially enable more efficient hole injection. Full article

Wide-bandgap diamond photodetectors face a fundamental trade-off between dark current suppression and photocurrent collection due to high Schottky barriers. Here, a photo-modulation strategy is demonstrated by integrating monolayer graphene as transparent electrodes on oxygen-terminated single-crystal diamond. The atomically thin graphene (87.3% UV transmittance at 220 nm) allows photons to penetrate and dynamically reduce Schottky barriers through photoinduced electric fields, while maintaining high barriers (~2.3 eV) under dark conditions for ultralow leakage current. Compared with conventional 100 nm Au electrodes, graphene-based devices exhibit a 4.9-fold responsivity improvement (0.158 A/W at 220 nm) and a 5.2-fold detectivity increase (8.35 × 10¹³ cm·Hz^1/2/W), while preserving ultralow dark current (~10⁻¹² A at ±100 V). XPS measurements confirm a minimal Fermi level shift (0.06 eV) upon graphene integration, demonstrating robust surface state pinning by oxygen termination. Transient photoresponse reveals a 27% faster rise time (30 ns vs. 41 ns) with bi-exponential decay governed by band-to-band recombination (τ1 ≈ 75 ns) and trap-assisted recombination (τ2 ≈ 411 ns). The devices maintain stable performance after one month of ambient exposure and successfully demonstrate UV optical communication capability. This transparent electrode approach offers a versatile strategy for enhancing wide-bandgap semiconductor photodetectors for secure communications, environmental monitoring, and industrial sensing applications. Full article

Diamond, renowned for its exceptional electrical, physical, and chemical properties, including ultra-wide bandgap, superior hardness, high thermal conductivity, and unparalleled stability, serves as an ideal candidate for next-generation high-power and high-temperature electronic devices. Among diamond-based devices, Schottky barrier diodes (SBDs) have garnered significant attention due to their simple architecture and superior rectifying characteristics. This review systematically summarizes recent advances in diamond SBDs, focusing on both metal–semiconductor (MS) and metal–interlayer–semiconductor (MIS) configurations. For MS structures, we critically analyze the roles of single-layer metals (including noble metals, transition metals, and other metals) and multilayer metals in modulating Schottky barrier height (SBH) and enhancing thermal stability. However, the presence of interface-related issues such as high densities of surface states and Fermi level pinning often leads to poor control of the SBH, limiting device performance and reliability. To address these challenges and achieve high-quality metal/diamond interfaces, researchers have proposed various interface engineering strategies. In particular, the introduction of interfacial layers in MIS structures has emerged as a promising approach. For MIS architectures, functional interlayers—including high-k materials (Al₂O₃, HfO₂, SnO₂) and low-work-function materials (LaB₆, CeB₆)—are evaluated for their efficacy in interface passivation, barrier modulation, and electric field control. Terminal engineering strategies, such as field-plate designs and surface termination treatments, are also highlighted for their role in improving breakdown voltage. Furthermore, we emphasize the limitations in current parameter extraction from current–voltage (I–V) properties and call for a unified new method to accurately determine SBH. This comprehensive analysis provides critical insights into interface engineering strategies and evaluation protocols for high-performance diamond SBDs, paving the way for their reliable deployment in extreme conditions. Full article

Fermi-level pinning (FLP) at metal–semiconductor interfaces remains a key obstacle to achieving low-resistance contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC)-based heterostructures. Here, we present a first-principles study of Schottky barrier formation in WSe₂-MoSe₂ van der Waals heterostructures interfaced with four representative metals (Ag, Al, Au, and Pt). It was found that all metal–WSe₂/MoSe₂ direct contacts induce pronounced metal-induced gap states (MIGSs), leading to significant FLP inside the WSe₂/MoSe₂ band gaps and elevated Schottky barrier heights (SBHs) greater than 0.31 eV. By introducing a 2D metal-doped metallic (mWSe/mMoSe) layer between WSe₂/MoSe₂ and the metal electrodes, the MIGSs can be effectively suppressed, resulting in nearly negligible SBHs for both electrons and holes, with even an SBH of 0 eV observed in the Ag-AgMoSe-MoSe₂ contact, thereby enabling quasi-Ohmic contact behavior. Our results offer a universal and practical strategy to mitigate FLP and achieve high-performance TMDC-based electronic devices with ultralow contact resistance. Full article

Indium Arsenide is a III–V semiconductor with low electron effective mass, a small band gap, strong spin–orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on In_xAl_1−xAs metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, which allows for multiple device operations on the same wafer and thus making the approach scalable. The structural properties of the InAs layers were investigated by high-resolution X-ray diffraction, demonstrating the high crystal quality of the InAs layers. Furthermore, their transport properties, such as total and sheet carrier concentration, sheet resistance, and carrier mobility, were measured in the van der Pauw configuration at room temperature. A simple conduction model was employed to quantify the surface, bulk, and interface contributions to the overall carrier concentration and mobility. Full article

Nowadays, polycrystalline lead telluride is one of the premier substances for thermoelectric devices while remaining a hopeful competitor to current semiconductor materials used in mid-infrared photonic applications. Notwithstanding that, the development of reliable and reproducible routes for the synthesis of PbTe thin films has not yet been accomplished. As an effort toward this aim, the present article reports progress in the growth of polycrystalline indium-doped PbTe films and their study. The introduction foregoing the main text presents an overview of studies in these and closely related research fields for seven decades. The main text reports on the electron-beam-assisted physical vapor deposition of n-type indium-doped PbTe films on two different amorphous substrates. This doping of PbTe is unique since it sets electron density uniform over grains due to pinning the Fermi level. In-house optimized parameters of the deposition process are presented. The films are structurally characterized by a set of techniques. The transport properties of the films are measured with the original setups described in detail. The infrared transmission spectra are measured and simulated with the original optical-multilayer modeling tool described in the appendix. Conclusions of films’ quality in terms of these properties altogether are drawn. Full article

Cobalt ferrite (CoFe₂O₄) combined with multi-walled carbon nanotubes (MWCNTs) is an outstanding material regarding photoelectrochemical water oxidation (PEC-WO) because of its excellent catalytic properties and stability. On the other hand, surface imperfections in CoFe₂O₄ can cause band bending and surface Fermi level pinning, significantly reducing its PEC conversion efficiency. Heterostructure engineering is essential for achieving increased light-gathering capacity and charge separation efficiency for PEC-WO. In this study, a quaternary heterostructure of CoFe₂O₄/MWCNT-doped Metal–Organic Framework-100 (Iron), MIL-100(Fe)/Titanium Oxide (TiO₂) was synthesized by using a combination of hydrothermal, solvothermal, and “dip and dry” techniques. Characterization results confirmed the formation of a structural network of MIL-100(Fe) on TiO₂ surfaces, enhanced by the incorporation of MWCNTs during the hydrothermal reaction. Under 1 sun irradiation, the resultant quaternary heterostructure displayed a photocurrent density (J_ph) of 3.70 mA cm⁻² under free bias voltage, which is around 3.08 times more than that of pristine TiO₂ photoanodes (J_ph = 1.20 mA cm⁻²). This investigation highlights the advantages of the MIL-100(Fe) network in improving the solar PEC-WO performance of TiO₂ photoanodes. Full article

The chemical bath deposition (CBD) process enables the deposition of ZnO nanowires (NWs) on various substrates with customizable morphology. However, the hydrogen-rich CBD environment introduces numerous hydrogen-related defects, unintentionally doping the ZnO NWs and increasing their electrical conductivity. The oxygen-based plasma treatment can modify the nature and amount of these defects, potentially tailoring the ZnO NW properties for specific applications. This study examines the impact of the average ion energy on the formation of oxygen vacancies (V_O) and hydrogen-related defects in ZnO NWs exposed to low-pressure oxygen plasma. Using X-ray photoelectron spectroscopy (XPS), 5 K cathodoluminescence (5K CL), and Raman spectroscopy, a comprehensive understanding of the effect of the oxygen ion energy on the formation of defects and defect complexes was established. A series of associative and dissociative reactions indicated that controlling plasma process parameters, particularly ion energy, is crucial. The XPS data suggested that increasing the ion energy could enhance Fermi level pinning by increasing the amount of V_O and favoring the hydroxyl group adsorption, expanding the depletion region of charge carriers. The 5K CL and Raman spectroscopy further demonstrated the potential to adjust the ZnO NW physical properties by varying the oxygen ion energy, affecting various donor- and acceptor-type defect complexes. This study highlights the ability to tune the ZnO NW properties at low temperature by modifying plasma process parameters, offering new possibilities for a wide variety of nanoscale engineering devices fabricated on flexible and/or transparent substrates. Full article

The contact resistance formed between MoS₂ and metal electrodes plays a key role in MoS₂-based electronic devices. The Schottky barrier height (SBH) is a crucial parameter for determining the contact resistance. However, the SBH is difficult to modulate because of the strong Fermi-level pinning (FLP) at MoS₂-metal interfaces. Here, we investigate the FLP effect and the contact types of monolayer and multilayer MoS₂-metal van der Waals (vdW) interfaces using density functional theory (DFT) calculations based on Perdew–Burke–Ernzerhof (PBE) level. It has been demonstrated that, compared with monolayer MoS₂-metal close interfaces, the FLP effect can be significantly reduced in monolayer MoS₂-metal vdW interfaces. Furthermore, as the layer number of MoS₂ increases from 1L to 4L, the FLP effect is first weakened and then increased, which can be attributed to the charge redistribution at the MoS₂-metal and MoS₂-MoS₂ interfaces. In addition, the p-type Schottky contact can be achieved in 1L–4L MoS₂-Pt, 3L MoS₂-Au, and 2L–3L MoS₂-Pd vdW interfaces, which is useful for realizing complementary metal oxide semiconductor (CMOS) logic circuits. These findings indicated that the FLP and contact types can be effectively modulated at MoS₂-metal vdW interfaces by selecting the layer number of MoS₂. Full article

Tungsten oxide is one of the most commonly used materials for metal oxide-based gas sensors. In order to tune the sensing behavior, small clusters of noble metals are often added to the surface of WO₃. Previously, it has been found that in the case of oxidized metal clusters, e.g., Rh and Pt additives, the Fermi-level pinning mechanism dominates. Unlike other noble metal surface clusters, gold seems to remain metallic under sensor operation. As a result, the behavior of WO₃-based sensors was found to be significantly enhanced for all reducing gases and decreased for NO₂. Full article

The optimization of the new generation of piezoelectric nanogenerators based on 1D nanostructures requires a fundamental understanding of the different physical mechanisms at play, especially those that become predominant at the nanoscale regime. One such phenomenon is the surface charge effect (SCE), which is very pronounced in GaN NWs with sub-100 nm diameters. With an advanced nano-characterization tool derived from AFM, the influence of SCE on the piezo generation capacity of GaN NWs is investigated by modifying their immediate environment. As-grown GaN NWs are analysed and compared to their post-treated counterparts featuring an Al₂O₃ shell. We establish that the output voltages systematically decrease by the Al₂O₃ shell. This phenomenon is directly related to the decrease of the surface trap density in the presence of Al₂O₃ and the corresponding reduction of the surface Fermi level pinning. This leads to a stronger screening of the piezoelectric charges by the free carriers. These experimental results demonstrate and confirm that the piezo-conversion capacity of GaN NWs is favoured by the presence of the surface charges. Full article

Contact scaling is a major challenge in nano complementary metal–oxide–semiconductor (CMOS) technology, as the surface roughness, contact size, film thicknesses, and undoped substrate become more problematic as the technology shrinks to the nanometer range. These factors increase the contact resistance and the nonlinearity of the current–voltage characteristics, which could limit the benefits of the further downsizing of CMOS devices. This review discusses issues related to the contact size reduction of nano CMOS technology and the validity of the Schottky junction model at the nanoscale. The difficulties, such as the limited doping level and choices of metal for band alignment, Fermi-level pinning, and van der Waals gap, in achieving transparent ohmic contacts with emerging two-dimensional materials are also examined. Finally, various methods for improving ohmic contacts’ characteristics, such as two-dimensional/metal van der Waals contacts and hybrid contacts, junction doping technology, phase and bandgap modification effects, buffer layers, are highlighted. Full article