Article Versions Notes

Zhang Y, Chen X, Zhang H, Wei X, Guan X, Wu Y, Hu S, Zheng J, Wang G, Qiu J, et al. Fermi-Level Pinning Mechanism in MoS₂ Field-Effect Transistors Developed by Thermionic Emission Theory. Applied Sciences. 2020; 10(8):2754. https://doi.org/10.3390/app10082754

Zhang, Yu, Xiong Chen, Hao Zhang, Xicheng Wei, Xiangfeng Guan, Yonghua Wu, Shaozu Hu, Jiale Zheng, Guidong Wang, Jiawen Qiu, and et al. 2020. "Fermi-Level Pinning Mechanism in MoS₂ Field-Effect Transistors Developed by Thermionic Emission Theory" Applied Sciences 10, no. 8: 2754. https://doi.org/10.3390/app10082754

Zhang, Y., Chen, X., Zhang, H., Wei, X., Guan, X., Wu, Y., Hu, S., Zheng, J., Wang, G., Qiu, J., & Wang, J. (2020). Fermi-Level Pinning Mechanism in MoS₂ Field-Effect Transistors Developed by Thermionic Emission Theory. Applied Sciences, 10(8), 2754. https://doi.org/10.3390/app10082754