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FEM Simulation of THz Detector Based on Sb and Bi88Sb12 Thermoelectric Thin Films

1
Faculty of Cryogenic Engineering, ITMO University, 197101 Saint-Petersburg, Russia
2
International Scientific and Research Institute of Bioengineering, ITMO University, 197101 Saint-Petersburg, Russia
3
The Department of Physics, Saint Petersburg State University of Industrial Technologies and Design, 191186 Saint-Petersburg, Russia
4
Terahertz Biomedicine Laboratory, ITMO University, 197101 Saint-Petersburg, Russia
*
Author to whom correspondence should be addressed.
Appl. Sci. 2020, 10(6), 1929; https://doi.org/10.3390/app10061929
Received: 17 February 2020 / Revised: 6 March 2020 / Accepted: 6 March 2020 / Published: 11 March 2020
(This article belongs to the Special Issue Terahertz Sensing)
A terahertz (THz) detector based on thermoelectric thin films was simulated using the finite elements method. The thermoelectric circuit consisted of S b and B i 88 S b 12 150-nm films on the mica substrate. S b , B i 88 S b 12 , and mica-substrate properties have been measured experimentally in the THz frequency range. The model of electromagnetic heating was used in order to estimate possible heating of S b - B i 88 S b 12 contact. THz radiation power varied from 1 μ W to 50 mW, and frequency varied in the range from 0.3 to 0.5 THz. The calculations showed a temperature difference of up to 1 K, voltage up to 0.1 mV, and responsivity of several mVW 1 . The results show that thin S b and B i S b thermoelectric films can be used for THz radiation detection at room temperatures. View Full-Text
Keywords: thermoelectric; detector; terahertz; FEM; finite element simulation; bismuth; antimony thermoelectric; detector; terahertz; FEM; finite element simulation; bismuth; antimony
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MDPI and ACS Style

Tukmakova, A.S.; Asach, A.V.; Novotelnova, A.V.; Tkhorzhevskiy, I.L.; Kablukova, N.S.; Demchenko, P.S.; Zaitsev, A.D.; Khodzitsky, M.K. FEM Simulation of THz Detector Based on Sb and Bi88Sb12 Thermoelectric Thin Films. Appl. Sci. 2020, 10, 1929.

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