A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM)
Abstract
:Featured Application
Abstract
1. Introduction
2. Device Structure and Mechanism
3. Fabrication Procedure
4. Results and Discussion
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Parameter | Value |
---|---|
Trench depth (HT) | 7.5 μm |
Gate depth(HG) | 1.0 μm |
n+ source junction depth | 0.2 μm |
p- body junction depth | 0.8 μm |
p- body doping concentration | 1.5 × 1018 cm−3 |
Trench width (WT) | 3.6 μm |
Mesa Width (WM) | 3.2 μm |
Width of E1 (T1) | 1.6 μm |
Thickness of field oxide (t1) | 1.2 μm |
n-drift region doping concentration (ND) | 1 × 1015 cm−3 |
Doping of lower epitaxial layer (N2) | 5 × 1015 cm−3 |
Doping of middle epitaxial layer (N1) | 1.5 × 1016 cm−3 |
Doping of upper epitaxial layer (N2) | 5 × 1015 cm−3 |
Thickness of gate oxide | 50 nm |
Thickness of n- drift region (L) | 16 μm |
Thickness of lower epitaxial layer (L1) | 3.2 μm |
Thickness of middle epitaxial layer (L2) | 4 μm |
Thickness of upper epitaxial layer (L3) | 8.8 μm |
Height of source electrode of SGRSO (H) | 6.3 μm |
td(on) (ns) | td(off) (ns) | tr (ns) | tf (ns) | Eon (μJ) | Eoff (μJ) | |
---|---|---|---|---|---|---|
SGRSO | 0.59 | 7.57 | 0.57 | 5.59 | 0.081 | 0.92 |
HDSGRSO | 0.48 | 7.93 | 0.69 | 17.64 | 0.082 | 1.78 |
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Chen, R.; Wang, L.; Zhang, H.; Cui, M.; Guo, M. A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM). Appl. Sci. 2020, 10, 7895. https://doi.org/10.3390/app10217895
Chen R, Wang L, Zhang H, Cui M, Guo M. A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM). Applied Sciences. 2020; 10(21):7895. https://doi.org/10.3390/app10217895
Chicago/Turabian StyleChen, Runze, Lixin Wang, Hongkai Zhang, Mengyao Cui, and Min Guo. 2020. "A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM)" Applied Sciences 10, no. 21: 7895. https://doi.org/10.3390/app10217895
APA StyleChen, R., Wang, L., Zhang, H., Cui, M., & Guo, M. (2020). A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM). Applied Sciences, 10(21), 7895. https://doi.org/10.3390/app10217895