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Journal: Appl. Sci., 2020
Volume: 10
Number: 7895
Article:
A New Split Gate Resurf Stepped Oxide UMOSFET Structure with High Doped Epitaxial Layer for Improving Figure of Merit (FOM)
Authors:
by
Runze Chen, Lixin Wang, Hongkai Zhang, Mengyao Cui and Min Guo
Link:
https://www.mdpi.com/2076-3417/10/21/7895
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