Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Depth Profiling of EH1 and EH3 Deep Level Defects
3.2. Metastable Defects
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Deep Level | 7.5 MeV C (108 cm−2) | 2 MeV He (109 cm−2) | Epithermal and Fast Neutrons (1013 cm−2) | |||
---|---|---|---|---|---|---|
Ea (eV) | σ (cm2) | Ea (eV) | σ (cm2) | Ea (eV) | σ (cm2) | |
EH1 | 0.41 ± 0.02 | 3 × 10−15 | 0.42 ± 0.01 | 4 × 10−15 | 0.43 ± 0.01 | 1 × 10−14 |
Z1/2 | 0.65 ± 0.01 | 4 × 10−15 | 0.68 ± 0.01 | 1 × 10−14 | 0.65 ± 0.02 | 3 × 10−15 |
EH3 | 0.70 ± 0.04 | 1 × 10−15 | 0.71 ± 0.04 | 2 × 10−15 | 0.71 ± 0.03 | 1 × 10−15 |
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Brodar, T.; Bakrač, L.; Capan, I.; Ohshima, T.; Snoj, L.; Radulović, V.; Pastuović, Ž. Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals 2020, 10, 845. https://doi.org/10.3390/cryst10090845
Brodar T, Bakrač L, Capan I, Ohshima T, Snoj L, Radulović V, Pastuović Ž. Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals. 2020; 10(9):845. https://doi.org/10.3390/cryst10090845
Chicago/Turabian StyleBrodar, Tomislav, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, and Željko Pastuović. 2020. "Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation" Crystals 10, no. 9: 845. https://doi.org/10.3390/cryst10090845