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Article

Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

1
Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia
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Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
3
Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
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Australian Nuclear Science and Technology Organisation, 1New Illawarra Rd, Lucas Heights, NSW 2234, Australia
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(9), 845; https://doi.org/10.3390/cryst10090845
Received: 1 September 2020 / Revised: 13 September 2020 / Accepted: 19 September 2020 / Published: 22 September 2020
(This article belongs to the Special Issue Crystalline Materials for Radiation Detection: A New Perspectives)
Deep level defects created by implantation of light-helium and medium heavy carbon ions in the single ion regime and neutron irradiation in n-type 4H-SiC are characterized by the DLTS technique. Two deep levels with energies 0.4 eV (EH1) and 0.7 eV (EH3) below the conduction band minimum are created in either ion implanted and neutron irradiated material beside carbon vacancies (Z1/2). In our study, we analyze components of EH1 and EH3 deep levels based on their concentration depth profiles, in addition to (−3/=) and (=/−) transition levels of silicon vacancy. A higher EH3 deep level concentration compared to the EH1 deep level concentration and a slight shift of the EH3 concentration depth profile to larger depths indicate that an additional deep level contributes to the DLTS signal of the EH3 deep level, most probably the defect complex involving interstitials. We report on the introduction of metastable M-center by light/medium heavy ion implantation and neutron irradiation, previously reported in cases of proton and electron irradiation. Contribution of M-center to the EH1 concentration profile is presented.
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Keywords: silicon carbide; defects; ion implantation; DLTS; neutron radiation silicon carbide; defects; ion implantation; DLTS; neutron radiation
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MDPI and ACS Style

Brodar, T.; Bakrač, L.; Capan, I.; Ohshima, T.; Snoj, L.; Radulović, V.; Pastuović, Ž. Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals 2020, 10, 845. https://doi.org/10.3390/cryst10090845

AMA Style

Brodar T, Bakrač L, Capan I, Ohshima T, Snoj L, Radulović V, Pastuović Ž. Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals. 2020; 10(9):845. https://doi.org/10.3390/cryst10090845

Chicago/Turabian Style

Brodar, Tomislav, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, and Željko Pastuović. 2020. "Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation" Crystals 10, no. 9: 845. https://doi.org/10.3390/cryst10090845

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