Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation
- Supplementary File 1:
PDF-Document (PDF, 765 KiB)
Brodar, T.; Bakrač, L.; Capan, I.; Ohshima, T.; Snoj, L.; Radulović, V.; Pastuović, Ž. Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals 2020, 10, 845. https://doi.org/10.3390/cryst10090845
Brodar T, Bakrač L, Capan I, Ohshima T, Snoj L, Radulović V, Pastuović Ž. Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals. 2020; 10(9):845. https://doi.org/10.3390/cryst10090845
Chicago/Turabian StyleBrodar, Tomislav, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, and Željko Pastuović. 2020. "Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation" Crystals 10, no. 9: 845. https://doi.org/10.3390/cryst10090845