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Journal: Crystals, 2020
Volume: 10
Number: 845
Article:
Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation
Authors:
by
Tomislav Brodar, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović and Željko Pastuović
Link:
https://www.mdpi.com/2073-4352/10/9/845
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