Brodar, T.; Bakrač, L.; Capan, I.; Ohshima, T.; Snoj, L.; Radulović, V.; Pastuović, Ž.
Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals 2020, 10, 845.
https://doi.org/10.3390/cryst10090845
AMA Style
Brodar T, Bakrač L, Capan I, Ohshima T, Snoj L, Radulović V, Pastuović Ž.
Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals. 2020; 10(9):845.
https://doi.org/10.3390/cryst10090845
Chicago/Turabian Style
Brodar, Tomislav, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, and Željko Pastuović.
2020. "Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation" Crystals 10, no. 9: 845.
https://doi.org/10.3390/cryst10090845
APA Style
Brodar, T., Bakrač, L., Capan, I., Ohshima, T., Snoj, L., Radulović, V., & Pastuović, Ž.
(2020). Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals, 10(9), 845.
https://doi.org/10.3390/cryst10090845