- Article
Growth of Lu2O3 and HfO2 Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma
- Kyoung Jin Kim,
- Kei Kamada,
- Rikito Murakami,
- Takahiko Horiai,
- Shiori Ishikawa,
- Vladimir V. Kochurikhin,
- Masao Yoshino,
- Akihiro Yamaji,
- Yasuhiro Shoji and
- Shunsuke Kurosawa
- + 5 authors
A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu2O3, Lu0.388Hf0.612O1.806, and Lu0.18Hf0.82O1.91, with melting points of 2460, 2900...

