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Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz, 4040 Linz, Austria
Crystals 2020, 10(1), 5; https://doi.org/10.3390/cryst10010005
Received: 31 October 2019 / Revised: 12 December 2019 / Accepted: 13 December 2019 / Published: 19 December 2019
(This article belongs to the Special Issue Dislocations in Heterostructures)
Dislocations play a crucial role in self-organization and strain relaxation mechanisms in SiGe heterostructures. In most cases, they should be avoided, and different strategies exist to exploit their nucleation properties in order to manipulate their position. In either case, detailed knowledge about their exact Burgers vectors and possible dislocation reactions are necessary to optimize the fabrication processes and the properties of SiGe materials. In this review a brief overview of the dislocation mechanisms in the SiGe system is given. The method of choice for dislocation characterization is transmission electron microscopy. In particular, the article provides a detailed introduction into large-angle convergent-beam electron diffraction, and gives an overview of different application examples of this method on SiGe structures and related systems. View Full-Text
Keywords: TEM; dislocations; SiGe; CBED; LACBED TEM; dislocations; SiGe; CBED; LACBED
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Groiss, H. Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction. Crystals 2020, 10, 5.

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