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Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method

1
Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China
2
Central Semiconductor Manufacturing Corporation, Wuxi 214061, China
*
Author to whom correspondence should be addressed.
Micromachines 2018, 9(2), 74; https://doi.org/10.3390/mi9020074
Received: 27 December 2017 / Revised: 31 January 2018 / Accepted: 7 February 2018 / Published: 9 February 2018
A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed based on the narrow band level set method for surface evolution and Monte Carlo method for flux distribution. The advanced level set method is implemented to simulate the time-related movements of etched surface. In the meanwhile, accelerated by ray tracing algorithm, the Monte Carlo method incorporates all dominant physical and chemical mechanisms such as ion-enhanced etching, ballistic transport, ion scattering, and sidewall passivation. The modified models of charged particles and neutral particles are epitomized to determine the contributions of etching rate. The effects such as scalloping effect and lag effect are investigated in simulations and experiments. Besides, the quantitative analyses are conducted to measure the simulation error. Finally, this simulator will be served as an accurate prediction tool for some MEMS fabrications. View Full-Text
Keywords: deep reactive ion etching; level set method; Monte Carlo simulation; ray tracing algorithm; surface evolution deep reactive ion etching; level set method; Monte Carlo simulation; ray tracing algorithm; surface evolution
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MDPI and ACS Style

Yu, J.-C.; Zhou, Z.-F.; Su, J.-L.; Xia, C.-F.; Zhang, X.-W.; Wu, Z.-Z.; Huang, Q.-A. Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method. Micromachines 2018, 9, 74.

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