Next Article in Journal
Research on the Relationship between Cutting Force and Machined Surface Quality in Micro Ball End-Milling of Potassium Dihydrogen Phosphate Crystal
Next Article in Special Issue
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications
Previous Article in Journal
Fabrication, Experiments, and Analysis of an LBM Additive-Manufactured Flexure Parallel Mechanism
Previous Article in Special Issue
Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs
Article Menu

Export Article

Open AccessArticle
Micromachines 2018, 9(11), 573; https://doi.org/10.3390/mi9110573

An Improved UU-MESFET with High Power Added Efficiency

Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
*
Author to whom correspondence should be addressed.
Received: 25 September 2018 / Revised: 24 October 2018 / Accepted: 30 October 2018 / Published: 5 November 2018
(This article belongs to the Special Issue Wide Bandgap Semiconductor Based Micro/Nano Devices)
Full-Text   |   PDF [964 KB, uploaded 5 November 2018]   |  

Abstract

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%. View Full-Text
Keywords: 4H-SiC; MESFET; ultrahigh upper gate height; power added efficiency 4H-SiC; MESFET; ultrahigh upper gate height; power added efficiency
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Jia, H.; Hu, M.; Zhu, S. An Improved UU-MESFET with High Power Added Efficiency. Micromachines 2018, 9, 573.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top