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Search Results (7)

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Keywords = MESFET

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10 pages, 4550 KB  
Article
The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal–Semiconductor Field-Effect Transistors
by Han-Sol Ro, Sung Ho Kang and Sungyeop Jung
Materials 2022, 15(3), 913; https://doi.org/10.3390/ma15030913 - 25 Jan 2022
Cited by 7 | Viewed by 4293
Abstract
We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga2O3 metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of [...] Read more.
We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-Ga2O3 metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of the behavior of such devices. The gate work function significantly affects the reverse bias drain current under the gate-current dominant regime, whereas a gate-source/drain gap larger than 0.1 µm has a negligible effect on the drain current. Full article
(This article belongs to the Special Issue Advanced Field Effect Transistors: Design, Fabrication and Applications)
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9 pages, 3093 KB  
Article
A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
by Hujun Jia, Mengyu Dong, Xiaowei Wang, Shunwei Zhu and Yintang Yang
Micromachines 2021, 12(5), 488; https://doi.org/10.3390/mi12050488 - 26 Apr 2021
Cited by 7 | Viewed by 2209
Abstract
A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, [...] Read more.
A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure. Full article
(This article belongs to the Special Issue SiC Based Miniaturized Devices, Volume II)
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15 pages, 3094 KB  
Article
A Time Delay Neural Network Based Technique for Nonlinear Microwave Device Modeling
by Wenyuan Liu, Lin Zhu, Feng Feng, Wei Zhang, Qi-Jun Zhang, Qian Lin and Gaohua Liu
Micromachines 2020, 11(9), 831; https://doi.org/10.3390/mi11090831 - 31 Aug 2020
Cited by 27 | Viewed by 3019
Abstract
This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed technique can accurately model the nonlinear microwave devices when compared to static neural network modeling method. A new formulation is developed to allow [...] Read more.
This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed technique can accurately model the nonlinear microwave devices when compared to static neural network modeling method. A new formulation is developed to allow for the proposed TDNN model to be trained with DC, small-signal, and large signal data, which can enhance the generalization of the device model. An algorithm is formulated to train the proposed TDNN model efficiently. This proposed technique is verified by GaAs metal-semiconductor-field-effect transistor (MESFET), and GaAs high-electron mobility transistor (HEMT) examples. These two examples demonstrate that the proposed TDNN is an efficient and valid approach for modeling various types of nonlinear microwave devices. Full article
(This article belongs to the Section A：Physics)
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8 pages, 1447 KB  
Article
Improved DRUS 4H-SiC MESFET with High Power Added Efficiency
by Hujun Jia, Yuan Liang, Tao Li, Yibo Tong, Shunwei Zhu, Xingyu Wang, Tonghui Zeng and Yintang Yang
Micromachines 2020, 11(1), 35; https://doi.org/10.3390/mi11010035 - 27 Dec 2019
Cited by 5 | Viewed by 2966
Abstract
A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing [...] Read more.
A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has decreased, the decrease is within an acceptable range. Meanwhile, the LDUS-MESFET has a smaller gate-source capacitance and a large transconductance. Therefore, the LDUS-MESFET can better balance DC and AC characteristics and improve power added efficiency (PAE). Full article
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
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6 pages, 1050 KB  
Article
An Improved 4H-SiC MESFET with a Partially Low Doped Channel
by Hujun Jia, Yibo Tong, Tao Li, Shunwei Zhu, Yuan Liang, Xingyu Wang, Tonghui Zeng and Yintang Yang
Micromachines 2019, 10(9), 555; https://doi.org/10.3390/mi10090555 - 23 Aug 2019
Cited by 8 | Viewed by 3361
Abstract
An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has [...] Read more.
An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (Vt), gate-source capacitance (Cgs) and saturation current (Id). The simulated results show that with the increase of H, the PAE of the device increases and then decreases when the value of NPLDC is low enough. The doping concentration and thickness of the PLDC are respectively optimized to be NPLDC = 1 × 1015 cm−3 and H = 0.15 μm to obtain the best PAE. The maximum PAE obtained from the PLDC-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%. Full article
(This article belongs to the Special Issue SiC based Miniaturized Devices)
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7 pages, 1363 KB  
Article
Improved MRD 4H-SiC MESFET with High Power Added Efficiency
by Shunwei Zhu, Hujun Jia, Xingyu Wang, Yuan Liang, Yibo Tong, Tao Li and Yintang Yang
Micromachines 2019, 10(7), 479; https://doi.org/10.3390/mi10070479 - 17 Jul 2019
Cited by 16 | Viewed by 4132
Abstract
An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based [...] Read more.
An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device is balanced, and the IMRD MESFET with a best power-added efficiency (PAE) is finally obtained. The results show that the PAE of the IMRD MESFET is 68.33%, which is 28.66% higher than the MRD MESFET, and DC and RF performance have not dropped significantly. Compared with the MRD MESFET, the IMRD MESFET has a broader prospect in the field of microwave radio frequency. Full article
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
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5 pages, 964 KB  
Article
An Improved UU-MESFET with High Power Added Efficiency
by Hujun Jia, Mei Hu and Shunwei Zhu
Micromachines 2018, 9(11), 573; https://doi.org/10.3390/mi9110573 - 5 Nov 2018
Cited by 10 | Viewed by 3271
Abstract
An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and [...] Read more.
An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor Based Micro/Nano Devices)
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