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Micromachines 2017, 8(10), 300; https://doi.org/10.3390/mi8100300

Laser-Induced-Plasma-Assisted Ablation and Metallization on C-Plane Single Crystal Sapphire (c-Al2O3)

1
College of Mechanical Engineering and Automation, Huaqiao University, Xiamen 361021, China
2
Department of Electronic Science, Xiamen University, Xiamen 361005, China
3
Fujian Key Laboratory of Special Energy Manufacturing, Huaqiao University, Xiamen 361021, China
4
School of Aerospace Engineering, Xiamen University, Xiamen 361005, China
*
Authors to whom correspondence should be addressed.
Received: 20 August 2017 / Revised: 12 September 2017 / Accepted: 28 September 2017 / Published: 7 October 2017
(This article belongs to the Special Issue Plasma-Based Surface Engineering)
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Abstract

Laser-induced-plasma-assisted ablation (LIPAA) is a promising micro-machining method that can fabricate microstructure on hard and transparent double-polished single crystal sapphire (SCS). While ablating, a nanosecond pulse 1064 nm wavelength laser beam travels through the SCS substrate and bombards the copper target lined up behind the substrate, which excites the ablating plasma. When laser fluence rises and is above the machining threshold of copper but below that of SCS, the kinetic energy of the copper plasma generated from the bombardment is mainly determined by the laser fluence, the repetition rate, and the substrate-to-target distance. With a lower repetition rate, SCS becomes metallized and gains conductivity. When micro-machining SCS with a pulsed laser are controlled by properly controlling laser machining parameters, such as laser fluence, repetition rate, and substrate-to-target distance, LIPAA can ablate certain line widths and depths of the microstructure as well as the resistance of SCS. On the contrary, conductivity resistance of metalized sapphire depends on laser parameters and distance in addition to lower repetition rate. View Full-Text
Keywords: single crystal sapphire; laser-induced-plasma-assisted ablation; repetition rate; metallization; micro-machines single crystal sapphire; laser-induced-plasma-assisted ablation; repetition rate; metallization; micro-machines
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Lu, X.; Jiang, F.; Lei, T.; Zhou, R.; Zhang, C.; Zheng, G.; Wen, Q.; Chen, Z. Laser-Induced-Plasma-Assisted Ablation and Metallization on C-Plane Single Crystal Sapphire (c-Al2O3). Micromachines 2017, 8, 300.

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