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Article

Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates

1
Department of Industrial Engineering, University of Padova, via Gradenigo 6/a, 35131 Padova, Italy
2
Department of Industrial Engineering, University of Padova, via F. Marzolo 9, 35131 Padova, Italy
3
Institute for Photonics and Nanotechnologies (CNR-IFN), National Research Council of Italy, via Trasea 7, 35131 Padova, Italy
4
Institute for Electronics, Information Engineering and Telecommunications (CNR-IEIIT), National Research Council of Italy, via Gradenigo 6/b, 35131 Padova, Italy
*
Author to whom correspondence should be addressed.
Academic Editor: Dong-Joo Kim
Materials 2022, 15(6), 2090; https://doi.org/10.3390/ma15062090
Received: 15 February 2022 / Revised: 5 March 2022 / Accepted: 10 March 2022 / Published: 11 March 2022
The realization of a c-axis oriented aluminum nitride thick film on aluminum substrates is a promising step in the development of transducers for applications with a working temperature up to about 600 °C. The present paper deals with the realization of AlN thick films by means of reactive magnetron sputtering with a pulsed DC power supply, operating in continuous mode for 50 h. Two values (0.4 and 0.8) of nitrogen concentration were used; operative pressure and power were set at 0.3 Pa and 150 W, respectively. The thickness of the obtained aluminum nitride films on the aluminum substrate, assessed with a profilometer, varied from 20 to 30 µm. The preferential orientation of AlN crystals was verified by X-ray diffraction. Finally, as the main focus of the investigation, the films underwent electrical characterization by means of an LCR-meter used on a parallel plate capacitor set-up and a test system based on a cantilever beam configuration. AlN conductivity and ε33 permittivity were derived in the 100 Hz–300 kHz frequency range. Magnetron sputtering operation with nitrogen concentration equal to 0.4 resulted in the preferred operative condition, leading to a d31 piezoelectric coefficient, in magnitude, of 0.52 × 10−12 C/N. View Full-Text
Keywords: AC conductivity; ε33 permittivity; aluminum nitride; d31 piezoelectric coefficient; magnetron sputtering; thick film AC conductivity; ε33 permittivity; aluminum nitride; d31 piezoelectric coefficient; magnetron sputtering; thick film
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MDPI and ACS Style

Desideri, D.; Bernardo, E.; Corso, A.J.; Moro, F.; Pelizzo, M.G. Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates. Materials 2022, 15, 2090. https://doi.org/10.3390/ma15062090

AMA Style

Desideri D, Bernardo E, Corso AJ, Moro F, Pelizzo MG. Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates. Materials. 2022; 15(6):2090. https://doi.org/10.3390/ma15062090

Chicago/Turabian Style

Desideri, Daniele, Enrico Bernardo, Alain Jody Corso, Federico Moro, and Maria Guglielmina Pelizzo. 2022. "Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates" Materials 15, no. 6: 2090. https://doi.org/10.3390/ma15062090

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