Tajalli, A.; Meneghini, M.; Besendörfer, S.; Kabouche, R.; Abid, I.; Püsche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Meissner, E.;
et al. High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials 2020, 13, 4271.
https://doi.org/10.3390/ma13194271
AMA Style
Tajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E,
et al. High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials. 2020; 13(19):4271.
https://doi.org/10.3390/ma13194271
Chicago/Turabian Style
Tajalli, Alaleh, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner,
and et al. 2020. "High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications" Materials 13, no. 19: 4271.
https://doi.org/10.3390/ma13194271
APA Style
Tajalli, A., Meneghini, M., Besendörfer, S., Kabouche, R., Abid, I., Püsche, R., Derluyn, J., Degroote, S., Germain, M., Meissner, E., Zanoni, E., Medjdoub, F., & Meneghesso, G.
(2020). High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials, 13(19), 4271.
https://doi.org/10.3390/ma13194271
