Order Article Reprints

Tajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E, et al. High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials. 2020; 13(19):4271. https://doi.org/10.3390/ma13194271

Tajalli, Alaleh, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, and et al. 2020. "High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications" Materials 13, no. 19: 4271. https://doi.org/10.3390/ma13194271

Tajalli, A., Meneghini, M., Besendörfer, S., Kabouche, R., Abid, I., Püsche, R., Derluyn, J., Degroote, S., Germain, M., Meissner, E., Zanoni, E., Medjdoub, F., & Meneghesso, G. (2020). High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials, 13(19), 4271. https://doi.org/10.3390/ma13194271