Morphologies, Young’s Modulus and Resistivity of High Aspect Ratio Tungsten Nanowires

Gao, Jianjun; Luo, Jian; Geng, Haibin; Cui, Kai; Zhao, Zhilong; Liu, Lin

doi:10.3390/ma13173749

Open AccessArticle

Morphologies, Young’s Modulus and Resistivity of High Aspect Ratio Tungsten Nanowires

by

Jianjun Gao

¹,

Jian Luo

^1,*

,

Haibin Geng

¹

,

Kai Cui

²,

Zhilong Zhao

² and

Lin Liu

³

¹

School of Mechanical Engineering and Automation, Fuzhou University, Fu Zhou 350108, China

²

School of Mechanical Engineering, Northwestern Polytechnical University, Xi’an 710072, China

³

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China

^*

Author to whom correspondence should be addressed.

Materials 2020, 13(17), 3749; https://doi.org/10.3390/ma13173749

Submission received: 18 July 2020 / Revised: 15 August 2020 / Accepted: 17 August 2020 / Published: 25 August 2020

(This article belongs to the Special Issue Manufacturing and Mechanics of Materials)

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Abstract

High aspect ratio tungsten nanowires have been prepared by selective dissolution of Nickel-aluminum-tungsten (NiAl−W) alloys which were directionally solidified at growth rates varying from 2 to 25 μm/s with a temperature gradient of 300 K·cm⁻¹. Young’s modulus and electrical resistivity of tungsten nanowires were measured by metallic mask template method. The results show that the tungsten nanowires with uniform diameter and high aspect ratio are well aligned. The length of tungsten nanowires increases with prolongation of etching time, and their length reaches 300 μm at 14 h. Young’s modulus of tungsten nanowires is estimated by Hertz and Sneddon models. The Sneddon model is proper for estimating the Young’s modulus, and the value of calculating Young’s modulus are 260–460 GPa which approach the value of bulk tungsten. The resistivity of tungsten nanowires is measured and fitted with Fuchs−Sondheimer (FS) + Mayadas−Shatzkes (MS) model. The fitting results show that the specific resistivity of W nanowires is a litter bigger than the bulk W, and its value decreases with decreasing diameter.

Keywords: tungsten nanowires; young’s modulus; resistivity; selective etching

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MDPI and ACS Style

Gao, J.; Luo, J.; Geng, H.; Cui, K.; Zhao, Z.; Liu, L. Morphologies, Young’s Modulus and Resistivity of High Aspect Ratio Tungsten Nanowires. Materials 2020, 13, 3749. https://doi.org/10.3390/ma13173749

AMA Style

Gao J, Luo J, Geng H, Cui K, Zhao Z, Liu L. Morphologies, Young’s Modulus and Resistivity of High Aspect Ratio Tungsten Nanowires. Materials. 2020; 13(17):3749. https://doi.org/10.3390/ma13173749

Chicago/Turabian Style

Gao, Jianjun, Jian Luo, Haibin Geng, Kai Cui, Zhilong Zhao, and Lin Liu. 2020. "Morphologies, Young’s Modulus and Resistivity of High Aspect Ratio Tungsten Nanowires" Materials 13, no. 17: 3749. https://doi.org/10.3390/ma13173749

APA Style

Gao, J., Luo, J., Geng, H., Cui, K., Zhao, Z., & Liu, L. (2020). Morphologies, Young’s Modulus and Resistivity of High Aspect Ratio Tungsten Nanowires. Materials, 13(17), 3749. https://doi.org/10.3390/ma13173749

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Morphologies, Young’s Modulus and Resistivity of High Aspect Ratio Tungsten Nanowires

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