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Open AccessArticle

The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering

1
The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China
2
Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, School of Space Science and Physics, Shandong University, Weihai 264209, China
3
Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, Taipei 243, Taiwan
4
College of Engineering, Chang Gung University, Taoyuan 333, Taiwan
5
Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
6
School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
*
Author to whom correspondence should be addressed.
Materials 2020, 13(10), 2376; https://doi.org/10.3390/ma13102376
Received: 19 April 2020 / Revised: 7 May 2020 / Accepted: 18 May 2020 / Published: 21 May 2020
CuCrO2 is one of the most promising p-type transparent conductive oxide (TCO) materials. Its electrical properties can be considerably improved by Mg doping. In this work, Cr-deficient CuCrO2 thin films were deposited by reactive magnetron sputtering based on 5 at.% Mg doping. The influence of Cr deficiency on the film’s optoelectronic properties was investigated. As the film’s composition varied, CuO impurity phases appeared in the film. The mixed valency of Cu+/Cu2+ led to an enhancement of the hybridization between the Cu3d and O2p orbitals, which further reduced the localization of the holes by oxygen. As a result, the carrier concentration significantly improved. However, since the impurity phase of CuO introduced more grain boundaries in Cu[Cr0.95−xMg0.05]O2, impeding the transport of the carrier and incident light in the film, the carrier mobility and the film’s transmittance reduced accordingly. In this work, the optimal optoelectronic performance is realized where the film’s composition is Cu[Cr0.78Mg0.05]O2. Its Haacke’s figure of merit is about 1.23 × 10−7 Ω−1. View Full-Text
Keywords: p-type conductivity; Cr-deficient CuCrO2; reactive magnetron sputtering; optoelectronic property p-type conductivity; Cr-deficient CuCrO2; reactive magnetron sputtering; optoelectronic property
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MDPI and ACS Style

Lin, S.-S.; Shi, Q.; Dai, M.-J.; Wang, K.-L.; Chen, S.-C.; Kuo, T.-Y.; Liu, D.-G.; Song, S.-M.; Sun, H. The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering. Materials 2020, 13, 2376.

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