Lin, S.-S.; Shi, Q.; Dai, M.-J.; Wang, K.-L.; Chen, S.-C.; Kuo, T.-Y.; Liu, D.-G.; Song, S.-M.; Sun, H.
The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering. Materials 2020, 13, 2376.
https://doi.org/10.3390/ma13102376
AMA Style
Lin S-S, Shi Q, Dai M-J, Wang K-L, Chen S-C, Kuo T-Y, Liu D-G, Song S-M, Sun H.
The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering. Materials. 2020; 13(10):2376.
https://doi.org/10.3390/ma13102376
Chicago/Turabian Style
Lin, Song-Sheng, Qian Shi, Ming-Jiang Dai, Kun-Lun Wang, Sheng-Chi Chen, Tsung-Yen Kuo, Dian-Guang Liu, Shu-Mei Song, and Hui Sun.
2020. "The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering" Materials 13, no. 10: 2376.
https://doi.org/10.3390/ma13102376
APA Style
Lin, S.-S., Shi, Q., Dai, M.-J., Wang, K.-L., Chen, S.-C., Kuo, T.-Y., Liu, D.-G., Song, S.-M., & Sun, H.
(2020). The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering. Materials, 13(10), 2376.
https://doi.org/10.3390/ma13102376
