Search Results (55)

High-resolution 3D visualization of dynamic environments is critical for applications such as remote sensing. Traditional 3D imaging systems, such as lidar, rely on avalanche photodiode (APD) arrays to determine the flight time of light for each scene pixel. In this context, we introduce and demonstrate a high-resolution 3D imaging approach leveraging an Electron Multiplying Charge Coupled Device (EMCCD). This sensor’s low bandwidth properties allow for the use of electro-optic modulators to achieve both temporal resolution and rapid shuttering at sub-nanosecond speeds. This enables range-gated 3D imaging, which significantly enhances the signal-to-noise ratio (SNR) within our proposed framework. By employing a dual EMCCD setup, it is possible to reconstruct both a depth image and a grayscale image from a single raw data frame, thereby improving dynamic imaging capabilities, irrespective of object or platform movement. Additionally, the adaptive gate-opening range technology can further refine the range resolution of specific scene objects to as low as 10 cm. Full article

This paper addresses the complex behavior of Single-Electron Bipolar Avalanche Transistors (SEBATs) through a comprehensive modeling approach. TCAD simulations were used to analyze the behavior of the device during avalanche pulses triggered by electron injection. The simulations consider the avalanche process and charge flow and include the parasitic capacitances and resistances. A SPICE model is proposed using parameters extracted from the TCAD simulations. Both TCAD and SPICE simulations are validated against experimental results obtained on 150 nm CMOS devices and are employed to provide a clear understanding of the phenomena observed experimentally during SEBAT operation. The impact of parasitic elements on device operation is studied using simulations. This work enables the optimization of SEBAT devices and their integration in circuits for better signal-to-noise ratios, efficiency, and potential applications in sensing and digitizing low-level signals. Full article

Timing measurements are critical for the detectors at the future HL-LHC, to resolve reconstruction ambiguity when the number of simultaneous interactions reaches up to 200 per bunch crossing. The ATLAS collaboration therefore builds a new High-Granularity Timing detector for the forward region. A customized ASIC, called ALTIROC, has been developed, to read out fast signals from low-gain avalanche detectors (LGADs), which has 50 ps time-resolution for signals from minimum-ionizing particles. To meet these requirements, a custom-designed pre-amplifier, a discriminator, and TDC circuits with minimal jitter have been implemented in a series of prototype ASICs. The latest version, ALTIROC3, is designed to contain full functionality. Hybrid assemblies with ALTIROC3 ASICs and LGAD sensors have been characterized with charged-particle beams at CERN-SPS and with laser-light injection. The time-jitter contributions of the sensor, pre-amplifier, discriminator, TDC, and digital readout are evaluated. Full article

This paper presents a theoretical analysis of npBp infrared (IR) barrier avalanche photodiode (APD) performance operating at 300 K based on a quaternary compound made of A^IIIB^V—InGaAsSb, lattice-matched to the GaSb substrate with a p-type barrier made of a ternary compound AlGaSb. Impact ionization in the multiplication layer of InGaAsSb separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) was studied using the Crosslight Software simulation package APSYS. The band structure of the avalanche detector and the electric field distribution for the multiplication and absorption layers were determined. The influence of the multiplication and charge layer parameters on the impact multiplication gain and the excess noise factor was analyzed. It has been shown that with the decrease in the charge layer doping level, the gain and the breakdown voltage increase, but the punch-through voltage decreases, and the linear range of the APD operating voltages widens. The multiplication layer doping level slightly affects the detector parameters, while increasing its width, the photocurrent and the breakdown voltage also increase. The detector structure proposed in this work allows us to obtain a comparable gain and lower dark currents to the APD detectors made of InGaAsSb previously presented in the literature. The performed simulations confirmed the possibility of obtaining APDs with high performance at room temperatures made of InGaAsSb for the SWIR range. Full article

This study explores the impact of a dual-charge layer structure on the performance of InGaAs/InAlAs avalanche photodiodes (APDs) with a separate absorption, charge, multiplication, charge, and transit (SACMCT) structure. The dual-charge layer, consisting of p-doped and n-doped charge layers on either side of the avalanche layer, is designed to precisely control the internal electric field, effectively reduce the dark current, and extend the dynamic range. Simulation results guided the fabrication of a backside-illuminated APD, which achieved a linear operating range of 10–30 V and a dark current as low as 80 nA. The optimized design significantly reduced the dark current and increased the breakdown voltage compared to previously reported APDs. These improvements demonstrate the potential of dual-charge-layer APDs for high-speed optical communications and precision photodetection applications. Full article

Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes. However, for simulations to be trusted, experimental validation is essential to confirm the accuracy of the conclusions drawn. In the framework of semiconductor detector characterisation, one powerful tool for such validation is the Two Photon Absorption-Transient Current Technique (TPA-TCT), which allows for highly precise, three-dimensional spatially-resolved characterisation of semiconductor detectors. In this work, the TCAD framework Synopsys Sentaurus is used to simulate depth-resolved TPA-TCT data for both p-type pad detectors (PINs) and Low Gain Avalanche Detectors (LGADs). The simulated data are compared against experimentally measured TPA-TCT results. Through this comparison, it is demonstrated that TCAD simulations can reproduce the TPA-TCT measurements, providing valuable insights into the TPA-TCT itself. Another significant outcome of this study is the successful simulation of the gain reduction mechanism, which can be observed in LGADs with increasing densities of excess charge carriers. This effect is demonstrated in an p-type LGAD with a thickness of approximately 286 µm. The results confirm the ability of TCAD to model the complex interaction between carrier dynamics and device gain. Full article

This paper presents an 8 × 8 channel optoelectronic readout array (ORA) realized in the TSMC 180 nm 1P6M RF CMOS process for the applications of short-range light detection and ranging (LiDAR) sensors. We propose several circuit techniques in this work, including an amplitude-to-voltage (A2V) converter that reduces the notorious walk errors by intensity compensation and a time-to-voltage (T2V) converter that acquires the linear slope of the output signals by exploiting a charging circuit, thus extending the input dynamic range significantly from 5 μA_pp to 1.1 mA_pp, i.e., 46.8 dB. These results correspond to the maximum detection range of 8.2 m via the action of the A2V converter and the minimum detection range of 56 cm with the aid of the proposed T2V converter. Optical measurements utilizing an 850 nm laser diode confirm that the proposed 8 × 8 ORA with 64 on-chip avalanche photodiodes (APDs) can successfully recover the narrow 5 ns light pulses even at the shortest distance of 56 cm. Hence, this work provides a potential CMOS solution for low-cost, low-power, short-range LiDAR sensors. Full article

Optical biosensors have emerged as a powerful tool in analytical biochemistry, offering high sensitivity and specificity in the detection of various biomolecules. This article explores the advancements in the integration of optical biosensors with microfluidic technologies, creating lab-on-a-chip (LOC) platforms that enable rapid, efficient, and miniaturized analysis at the point of need. These LOC platforms leverage optical phenomena such as chemiluminescence and electrochemiluminescence to achieve real-time detection and quantification of analytes, making them ideal for applications in medical diagnostics, environmental monitoring, and food safety. Various optical detectors used for detecting chemiluminescence are reviewed, including single-point detectors such as photomultiplier tubes (PMT) and avalanche photodiodes (APD), and pixelated detectors such as charge-coupled devices (CCD) and complementary metal–oxide–semiconductor (CMOS) sensors. A significant advancement discussed in this review is the integration of optical biosensors with pixelated image sensors, particularly CMOS image sensors. These sensors provide numerous advantages over traditional single-point detectors, including high-resolution imaging, spatially resolved measurements, and the ability to simultaneously detect multiple analytes. Their compact size, low power consumption, and cost-effectiveness further enhance their suitability for portable and point-of-care diagnostic devices. In the future, the integration of machine learning algorithms with these technologies promises to enhance data analysis and interpretation, driving the development of more sophisticated, efficient, and accessible diagnostic tools for diverse applications. Full article

In the transient phase of an atmospheric pressure discharge, the avalanche turns into a streamer discharge with time. Hydrodynamic fluid models are frequently used to describe the formation and propagation of streamers, where charge particle transport is dominated by the creation of space charge. The required electron transport data and rate coefficients for the fluid model are parameterized using the local mean energy approximation (LMEA) and the local field approximation (LFA). In atmospheric pressure applications, the excited species produced in the electrical discharge determine the subsequent conversion chemistry. We performed the fluid model simulation of streamers in nitrogen gas at atmospheric pressure using three different parametrizations for transport and electron excitation rate data. We present the spatial and temporal development of several macroscopic properties such as electron density and energy, and the electric field during the transient phase. The species production efficiency, which is important to understand the efficacy of any application of non-thermal plasmas, is also obtained for the three different parametrizations. Our results suggest that at atmospheric pressure, all three schemes predicted essentially the same macroscopic properties. Therefore, a lower-order method such as LFA, which does not require the solution of the energy conservation equation, should be adequate to determine streamer macroscopic properties to inform most plasma-assisted applications of nitrogen-containing gases at atmospheric pressure. Full article

Under atmospheric pressure, partial discharge initiated by free metallic particles has consistently been a significant factor leading to failures in high-voltage electrical equipment. Simulating the propagation of negative streamer discharge in N₂/O₂ mixtures contributes to a better understanding of the occurrence and evolution of partial discharge, optimizing the insulation performance of electrical equipment. In this study, a two-dimensional plasma fluid dynamics model coupled with the current module was employed to simulate the evolution process of negative streamer discharge caused by one free metallic particle under a suspended potential at 220 kV applied voltage conditions. Simulation results indicated that the discharge process could be divided into two distinct stages: In the first stage, the electron ionization region detached from the electrode surface and propagated independently. During this stage, the corona discharge on the negative electrode surface provided seed electrons crucial for the subsequent development of negative corona discharge. The applied electric field played a dominant role in the propagation of the electron region, especially in the electron avalanche region. In the second stage, space charge gradually took over, causing distortion in the spatial field, particularly generating a substantial electric field gradient near the negative electrode surface, forming an ionization pattern dominated by ionization near the negative electrode surface. These simulation results contribute to a comprehensive understanding of the complex dynamic process of negative streamer discharge initiated by free metallic particles, providing essential insights for optimizing the design of electrical equipment and insulation systems. Full article

The nonlinear characteristics of avalanche photodiodes (APDs) inhibit their performance in high-speed communication systems, thereby limiting their widespread application as optical detectors. Existing theoretical models have not fully elucidated complex phenomena encountered in actual device structures. In this study, actual APD structures exhibiting lower linearity than their ideal counterparts were revealed. Simulation analysis and physical inference based on GaN APDs reveal that electrode size is a noteworthy factor influencing response linearity. This discovery expands the nonlinear theory of APDs, suggesting that APD linearity can be enhanced by suppressing the electrode size effect. A physical model was developed to explain this phenomenon, which is attributed to charge accumulation at the edge of the contact layer. Therefore, we proposed an improved APD design that incorporates an additional gap layer and a buffer layer to stabilize the internal gain under high-current-density conditions, thereby enhancing linearity. Our improved APD design increases the linear threshold for optical input power by 4.46 times. This study not only refines the theoretical model for APD linearity but also opens new pathways for improving the linearity of high-speed optoelectronic detectors. Full article

Electron beam–powder bed fusion (PBF-EB) is an additive manufacturing process that utilizes an electron beam as the heat source to enable material fusion. However, the use of a charge-carrying heat source can sometimes result in sudden powder explosions, usually referred to as “Smoke”, which can lead to process instability or termination. This experimental study investigated the initiation and propagation of Smoke using in situ high-speed synchrotron radiography. The results reveal two key mechanisms for Smoke evolution. In the first step, the beam–powder bed interaction creates electrically isolated particles in the atmosphere. Subsequently, these isolated particles get charged either by direct irradiation by the beam or indirectly by back-scattered electrons. These particles are accelerated by electric repulsion, and new particles in the atmosphere are produced when they impinge on the powder bed. This is the onset of the avalanche process known as Smoke. Based on this understanding, the dependence of Smoke on process parameters such as beam returning time, beam diameter, etc., can be rationalized. Full article

This work explores the possibility of using Low Gain Avalanche Diodes (LGADs) for tracker-based experiments studying Charged Cosmic Rays (CCRs) in space. While conventional silicon microstrip sensors provide only spatial information about the charged particle passing through the tracker, LGADs have the potential to provide additional timing information with a resolution in the order of tens of picoseconds. For the first time, it has been demonstrated that an LGAD with an active area of approximately 1 cm² can achieve a jitter of less than 40 ps. A comparison of design and gain layers is carried out to understand which provides the best time resolution. For this purpose, laboratory measurements of sensors’ electrical properties and gain using LED and an Infrared laser, as well as their jitter, were performed. Full article

The spatiotemporal evolution of photogenerated charge carriers on surfaces and at interfaces of photoactive materials is an important issue for understanding fundamental physical processes in optoelectronic devices and advanced materials. Conventional optical probe-based microscopes that provide indirect information about the dynamic behavior of photogenerated carriers are inherently limited by their poor spatial resolution and large penetration depth. Herein, we develop an ultrafast scanning electron microscope (USEM) with a planar emitter. The photoelectrons per pulse in this USEM can be two orders of magnitude higher than that of a tip emitter, allowing the capture of high-resolution spatiotemporal images. We used the contrast change of the USEM to examine the dynamic nature of surface carriers in an InGaAs/InP avalanche photodiode (APD) after femtosecond laser excitation. It was observed that the photogenerated carriers showed notable longitudinal drift, lateral diffusion, and carrier recombination associated with the presence of photovoltaic potential at the surface. This work demonstrates an in situ multiphysics USEM platform with the capability to stroboscopically record carrier dynamics in space and time. Full article

We present the first reported use of a CMOS-compatible single photon avalanche diode (SPAD) array for the detection of high-energy charged particles, specifically pions, using the Super Proton Synchrotron at CERN, the European Organization for Nuclear Research. The results confirm the detection of incident high-energy pions at 120 GeV, minimally ionizing, which complements the variety of ionizing radiation that can be detected with CMOS SPADs. Full article