Dolatpoor Lakeh, M.; Kammerer, J.-B.; Aguénounon, E.; Issartel, D.; Schell, J.-B.; Rink, S.; Cathelin, A.; Calmon, F.; Uhring, W.
An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique. Sensors 2021, 21, 4014.
https://doi.org/10.3390/s21124014
AMA Style
Dolatpoor Lakeh M, Kammerer J-B, Aguénounon E, Issartel D, Schell J-B, Rink S, Cathelin A, Calmon F, Uhring W.
An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique. Sensors. 2021; 21(12):4014.
https://doi.org/10.3390/s21124014
Chicago/Turabian Style
Dolatpoor Lakeh, Mohammadreza, Jean-Baptiste Kammerer, Enagnon Aguénounon, Dylan Issartel, Jean-Baptiste Schell, Sven Rink, Andreia Cathelin, Francis Calmon, and Wilfried Uhring.
2021. "An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique" Sensors 21, no. 12: 4014.
https://doi.org/10.3390/s21124014
APA Style
Dolatpoor Lakeh, M., Kammerer, J.-B., Aguénounon, E., Issartel, D., Schell, J.-B., Rink, S., Cathelin, A., Calmon, F., & Uhring, W.
(2021). An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique. Sensors, 21(12), 4014.
https://doi.org/10.3390/s21124014
