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Microstructure Design for Fast Lifetime Measurements of Magnetic Tunneling Junctions

1
Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universität Kaiserslautern, 67663 Kaiserslautern, Germany
2
Sensitec GmbH, 55130 Mainz, Germany
3
Institute of Physics, Johannes Gutenberg University, 55122 Mainz, Germany
*
Author to whom correspondence should be addressed.
Sensors 2019, 19(3), 583; https://doi.org/10.3390/s19030583
Received: 18 December 2018 / Revised: 22 January 2019 / Accepted: 24 January 2019 / Published: 30 January 2019
(This article belongs to the Section Physical Sensors)
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Abstract

The estimation of the reliability of magnetic field sensors against failure is a critical point concerning their application for industrial purposes. Due to the physical stochastic nature of the failure events, this can only be done by means of a statistical approach which is extremely time consuming and prevents a continuous observation of the production. Here, we present a novel microstructure design for a parallel measurement of the lifetime characteristics of a sensor population. By making use of two alternative designs and the Weibull statistical distribution function, we are able to measure the lifetime characteristics of a CoFeB/MgO/CoFeB tunneling junction population. The main parameters governing the time evolution of the failure rate are estimated and discussed and the suitability of the microstructure for highly reliable sensor application is proven. View Full-Text
Keywords: Weibull; sensor; reliability; failure; TMR; MTJ; MgO; tunneling barrier; stress Weibull; sensor; reliability; failure; TMR; MTJ; MgO; tunneling barrier; stress
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Conca Parra, A.; Casper, F.; Paul, J.; Lehndorff, R.; Haupt, C.; Jakob, G.; Kläui, M.; Hillebrands, B. Microstructure Design for Fast Lifetime Measurements of Magnetic Tunneling Junctions. Sensors 2019, 19, 583.

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