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Development of an Amorphous Selenium-Based Photodetector Driven by a Diamond Cold Cathode
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Tomoaki Masuzawa, Ichitaro Saito, Takatoshi Yamada, Masanori Onishi, Hisato Yamaguchi, Yu Suzuki, Kousuke Oonuki, Nanako Kato, Shuichi Ogawa, Yuji Takakuwa, Angel T. T. Koh, Daniel H. C. Chua, Yusuke Mori, Tatsuo Shimosawa and Ken Okano
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Abstract
Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of
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Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of wavelengths, including visible, UV and X-ray, where a-Se based flat-panel X-ray detector was proposed. In order to develop an ultra high-sensitivity photodetector with a wide detectable wavelength range, a photodetector was fabricated using a-Se photoconductor and a nitrogen-doped diamond cold cathode. In the study, a prototype photodetector has been developed, and its response to visible and ultraviolet light are characterized.
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