Search Results (14)

The use of wide band gap (WBG) semiconductor switches in power converters is increasing day by day due to their superior chemical and physical properties, such as electrical field strength, drift speed, and thermal conductivity. These new-generation power switches offer advantages over traditional induction cooker systems, such as fast and environmentally friendly heating. The size of passive components can be reduced, and the decreasing inductance value of induction coils and capacitors with low ESR (equivalent series resistance) values contributes to total efficiency. Other design parameters, such as passive components with lower values, heatsinks with low volumes, cooling fans with low power, and induction coils with fewer turns, can offset the cost of WBG power devices. High-frequency operation can also be effective in heating non-ferromagnetic materials like aluminum and copper, making them suitable for heating these types of pans without complex induction coil and power converter designs. However, the use of these new generation power switches necessitates a re-examination of induction coil design. High switching frequency leads to a high resonance frequency in the power converter, which requires lower-value passive components compared to conventional cookers. The most important component is the induction coil, which requires fewer turns and magnetic cores. This study examines the induction heating equivalent circuit, discusses the general structure and design parameters of the induction coil, and performs FEM (finite element method) analyses using Ansys Maxwell. The results show that the induction coil inductance value in new-generation cookers decreases by 80% compared to traditional cookers, and the number of windings and magnetic cores decreases by 50%. These analyses, performed for high-power applications, are also performed for low-power applications. While the inductance value of the induction coil is 90 μH at low frequencies, it is reduced to the range of 5 μH to 20 μH at high frequencies. The number of windings is reduced by half or a quarter. The new-generation cooker system experimentally verifies the coil design based on the parameters derived from the analysis. Full article

This paper reviews sintered silver (s-Ag) die-attach materials for wide band gap (WBG) semiconductor packaging. WBG devices that die-attach with s-Ag have attracted a lot of attention owing to their low energy loss and high temperature operation capabilities. For their practical operation, a reliability design should be established based on the failure of physics of the s-Ag die layer. This paper first focuses on the material characteristics of the s-Ag and tensile mechanical properties. Then, the s-Ag die-attach reliability is assessed with high-temperature storage, power cycling, and thermal shock tests. Each fracture mode was discussed by considering both the fracture surface analysis results and its mechanical properties. Finally, the effective reliability design parameters of the s-Ag die layer are introduced. Full article

Wide Band Gap (WBG) semiconductors have the potential to provide significant improvements in energy efficiency over conventional silicon (Si) semiconductors. While the potential for energy efficiency gains is widely researched, the relation to the energy and resource use during manufacturing processes remains insufficiently studied. In order to appraise the performance of the technology thoroughly, issues such as raw material scarcity, toxicity and environmental impacts need to be investigated in detail. However, sparse Life Cycle Assessment (LCA) data are available for the two currently most widespread WBG semiconductor materials, gallium nitride (GaN or GaN/Si) and silicon carbide (SiC). This paper, for the first time, presents a cradle-to-gate life cycle assessment for a GaN/Si power device. To allow for a full range of indicators, life cycle assessment method EF 3.1 was used to analyze the results. The results identify environmental hotspots associated with different materials and processes: electricity consumption for the processes and clean room facilities, direct emissions of greenhouse gases, gold (when used), and volatile organic chemicals. Finally, we compare this result with publicly available data for Si, GaN and SiC power devices. Full article

Modern induction cookers have started to demand challenging features such as slim design, high power ratings, high performance, and silence. All those requirements are directly related to the power semiconductors used in power converters. Si (silicon)-based power semiconductors are not capable of answering those demands because of strict operating conditions, such as high ambient temperatures. Therefore, WBG (Wide Band Gap) power semiconductors have been getting attention. In this study, WBG power semiconductors will be compared with Si-based IGBT (Insulated Gate Bipolar Transistor) under different operating conditions. The best option to use WBG power semiconductors in modern induction cookers will be analyzed. The performance of a series-resonant half-bridge converter was evaluated under various operating conditions. Measurements were obtained from the real operating conditions of induction hobs. The switching frequency is changed from 20 kHz to 100 kHz, while the power rating is increased to 3.7 kW. In addition to traditional 4-zone induction cooktops, this discussion also provides a comprehensive analysis of high-segment, fully flexible induction cooktops. While the IGBT-based design exhibits 25.79 W power loss per device, the WBG device exhibits 6.87 W in the maximum power condition of conventional induction cooker operation. When it comes to high-frequency operation, the WBG power device exhibits 10.05 W at 95 kHz. Total power loss is still well below that of the IGBT-based conventional design. Appropriate usage of WBG power semiconductors in modern induction cookers can exploit many more benefits than Si-based designs. Full article

Pulsed plasma thrusters (PPT) have demonstrated enormous potential since the 1960s. One major shortcoming is their low thrust efficiency, typically <30%. Most of these losses are due to joule heating, while some can be attributed to poor efficiency of the power processing units (PPUs). We model PPTs to improve their efficiency, by exploring the use of power electronic topologies to enhance the power conversion efficiency from the DC source to the thruster head. Different control approaches are considered, starting off with the basic approach of a fixed frequency flyback converter. Then, the more advanced critical conduction mode (CrCM) flyback, as well as other optimized solutions using commercial off-the-shelf (COTS) components, are presented. Variations of these flyback converters are studied under different control regimes, such as zero voltage switching (ZVS), valley voltage switching (VVS), and hard switched, to enhance the performance and efficiency of the PPU. We compare the max voltage, charge time, and the overall power conversion efficiency for different operating regimes. Our analytical results show that a more dynamic control regime can result in fewer losses and enhanced performance, offering an improved power conversion efficiency for PPUs used with PPTs. An efficiency of 86% was achieved using the variable frequency approach. This work has narrowed the possible PPU options through analytical analysis and has therefore identified a strategic approach for future investigations. In addition, a new low-power coaxial micro-thruster model using equivalent circuit model elements is developed.This is referred to as the Carlow–Stuttgart model and has been validated against experimental data from vacuum chamber tests in Stuttgart’s Pulsed Plasma Laboratory. This work serves as a valuable precursor towards the implementation of highly optimized PPU designs for efficient PPT thrusters for the next PETRUS (pulsed electrothermal thruster for the University of Stuttgart) missions. Full article

Electric vehicles (EVs) are expected to take over the transportation and mobility market over traditional internal combustion engine (ICE) vehicles soon. The internal power demands of EVs are expected to increase. The reason for this is to achieve a longer driving range for the EV and to provide the required power for the low-voltage (LV) network auxiliary loads. To illustrate, there are extra added sensors, cameras, and small actuating motors, especially for future autonomous vehicles. Therefore, a new electrical/electronic (E/E) architecture is required to convert the high-voltage (HV) traction battery voltage (e.g., 320–800 V DC) to the standard LV levels with high current ratings of 5 kW and more. This HV-LV DC-DC converter is known in the literature as an auxiliary power module (APM). The standard LV rails in an EV are the 12 V/24 V rail to supply for an instant the EV’s lighting and electronic control units (ECUs), while the 48 V rail is required for propulsive loads, such as air compressors and electric power steering systems. Furthermore, in a few applications, this converter is responsible for voltage upwards to support the start of a hybrid vehicle or emergency backup power handling, which requires bidirectional capability. Therefore, in this paper, possible APM topologies for EV applications are presented. In line with this, the main standards and safety requirements of the APMs are presented. Detailed quantitative and qualitative comparisons between topologies and their associated control schemes are discussed. In addition, the placement of the APM in the EV cooling cycle has been investigated and demonstrated. Finally, the industrial trends and future research targets for the APM in automotive applications are outlined. Full article

Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied a certain share of the market with rapid momentum, owing to their excellent electrical, mechanical, and thermal properties. The reliability of WBG power electronic devices is inseparable from the reliability of power electronic systems and is a significant concern for the industry and for academia. This review attempts to summarize the recent progress in the failure mechanisms of WBG power electronic semiconductor chips, the reliability of WBG power electronic packaging, and the reliability models for predicting the remaining life of WBG devices. Firstly, the typical structures and dominant failure mechanisms of SiC MOSFETs and GaN HEMTs are discussed. This is followed by a description of power electronic packaging failure mechanisms and available packaging materials for WBG power electronic devices. In addition, the reliability models based on physics-of-failure (including time-dependent dielectric breakdown models, stress–strain models, and thermal cycling models), and data-driven models are introduced. This review may provide useful references for the reliability research of WBG power devices. Full article

Nowadays, medium- and high-power applications make use of silicon carbide (SiC) MOSFETs, and many times their parallelization is necessary. Unfortunately, this requirement causes an inevitable current unbalance between power devices, affecting the performance of power switches. Over the last decade, numerous studies have been conducted, proposing various techniques with the capability of mitigating current unbalance for a number of discrete parallel SiC MOSFETs. However, the realization of most methods requires knowledge of the technical characteristics of power devices, adding extra cost to the system, since screening is a time-consuming and costly process. This necessity reduces the possibilities of such a technique being implemented in power electronics applications, preventing the exploitation of the exceptional features of SiC MOSFETs. In addition, most of these techniques can suppress only the current unbalance, which occurs during turn-on and turn-off transitions. In this paper, an active auto-suppression current unbalance technique is proposed, requiring no device screening. The active method is a closed-loop system capable of sensing and eliminating the entire current unbalance between parallel SiC MOSFETs automatically, actively, and independently of the cause. Simulation results are presented to demonstrate the feasibility and effectiveness of the proposed technique. Full article

High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, since the last decade, the post-Si era began with the pervasive introduction of wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), which opened new perspectives for high-κ materials in these emerging technologies. In this context, aluminium and hafnium oxides (i.e., Al₂O₃, HfO₂) and some rare earth oxides (e.g., CeO₂, Gd₂O₃, Sc₂O₃) are promising high-κ binary oxides that can find application as gate dielectric layers in the next generation of high-power and high-frequency transistors based on SiC and GaN. This review paper gives a general overview of high-permittivity binary oxides thin films for post-Si electronic devices. In particular, focus is placed on high-κ binary oxides grown by atomic layer deposition on WBG semiconductors (silicon carbide and gallium nitride), as either amorphous or crystalline films. The impacts of deposition modes and pre- or postdeposition treatments are both discussed. Moreover, the dielectric behaviour of these films is also presented, and some examples of high-κ binary oxides applied to SiC and GaN transistors are reported. The potential advantages and the current limitations of these technologies are highlighted. Full article

With the introduction of the more electric aircraft, there is growing emphasis on improving overall efficiency and thus gravimetric and volumetric power density, as well as smart functionalities and safety of an aircraft. In future on-board power distribution networks, so-called high voltage DC (HVDC, typically +/−270VDC) supplies will be introduced to facilitate distribution and reduce the associated mass and volume, including harness. Future aircraft power distribution systems will also very likely include energy storage devices (probably, batteries) for emergency back up and engine starting. Correspondingly, novel DC-DC conversion solutions are required, which can interface the traditional low voltage (28 V) DC bus with the new 270 V one. Such solutions presently need to cater for a significant degree of flexibility in their power ratings, power transfer capability and number of inputs/outputs. Specifically, multi-port power-scalable bi-directional converters are required. This paper presents the design and testing of such a solution, addressing the use of leading edge wide-band-gap (WBG) solid state technology, especially silicon carbide (SiC), for use as high-frequency switches within the bi-directional converter on the high-voltage side. Full article

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R_{ON_dyn}) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R_DSON) characteristics under ⁶⁰Co gamma radiation of two different commercial power GaN HEMT structures. Different bias conditions were applied to both structures during irradiation and some static measurements, such as threshold voltage and leakage currents, were performed. Additionally, dynamic resistance was measured to obtain practical information about device trapping under radiation during switching mode, and how trapping in the device is affected by gamma radiation. The experimental results showed a high dependence on the HEMT structure and the bias condition applied during irradiation. Specifically, a free current collapse structure showed great stability until 3.7 Mrad(Si), unlike the other structure tested, which showed high degradation of the parameters measured. The changes were demonstrated to be due to trapping effects generated or enhanced by gamma radiation. These new results obtained about R_{ON_dyn} will help elucidate trap behaviors in switching transistors. Full article

Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys (e.g., Al_xGa_1−xN) are promising semiconductors for the next generation of high-power and high-frequency devices. However, there are still several technological concerns hindering the complete exploitation of these materials. As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications. This review paper will give a brief overview on some scientific and technological aspects related to the current normally-off GaN HEMTs technology. A special focus will be put on the p-GaN gate and on the recessed gate hybrid metal insulator semiconductor high electron mobility transistor (MISHEMT), discussing the role of the metal on the p-GaN gate and of the insulator in the recessed MISHEMT region. Finally, the advantages and disadvantages in the processing and performances of the most common technological solutions for normally-off GaN transistors will be summarized. Full article

Circuit breakers (CBs) are the main protection devices for both alternating current (AC) and direct current (DC) power systems, ranging from tens of watts up to megawatts. This paper reviews the current status for solid-state circuit breakers (SSCBs) as well as hybrid circuit breakers (HCBs) with semiconductor power devices. A few novel SSCB and HCB concepts are described in this paper, including advantage and limitation discussions of wide-band-gap (WBG) devices in basic SSCB/HCB configuration by simulation and 360 V/150 A experimental verifications. Novel SSCB/HCB configurations combining ultra-fast switching and high efficiency at normal operation are proposed. Different types of power devices are installed in these circuit breakers to achieve adequate performance. Challenges and future trends of semiconductor power devices in SSCB/HCB with different voltage/power levels and special performance requirements are clarified. Full article