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22 pages, 2437 KiB  
Article
Anomaly Detection of Acoustic Signals in Ultra-High Voltage Converter Valves Based on the FAVAE-AS
by Shuyan Pan, Mingzhu Tang, Na Li, Jiawen Zuo and Xingpeng Zhou
Sensors 2025, 25(15), 4716; https://doi.org/10.3390/s25154716 (registering DOI) - 31 Jul 2025
Viewed by 72
Abstract
The converter valve is the core component of the ultra-high voltage direct current (UHVDC) transmission system, and its fault detection is very important to ensure the safe and stable operation of the transmission system. However, the voiceprint signals collected by converter stations under [...] Read more.
The converter valve is the core component of the ultra-high voltage direct current (UHVDC) transmission system, and its fault detection is very important to ensure the safe and stable operation of the transmission system. However, the voiceprint signals collected by converter stations under complex operating conditions are often affected by background noise, spikes, and nonlinear interference. Traditional methods make it difficult to achieve high-precision detection due to the lack of feature extraction ability and poor noise robustness. This paper proposes a fault-aware variational self-encoder model (FAVAE-AS) based on a weak correlation between attention and self-supervised learning. It extracts probability features via a conditional variational autoencoder, strengthens feature representation using multi-layer convolution and residual connections, and introduces a weak correlation attention mechanism to capture global time point relationships. A self-supervised learning module with six signal transformations improves generalization, while KL divergence-based correlation inconsistency quantization with dynamic thresholds enables accurate anomaly detection. Experiments show that FAVAE-AS achieves 0.925 accuracy in fault detection, which is 5% higher than previous methods, and has strong robustness. This research provides critical technical support for UHVDC system safety by addressing converter valve acoustic anomaly detection. It proposes an extensible framework for industrial intelligent maintenance. Full article
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19 pages, 3051 KiB  
Article
Design of a Current-Mode OTA-Based Memristor Emulator for Neuromorphic Medical Application
by Amel Neifar, Imen Barraj, Hassen Mestiri and Mohamed Masmoudi
Micromachines 2025, 16(8), 848; https://doi.org/10.3390/mi16080848 - 24 Jul 2025
Viewed by 262
Abstract
This study presents transistor-level simulation results for a novel memristor emulator circuit. The design incorporates an inverter and a current-mode-controlled operational transconductance amplifier to stabilize the output voltage. Transient performance is evaluated across a 20 MHz to 100 MHz frequency range. Simulations using [...] Read more.
This study presents transistor-level simulation results for a novel memristor emulator circuit. The design incorporates an inverter and a current-mode-controlled operational transconductance amplifier to stabilize the output voltage. Transient performance is evaluated across a 20 MHz to 100 MHz frequency range. Simulations using 0.18 μm TSMC technology confirm the circuit’s functionality, demonstrating a power consumption of 0.1 mW at a 1.2 V supply. The memristor model’s reliability is verified through corner simulations, along with Monte Carlo and temperature variation tests. Furthermore, the emulator is applied in a Memristive Integrate-and-Fire neuron circuit, a CMOS-based system that replicates biological neuron behavior for spike generation, enabling ultra-low-power computing and advanced processing in retinal prosthesis applications. Full article
(This article belongs to the Section E:Engineering and Technology)
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23 pages, 3863 KiB  
Review
Memristor-Based Spiking Neuromorphic Systems Toward Brain-Inspired Perception and Computing
by Xiangjing Wang, Yixin Zhu, Zili Zhou, Xin Chen and Xiaojun Jia
Nanomaterials 2025, 15(14), 1130; https://doi.org/10.3390/nano15141130 - 21 Jul 2025
Viewed by 538
Abstract
Threshold-switching memristors (TSMs) are emerging as key enablers for hardware spiking neural networks, offering intrinsic spiking dynamics, sub-pJ energy consumption, and nanoscale footprints ideal for brain-inspired computing at the edge. This review provides a comprehensive examination of how TSMs emulate diverse spiking behaviors—including [...] Read more.
Threshold-switching memristors (TSMs) are emerging as key enablers for hardware spiking neural networks, offering intrinsic spiking dynamics, sub-pJ energy consumption, and nanoscale footprints ideal for brain-inspired computing at the edge. This review provides a comprehensive examination of how TSMs emulate diverse spiking behaviors—including oscillatory, leaky integrate-and-fire (LIF), Hodgkin–Huxley (H-H), and stochastic dynamics—and how these features enable compact, energy-efficient neuromorphic systems. We analyze the physical switching mechanisms of redox and Mott-type TSMs, discuss their voltage-dependent dynamics, and assess their suitability for spike generation. We review memristor-based neuron circuits regarding architectures, materials, and key performance metrics. At the system level, we summarize bio-inspired neuromorphic platforms integrating TSM neurons with visual, tactile, thermal, and olfactory sensors, achieving real-time edge computation with high accuracy and low power. Finally, we critically examine key challenges—such as stochastic switching origins, device variability, and endurance limits—and propose future directions toward reconfigurable, robust, and scalable memristive neuromorphic architectures. Full article
(This article belongs to the Special Issue Neuromorphic Devices: Materials, Structures and Bionic Applications)
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15 pages, 2113 KiB  
Article
Improved Segmented Control Strategy for Continuous Fault Ride-Through of Doubly-Fed Wind Turbines
by Tie Chen, Yifan Xu, Yue Liu, Junlin Ren and Youyuan Fan
Energies 2025, 18(14), 3845; https://doi.org/10.3390/en18143845 - 19 Jul 2025
Viewed by 210
Abstract
Aiming at the transient overcurrent problem faced by doubly-fed induction generators (DFIGs) during continuous voltage fault ride-through, a segmented control strategy based on the rotor side converter (RSC) is proposed. First, through theoretical analysis of the relationship between stator current and transient induced [...] Read more.
Aiming at the transient overcurrent problem faced by doubly-fed induction generators (DFIGs) during continuous voltage fault ride-through, a segmented control strategy based on the rotor side converter (RSC) is proposed. First, through theoretical analysis of the relationship between stator current and transient induced electromotive force (EMF) in each stage of continuous faults, a feedforward control strategy based on the transient component of stator current is proposed. The observable stator current is extracted for its transient component, which is used as a rotor voltage compensation term to effectively counteract the influence of transient EMF. Meanwhile, a fuzzy control algorithm is introduced during the low voltage ride-through (LVRT) stage to dynamically adjust the virtual resistance value, enhancing the system’s damping characteristics. Studies show that this strategy significantly suppresses rotor current spikes in all stages of voltage ride-through. Finally, simulation results verify that the proposed method improves the ride-through performance of DFIG under continuous voltage faults. Full article
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16 pages, 5447 KiB  
Article
A Gate Driver for Crosstalk Suppression of eGaN HEMT Power Devices
by Longsheng Zhang, Kaihong Wang, Shilong Guo and Binxin Zhu
J. Low Power Electron. Appl. 2025, 15(3), 38; https://doi.org/10.3390/jlpea15030038 - 6 Jul 2025
Viewed by 246
Abstract
The eGaN HEMT power devices face serious crosstalk problems when applied to high-frequency bridge circuits, thereby limiting the switching performance of these devices. To address this issue, a gate driver is proposed in this paper that can suppress both positive and negative crosstalk [...] Read more.
The eGaN HEMT power devices face serious crosstalk problems when applied to high-frequency bridge circuits, thereby limiting the switching performance of these devices. To address this issue, a gate driver is proposed in this paper that can suppress both positive and negative crosstalk of eGaN HEMT power devices, offering the advantages of simple control and easy integration. The basic idea is to suppress positive crosstalk by constructing a negative voltage capacitor, and to suppress negative crosstalk by reducing the impedance of the gate loop. To verify the capability of the proposed gate driver, double-pulse and synchronous Buck test platforms are constructed. The experimental results clearly demonstrate that the proposed gate driver reduces the positive and negative crosstalk spikes by 2.03 V and 1.54 V, respectively, ensuring that the positive and negative crosstalk spikes fall within a safe operating range. Additionally, the turn-off speed of the device is enhanced, leading to a reduction in switching loss. Full article
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19 pages, 3049 KiB  
Article
Non-Isolated Ultra-High Step-Up DC-DC Converter Topology Using Coupled-Inductor-Based Inverting Buck-Boost and Voltage Multipliers
by Van-Tinh Duong, Zeeshan Waheed and Woojin Choi
Electronics 2025, 14(13), 2519; https://doi.org/10.3390/electronics14132519 - 20 Jun 2025
Viewed by 889
Abstract
This paper introduces a non-isolated ultra-high voltage gain topology using the combination of the coupled-inductor-based inverting buck-boost converter (IBB) and voltage multiplier (VM) structure. In the proposed converter, an ultra-high step-up voltage gain can be achieved with a small duty cycle thanks to [...] Read more.
This paper introduces a non-isolated ultra-high voltage gain topology using the combination of the coupled-inductor-based inverting buck-boost converter (IBB) and voltage multiplier (VM) structure. In the proposed converter, an ultra-high step-up voltage gain can be achieved with a small duty cycle thanks to a coupled inductor and VMs. The voltage stress and the losses of the switches in the proposed converter are even less than other conventional topologies. Unlike other coupled-inductor topologies, a large voltage spike caused by the leakage inductance of the coupled inductor is smoothed by the capacitor in the voltage multiplier. In addition, zero-voltage switching (ZVS) turn-on for the switches and zero-current switching (ZCS) turn-off for the diodes can be achieved with the energy stored in the leakage inductance. A 360 W (40 V/380 V) prototype converter is implemented to prove the advantages of the proposed converter, with a maximum efficiency of 98.4%. Full article
(This article belongs to the Special Issue Advanced DC-DC Converter Topology Design, Control, Application)
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14 pages, 3140 KiB  
Article
Human Stem Cell-Derived Neural Organoids for the Discovery of Antiseizure Agents
by Hamed Salmanzadeh and Robert F. Halliwell
Receptors 2025, 4(3), 12; https://doi.org/10.3390/receptors4030012 - 20 Jun 2025
Viewed by 617
Abstract
Background: The development of cerebral organoids created from human pluripotent stem cells in 3D culture may greatly improve the discovery of neuropsychiatric medicines. Methods: In the current study we differentiated neural organoids from a human pluripotent stem cell line in vitro, [...] Read more.
Background: The development of cerebral organoids created from human pluripotent stem cells in 3D culture may greatly improve the discovery of neuropsychiatric medicines. Methods: In the current study we differentiated neural organoids from a human pluripotent stem cell line in vitro, recorded the development of neurophysiological activity using multielectrode arrays (MEAs) and characterized the neuropharmacology of synaptic signaling over 8 months in vitro. In addition, we investigated the ability of these organoids to display epileptiform activity in response to a convulsant agent and the effects of antiseizure medicines to inhibit this abnormal activity. Results: Single and bursts of action potentials from individual neurons and network bursts were recorded on the MEA plates and significantly increased and became more complex from week 7 to week 30, consistent with neural network formation. Neural spiking was reduced by the Na channel blocker tetrodotoxin but increased by the inhibitor of KV7 potassium channels XE991, confirming the involvement of voltage-gated sodium and potassium channels in action potential activity. The GABA antagonists bicuculline and picrotoxin each increased the spike rate, consistent with inhibitory synaptic signaling. In contrast, the glutamate receptor antagonist kynurenic acid inhibited the spike rate, consistent with excitatory synaptic transmission in the organoids. The convulsant 4-aminopyridine increased spiking, bursts and synchronized firing, consistent with epileptiform activity in vitro. The anticonvulsants carbamazepine, ethosuximide and diazepam each inhibited this epileptiform neural activity. Conclusions: Together, our data demonstrate that neural organoids form inhibitory and excitatory synaptic circuits, generate epileptiform activity in response to a convulsant agent and detect the antiseizure properties of diverse antiepileptic drugs, supporting their value in drug discovery. Full article
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17 pages, 6997 KiB  
Article
Wettability’s Challenge to High-Voltage Insulators: Polyurethane as Preventive Coating
by Touqeer Ahmad Raza, Muhammad Kamran, Syed Ahtisham Mehmood Shah and Muhammad Mehran Bashir
Surfaces 2025, 8(2), 40; https://doi.org/10.3390/surfaces8020040 - 19 Jun 2025
Viewed by 455
Abstract
The failure of a porcelain insulator on a transmission line is a crucial cause of power supply interruptions, leading to poor reliability and revenue loss. The insulator’s performance is adversely affected by environmental contaminants, and wettability intensifies this adverse effect by developing a [...] Read more.
The failure of a porcelain insulator on a transmission line is a crucial cause of power supply interruptions, leading to poor reliability and revenue loss. The insulator’s performance is adversely affected by environmental contaminants, and wettability intensifies this adverse effect by developing a conductive path along the insulator’s surface, leading to premature flashover and insulator failure. This work aims to analyze the response of the electric field distribution and current density using the finite element method (FEM) under different wettability conditions. Discrete water droplets were placed along the surface, and the contact angle was varied to represent different levels of surface hydrophobicity. Abrupt rises and spikes were observed on the plots for the electric field and current density distribution, indicating distortion; however, the distortion kept on decreasing with the increase in the contact angle. Overall, the average stress followed a declining pattern, where the values of the electric field were reduced from 2.588 to 2.412 kV/cm, and current the density was reduced from 0.187 to 0.068 nA/cm2 for an increase in the contact angle from 60° to 140°. Simulation results advocate for hydrophobic insulator surfaces. Therefore, a proper coating is necessary to enrich hydrophobicity and mitigate the adversity of wettability. Polyurethane, due to its excellent hydrophobic and insulating properties, offers a potential coating. Flashover voltage tests have been performed for the coated insulator under dry and wet conditions, where the flashover voltage improved from 79.14 kV to 82.04 kV and 48.4 kV to 53.8 kV, respectively, which supports the simulations’ outcomes. Full article
(This article belongs to the Special Issue Surface Science: Polymer Thin Films, Coatings and Adhesives)
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35 pages, 11695 KiB  
Article
Polymorphism in Glu-Phe-Asp Proteinoids
by Panagiotis Mougkogiannis and Andrew Adamatzky
Biomimetics 2025, 10(6), 360; https://doi.org/10.3390/biomimetics10060360 - 3 Jun 2025
Viewed by 494
Abstract
Glu-Phe-Asp (GFD) proteinoids represent a class of synthetic polypeptides capable of self-assembling into microspheres, fibres, or combinations thereof, with morphology dramatically influencing their electrical properties. Extended recordings and detailed waveforms demonstrate that microspheres generate rapid, nerve-like spikes, while fibres exhibit consistent and gradual [...] Read more.
Glu-Phe-Asp (GFD) proteinoids represent a class of synthetic polypeptides capable of self-assembling into microspheres, fibres, or combinations thereof, with morphology dramatically influencing their electrical properties. Extended recordings and detailed waveforms demonstrate that microspheres generate rapid, nerve-like spikes, while fibres exhibit consistent and gradual variations in voltage. Mixed networks integrate multiple components to achieve a balanced output. Electrochemical measurements show clear differences. Microspheres have a low capacitance of 1.926±5.735μF. They show high impedance at 6646.282±178.664 Ohm. Their resistance is low, measuring 15,830.739 ± 652.514 mΩ. This structure allows for quick ionic transport, leading to spiking behaviour. Fibres show high capacitance (9.912±0.171μF) and low impedance (209.400±0.286 Ohm). They also have high resistance (163,067.613 ± 9253.064 mΩ). This combination helps with charge storage and slow potential changes. The 50:50 mixture shows middle values for all parameters. This confirms that hybrid electrical properties have emerged. The differences come from basic structural changes. Microspheres trap ions in small, round spaces. This allows for quick release. In contrast, fibers spread ions along their length. This leads to slower wave propagation. In mixed systems, diverse voltage zones emerge, suggesting cooperative dynamics between morphologies. This electrical polymorphism in simple proteinoid systems may explain complexity in biological systems. This study shows that structural polymorphism in GFD proteinoids affects their electrical properties. This finding is significant for biomimetic computing and sheds light on prebiotic information-processing systems. Full article
(This article belongs to the Section Biomimetic Surfaces and Interfaces)
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12 pages, 2708 KiB  
Article
Starch–Glycerol-Based Hydrogel Memristors for Bio-Inspired Auditory Neuron Applications
by Jiachu Xie, Yuehang Ju, Zhenwei Zhang, Dianzhong Wen and Lu Wang
Gels 2025, 11(6), 423; https://doi.org/10.3390/gels11060423 - 1 Jun 2025
Viewed by 453
Abstract
In the era of artificial intelligence, the demand for rapid and efficient data processing is growing, and traditional computing architectures are increasingly struggling to meet these needs. Against this backdrop, memristor devices, capable of mimicking the computational functions of brain neural networks, have [...] Read more.
In the era of artificial intelligence, the demand for rapid and efficient data processing is growing, and traditional computing architectures are increasingly struggling to meet these needs. Against this backdrop, memristor devices, capable of mimicking the computational functions of brain neural networks, have emerged as key components in neuromorphic systems. Despite this, memristors still face many challenges in biomimetic functionality and circuit integration. In this context, a starch–glycerol-based hydrogel memristor was developed using starch as the dielectric material. The starch–glycerol–water mixture employed in this study has been widely recognized in literature as a physically cross-linked hydrogel system with a three-dimensional network, and both high water content and mechanical flexibility. This memristor demonstrates a high current switching ratio and stable threshold voltage, showing great potential in mimicking the activity of biological neurons. The device possesses the functionality of auditory neurons, not only achieving artificial spiking neuron discharge but also accomplishing the spatiotemporal summation of input information. In addition, we demonstrate the application capabilities of this artificial auditory neuron in gain modulation and in the synchronization detection of sound signals, further highlighting its potential in neuromorphic engineering applications. These results suggest that starch-based hydrogel memristors offer a promising platform for the construction of bio-inspired auditory neuron circuits and flexible neuromorphic systems. Full article
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14 pages, 1835 KiB  
Article
Dual Mechanisms of the Diazepine-Benzimidazole Derivative, DAB-19, in Modulating Glutamatergic Neurotransmission
by Maxim V. Nikolaev, Irina M. Fedorova, Oxana V. Chistyakova, Tatiana Yu. Postnikova, Kira Kh. Kim, Mikhail Yu. Dron, Aleksey V. Zaitsev and Denis B. Tikhonov
Int. J. Mol. Sci. 2025, 26(11), 5299; https://doi.org/10.3390/ijms26115299 - 30 May 2025
Viewed by 510
Abstract
The search for novel compounds with anticonvulsant properties remains a key focus in neuropharmacology. Recently, the diazepine-benzimidazole derivative, DAB-19, has emerged as a promising candidate due to its demonstrated anxiolytic and analgesic effects. In this study, we investigate the mechanisms underlying DAB-19’s activity, [...] Read more.
The search for novel compounds with anticonvulsant properties remains a key focus in neuropharmacology. Recently, the diazepine-benzimidazole derivative, DAB-19, has emerged as a promising candidate due to its demonstrated anxiolytic and analgesic effects. In this study, we investigate the mechanisms underlying DAB-19’s activity, focusing on its impact on glutamatergic transmission, a key target in the pathophysiology of various central nervous system disorders. Intriguingly, while DAB-19 suppressed evoked glutamatergic transmission in rat brain slices, it simultaneously enhanced spontaneous neurotransmission. Further experiments on glutamatergic neuromuscular synapses in fly larvae revealed two distinct mechanisms: calcium-dependent potentiation of glutamate release and inhibition of spike propagation via blockade of voltage-gated sodium channels. The latter effect was directly confirmed in rat brain neurons. Given its action on sodium channels, we tested DAB-19 in the pentylenetetrazole model, where it delayed seizure onset but did not prevent seizures. These findings position DAB-19 as a multifaceted compound with significant therapeutic potential. Full article
(This article belongs to the Special Issue Epilepsy: From Molecular Basis to Therapy, 2nd Edition)
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27 pages, 6230 KiB  
Review
Critical Perspectives on the Design of Polymeric Materials for Mitigating Thermal Runaway in Lithium-Ion Batteries
by Hangyu Zhou, Jianhong He, Shang Gao, Xuan Cao, Chenghui Li, Qing Zhang, Jialiang Gao, Yongzheng Yao, Chuanwei Zhai, Zhongchun Hu, Hongqing Zhu and Rongxue Kang
Polymers 2025, 17(9), 1227; https://doi.org/10.3390/polym17091227 - 30 Apr 2025
Viewed by 946
Abstract
During the global energy transition, electric vehicles and electrochemical energy storage systems are rapidly gaining popularity, leading to a strong demand for lithium battery technology with high energy density and long lifespan. This technological advancement, however, hinges critically on resolving safety challenges posed [...] Read more.
During the global energy transition, electric vehicles and electrochemical energy storage systems are rapidly gaining popularity, leading to a strong demand for lithium battery technology with high energy density and long lifespan. This technological advancement, however, hinges critically on resolving safety challenges posed by intrinsically reactive components particularly flammable polymeric separators, organic electrolyte systems, and high-capacity electrodes, which collectively elevate risks of thermal runaway (TR) under operational conditions. The strategic integration of smart polymeric materials that enable early detection of TR precursors (e.g., gas evolution, thermal spikes, voltage anomalies) and autonomously interrupt TR propagation chains has emerged as a vital paradigm for next-generation battery safety engineering. This paper begins with the development characteristics of thermal runaway in lithium batteries and analyzes recent breakthroughs in polymer-centric component design, multi-parameter sensing polymers, and TR propagation barriers. The discussion extends to intelligent material systems for emerging battery chemistries (e.g., solid-state, lithium-metal) and extreme operational environments, proposing design frameworks that leverage polymer multifunctionality for hierarchical safety mechanisms. These insights establish foundational principles for developing polymer-integrated lithium batteries that harmonize high energy density with intrinsic safety, addressing critical needs in sustainable energy infrastructure. Full article
(This article belongs to the Special Issue Advanced Polymer Materials for Safe Ion Batteries)
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20 pages, 6141 KiB  
Article
Optimization of Snubber Circuit Parameters for AC–AC Chopper Converter
by Zhenyu Shi, Liyang Wei, Jinlong He, Gang Li and Chunwei Song
Electronics 2025, 14(9), 1733; https://doi.org/10.3390/electronics14091733 - 24 Apr 2025
Viewed by 513
Abstract
The AC-AC chopper converter, as a direct power conversion device without DC intermediate stages, has garnered significant attention due to its advantages of high efficiency and fast dynamic response. However, the voltage spikes induced by switching device turn-off transients (reaching 143% of the [...] Read more.
The AC-AC chopper converter, as a direct power conversion device without DC intermediate stages, has garnered significant attention due to its advantages of high efficiency and fast dynamic response. However, the voltage spikes induced by switching device turn-off transients (reaching 143% of the reference voltage) severely threaten system reliability, while traditional RC snubber circuit parameter design methods (e.g., empirical formula-based approaches) exhibit limited suppression effectiveness. To address this issue, this paper proposes an optimized parameter design method for RC snubber circuits in AC-AC chopper converters by establishing a turn-off transient energy transfer model to optimize snubber resistor and capacitor parameters. Experimental results from the prototype based on the TMS320F28335 digital controller demonstrate that the optimized method suppresses voltage spikes to <10% and, even under a 40% step load variation from the nominal value, maintains output voltage fluctuations stably below 5%. Full article
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17 pages, 3167 KiB  
Article
Research on a Three-Phase Digital Inverter Power Supply Based on Gallium Nitride
by Yannan Yu, Xiao Zhu and Jichi Yan
Electronics 2025, 14(8), 1599; https://doi.org/10.3390/electronics14081599 - 15 Apr 2025
Viewed by 471
Abstract
In this study, GaN devices are implemented in low-power three-phase inverters to achieve high-frequency operation and a compact design. A 500 W power-rated prototype operating at a switching frequency of 200 kHz was designed. A linear active disturbance rejection control (LADRC) strategy was [...] Read more.
In this study, GaN devices are implemented in low-power three-phase inverters to achieve high-frequency operation and a compact design. A 500 W power-rated prototype operating at a switching frequency of 200 kHz was designed. A linear active disturbance rejection control (LADRC) strategy was introduced to solve the issue of high-frequency inverter oscillation. Additionally, the driving circuit was optimized to address the issue of voltage spikes in the drive voltage. Subsequently, the feasibility and effectiveness of the control strategy were validated through a system simulation model built in Simulink. Lastly, a digital control algorithm was developed by leveraging the capabilities of DSP28034. During testing at an operating frequency of 200 kHz, it was found that the drive voltage waveform was excellent and that the three-phase inverter output remained stable, with no signs of oscillation. The implemented design effectively suppresses peak drive voltage levels, demonstrating optimized gate drive circuitry performance. The output waveform of three-phase inverter proves the effectiveness of the control strategy. Full article
(This article belongs to the Section Power Electronics)
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22 pages, 9985 KiB  
Article
High-Voltage Gain Single-Switch Quadratic Semi-SEPIC Converters for Powering High-Voltage Sensors Suitable for Renewable Energy Systems and Industrial Automation with Low Voltage Stresses
by Frederick Nana Oppong, Soroush Esmaeili and Ashraf Ali Khan
Sensors 2025, 25(8), 2424; https://doi.org/10.3390/s25082424 - 11 Apr 2025
Viewed by 451
Abstract
This paper presents two new non-isolated DC-DC converters with and without a coupled inductor based on quadratic voltage conversion. Firstly, the coupled inductor-less type is explained in detail. It employs a voltage-boosting cell and a modified SEPIC structure to provide a high voltage [...] Read more.
This paper presents two new non-isolated DC-DC converters with and without a coupled inductor based on quadratic voltage conversion. Firstly, the coupled inductor-less type is explained in detail. It employs a voltage-boosting cell and a modified SEPIC structure to provide a high voltage boost ability with a lower and practical value for the switching duty cycle. This allows for lower power loss compared to conventional DC-DC converters. Having only one switch in the proposed converter simplifies the control and reduces the required number of control signals. Furthermore, the presented transformer-less structure can help avoid producing huge voltage spikes across the power switch. In traditional quadratic SEPIC converters, the voltage-boosting cell’s capacitor experiences relatively high voltage stress due to the voltage multiplication process. In contrast, the proposed converter offers significantly lower voltage stresses. Hence, it becomes possible to utilize a capacitor with a lower voltage rating, leading to cost savings and improved reliability and availability of suitable components. The first topology can be improved for ultrahigh voltage applications by replacing the middle inductor with a coupled transformer. Consequently, a higher voltage range with a lower switching duty cycle can be attained. Theoretical analysis and mathematical derivations are provided, and the comparison section claims the proposed converter’s ability to minimize voltage stress across the switch and output diode. Finally, experimental results are given to verify the effectiveness of the proposed converters at an output power of 260 W. Full article
(This article belongs to the Section Physical Sensors)
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