Search Results (461)

Quantum dots (QDs) composed of the narrow-bandgap semiconductor PbTe were incorporated into the depletion region of p–n junctions based on wide-bandgap II–VI semiconductors (p-ZnTe/n-CdTe). The heterostructures were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates. The depletion region was engineered by depositing 20 alternating thin layers of CdTe and PbTe, then thermal annealing under ultrahigh vacuum. As revealed by cross-sectional scanning electron microscopy (SEM), the initially continuous PbTe layers transformed into arrays of zero-dimensional nanostructures, namely PbTe QDs. The formation of PbTe QDs in a CdTe matrix arises from the structural mismatch between the zinc blende and rock-salt crystal structures of the two materials. Electron beam-induced current (EBIC) scans confirmed that the QDs are localized within the depleted charge region between the p-ZnTe and n-CdTe layers. The resulting wide-gap diodes containing narrow-band QDs show pronounced sensitivity to infrared radiation in the spectral range of 1–4.5 μm, with a peak responsivity of approximately 8 V/W at a wavelength of ~2.0 μm and a temperature of 200 K. A red-shift in the cutoff wavelength when temperature decreases indicates that the infrared (IR) response is governed by band-to-band optical transitions in the PbTe QDs. In addition, the devices show sensitivity to visible radiation, with a maximum responsivity of 20 V/W at 0.69 μm. These results demonstrate that wide-bandgap p–n junctions incorporating narrow-bandgap QDs can function as dual-wavelength (visible and infrared) photodetectors, with potential applications in two-color detection and infrared solar cells. Full article

Neuromorphic computing, an emerging computational paradigm, aims to overcome the bottlenecks of the traditional von Neumann architecture. Two-dimensional materials serve as ideal platforms for constructing artificial synaptic devices, yet existing devices based on these materials face challenges such as insufficient stability. Indium selenide (InSe), a two-dimensional semiconductor with unique properties, demonstrates significant potential in the field of neuromorphic devices, though its application research remains in the initial stage. This study presents an artificial synaptic device based on the InSe/Charge Trapping Layer (CTL)/h-BN heterojunction. By applying oxygen plasma treatment to h-BN to form a controllable charge-trapping layer, efficient regulation of carriers in the InSe channel is achieved. The device successfully emulates fundamental synaptic behaviors including paired-pulse facilitation and long-term potentiation/inhibition, exhibiting excellent reproducibility and stability. Through investigating the influence of electrical pulse parameters on synaptic weights, a structure–activity relationship between device performance and structural parameters is established. Experimental results show that the device features outstanding linearity and symmetry, realizing the simulation of key synaptic behaviors such as dynamic conversion between short-term and long-term plasticity. It possesses a high dynamic range ratio of 7.12 and robust multi-level conductance tuning capability, with stability verified through 64 pulse cycle tests. This research provides experimental evidence for understanding interfacial charge storage mechanisms, paves the way for developing high-performance neuromorphic computing devices, and holds broad application prospects in brain-inspired computing and artificial intelligence hardware. Full article

A cascade deep learning approach is proposed for optimizing the design and control of a dual-frequency induction heating system used in semiconductor manufacturing. The system is composed of two independent power inductors, fed at different frequencies, to achieve a homogeneous temperature profile along a graphite susceptor surface, crucial for enhancing layer quality and integrity. The optimization process considers both electrical (current magnitudes and frequencies) and geometrical parameters of the coils, which influence the power penetration and subsequent temperature distribution within the graphite disk. A two-step procedure based on deep neural networks (DNNs) is employed. The first step, namely optimal design, identifies the optimal operating frequencies and geometrical parameters of the two coils. The second step, namely optimal control, determines the optimal current magnitudes. The DNNs are trained using a database generated through finite element (FE) analysis. This deep learning-based cascade approach reduces computational time and multiphysics simulations compared to classical methods by reducing the dimensionality of parameter mapping. Therefore, the proposed method proves to be effective in solving high-dimensional multiphysics inverse problems. From the application point of view, achieving thermal uniformity (±7% fluctuation at 1100 °C) improves layer quality, increases efficiency, and reduces operating costs of epitaxy reactors. Full article

Two crystals of N,N′-bis(phosphonomethyl)-1,4,5,8-naphthalenediimide were grown in the presence of neutral (water) and charged (imidazolium cation) species, yielding [(H₂O₃P)CH₂-(C₁₄H₄N₂O₄)-CH₂(PO₃H₂)]∙H₂O (1) and [C₃H₅N₂][(H_1.5O₃P)CH₂-(C₁₄H₄N₂O₄)-CH₂(PO₃H_1.5)] (2), respectively. The ligand N,N′-bis(phosphonomethyl)-1,4,5,8-naphthalenediimide was synthesized via the condensation of naphthalene-1,4,5,8-tetracarboxylic dianhydride with (aminomethyl)phosphonic acid in N,N′-dimethylformamide or imidazole. The flexible N-methyl phosphonic acid groups adopt a cis configuration in compound 1 and a trans configuration in compound 2. In compound 1, the phosphonate groups engage in extensive hydrogen bonding, as well as with water molecules and π–π stacking, resulting in a three-dimensional closely packed structure. Compound 2 forms a densely packed three-dimensional network stabilized by charge-assisted hydrogen bonding (anion-cation), anion–π interactions, and π–π stacking interactions. Hirshfeld surface analysis was conducted and the associated two-dimensional fingerprint plots were generated to further elucidate the nature and contributions of these noncovalent interactions. Direct bandgap measurements estimated from Tauc plots yielded values of 2.92 eV and 2.85 eV for compounds 1 and 2, respectively, highlighting their potential as promising n-type organic semiconductors. Thermal analysis reveals that compound 2 exhibits greater thermal stability than compound 1. Full article

For advanced semiconductor nodes, the demand for high-precision patterning of complex foundry circuits drives the widespread use of Lithography-Etch-Lithography-Etch (LELE)—a key Multiple Patterning Technology (MPT)—in Deep Ultraviolet (DUV) processes. However, the interaction between LELE’s two Lithography-Etch (LE) cycles makes it very challenging to build a model for etching contour simulation and hotspot detection. This study presents an Artificial Intelligence (AI)-assisted composite etch model to capture inter-LE interactions, which directly outputs the final post-LELE etch contour, enabling Etch Rule Check (ERC)-based simulation detection of After Etch Inspection (AEI) hotspots. In addition, the etch model proposed in this study can also predict the etch bias of different types of pattern (especially complex two-dimensional (2D) patterns), thereby enabling auto retargeting for After Develop Inspection (ADI) target generation. In the future, the framework of this composite model can be adapted to the Self-Aligned Reverse Patterning (SARP) + Cut process to address more complex MPT challenges. Full article

Biosensing technology serves as a cornerstone in biomedical diagnostics, environmental monitoring, personalized medicine, and wearable devices, playing an indispensable role in precise detection and real–time monitoring. Compared with traditional sensing platforms, functional nanomaterials—by virtue of their ultra–large specific surface area, exceptional optoelectronic properties, and superior catalytic activity—significantly enhance the sensitivity, selectivity, and response speed of biosensors. This has enabled ultrasensitive, rapid, and even in situ detection of disease biomarkers, pollutants, and pathogens. This review summarizes recent advances in five key categories of functional nanomaterials—metallic, semiconductor, carbon–based, two–dimensional, and stimulus–responsive materials—for advanced biosensing applications. It elucidates the structure–property relationships governing sensing performance, such as the surface plasmon resonance of gold nanoparticles and the high carrier mobility of graphene, and analyzes the core mechanisms behind optical sensing, electrochemical sensing, and emerging multimodal sensing strategies. With a focus on medical diagnostics, wearable health monitoring, and environmental and food safety surveillance, the review highlights the application value of functional nanomaterials across diverse scenarios. Current research is progressively moving beyond single–performance optimization toward intelligent design, multifunctional integration, and real–world deployment, though challenges related to industrial application remain. Finally, the review outlines existing issues in the development of functional nanomaterial–based biosensors and offers perspectives on the integration of nanomaterials with cutting–edge technologies and the construction of novel sensing systems. This work aims to provide insights for the rational design of functional nanomaterials and the cross–disciplinary translation of biosensing technologies. Full article

Constructing two-dimensional (2D) novel materials using superatoms as building blocks is currently a highly promising research field. In this study, by employing an oxidation strategy and based on first-principles calculations, we successfully predicted two types of 2D borides, namely B₁₂X₂H₆ (X=O, S), with icosahedral B₁₂ serving as their core structural unit. Ab initio molecular dynamics simulations demonstrated that these two borides exhibit exceptionally high structural stability, retaining their original structural characteristics even under extreme temperature conditions as high as 2200 K. Electronic structure calculations revealed that B₁₂O₂H₆ and B₁₂S₂H₆ are both wide-bandgap indirect semiconductors, with bandgap widths reaching 4.92 eV and 5.25 eV, respectively. Analysis via deformation potential theory showed that the phonon-limited carrier mobilities of B₁₂X₂H₆ can reach up to 1469 cm²V⁻¹s⁻¹ (for B₁₂O₂H₆) and 635 cm²V⁻¹s⁻¹ (for B₁₂S₂H₆). Notably, the surfaces of B₁₂X₂H₆ demonstrate excellent migration performance for alkali metal ions, with migration barriers as low as 0.15 eV (for B₁₂O₂H₆) and 0.033 eV (for B₁₂S₂H₆). This study not only expands the family of 2D materials based on B₁₂ superatoms but also provides a solid theoretical foundation for the potential application of B₁₂X₂H₆ in the field of low-dimensional materials. Full article

Polymeric semiconductors have rapidly evolved from early conductive polymers, such as polyacetylene, to high-performance donor–acceptor copolymers, offering a unique combination of mechanical flexibility, solution processability, and tunable optoelectronic properties. These advancements have positioned polymeric semiconductors as versatile materials for next-generation electronics, including wearable, stretchable, and bio-integrated devices, IoT systems, and soft robotics. In this review, we systematically present the fundamental principles of polymeric semiconductors, including electronic structure, charge transport mechanisms, molecular packing, and solid-state morphology, and elucidate how these factors collectively govern device performance. We further discuss recent advances in synthesis strategies, thin-film processing techniques, molecular doping, and interface engineering, emphasizing their critical roles in improving operational stability, charge-carrier mobility, and energy efficiency. Key applications—such as organic photovoltaics, field-effect transistors, neuromorphic devices, and memristors—are analyzed, with a focus on the intricate structure–property–performance relationships that dictate functionality. Finally, we highlight emerging directions and scientific innovations, including sustainable and degradable polymers, hybrid and two-dimensional polymer systems, and novel strategies to enhance device stability and performance. By integrating fundamental polymer science with device engineering, this review provides a comprehensive, structured, and forward-looking perspective, identifying knowledge gaps and offering insights to guide future breakthroughs and the rational design of high-performance, multifunctional, and environmentally responsible polymeric electronic devices. Full article

This work investigates the application of HfZrO ferroelectric material for the tuning of high-frequency bandpass filters. By integrating HfZrO with a two-dimensional HfSe semiconductor to form a heterostructure, the device achieves wideband tunability with low power requirements. Under a bias of ±4 V, the bandpass filter demonstrates a 3.4 GHz tuning range—from 7.8 GHz to 11.2 GHz—corresponding to a fractional tunability of approximately 43% in the X-band. The insertion loss remains below −1.8 dB across the tuning window, indicating low-loss operation. These results highlight the potential of the HfZrO/HfSe heterostructure as a promising platform for energy-efficient, CMOS-compatible, high-frequency tunable devices. Full article

Wide-Bandgap (WBG) semiconductors—silicon carbide (SiC) and gallium nitride (GaN)— enable high-power-density conversion, but performance is limited by where heat is generated and how it is removed. This review links device-level loss mechanisms (conduction and switching, including output-capacitance hysteresis and dynamic on-resistance) to structure-driven hot spots within the ultra-thin (tens of nanometers) two-dimensional electron gas (2DEG) channel of GaN HEMTs and to thermal boundary resistance at layer interfaces. We compare wire-bondless package concepts—double-sided cooling, embedded packaging, and interleaved planar layouts—and survey system-level cooling that shortens the conduction path and raises heat-transfer coefficients. The impact on reliability is discussed using temperature-sensitive electrical parameters (e.g., on-state VDS, threshold voltage, drain leakage, di/dt, and gate current) for real-time junction-temperature estimation and compact electro-thermal RC models for remaining-useful-life prediction. Evidence from recent literature points to interface resistance in GaN-on-SiC as a primary bottleneck, while near-junction cooling and advanced packages are effective mitigations. We argue for integrated co-design—devices, packaging, electromagnetic interference (EMI)-aware layout, and cooling—together with interface engineering and health monitoring to deliver reliable, high-density WBG systems. Full article

We study stochastic production planning in capacity-constrained manufacturing systems, where feasible operating states are restricted to a convex safe-operating region. The objective is to minimize the total cost that combines a quadratic production effort with an inventory holding cost, while automatically halting production when the state leaves the safe region. We derive the associated Hamilton–Jacobi–Bellman (HJB) equation, establish the existence and uniqueness of the value function under broad conditions, and prove a concavity property of the transformed value function that yields a robust gradient-based optimal feedback policy. From an operations perspective, the stopping mechanism encodes hard capacity and safety limits, ensuring bounded risk and finite expected costs. We complement the analysis with numerical methods based on finite differences and illustrate how the resulting policies inform real-time decisions through two application-inspired examples: a single-product case calibrated with typical process-industry parameters and a two-dimensional example motivated by semiconductor fabrication, where interacting production variables must satisfy joint safety constraints. The results bridge rigorous stochastic control with practical production planning and provide actionable guidance for operating under uncertainty and capacity limits. Full article

Motivated by the seminal discoveries in graphene, the exploration of novel physical phenomena in alternative two-dimensional (2D) materials has attracted tremendous attention. In this work, through theoretical investigation using first-principles calculations, we reveal that Mo-intercalated ${\mathrm{CrI}}_3$ bilayer exhibits ferromagnetic semiconductor behavior with a small easy-plane magnetocrystalline anisotropy energy (MAE) of 0.618 meV/Cr(Mo) between (100) and (001) magnetizations. The spin–orbit coupling (SOC) opens a narrow band gap at the Fermi level for both magnetization orientations with nonzero Chern number for realizing the quantum anomalous Hall effect (QAHE) in the former and with trivial topology in the latter. The small MAE implies the efficient experimental manipulation of magnetization between distinct topologies through an external magnetic field. Our findings provide compelling evidence that the QAHE in this system originates from the quantum spin Hall effect (QSHE), driven by intrinsic magnetism under broken time-reversal symmetry. These unique properties position Mo-intercalated ${\mathrm{CrI}}_3$ as a promising candidate for tunable spintronic applications. Full article

In this study, the effects of switching on the two-dimensional electron gas (2-DEG) channel in an E-mode GaN-on-Si HEMT are investigated using a GS-065-004-1-L device that is commercially available for educational practice. A practical prototype with a reduced number of components is proposed, with empirical concepts used to explain its predictive performance when a coreless transformer is series-connected to the E-mode GaN-on-Si HEMT for switching-mode conduction. Conduction modes arising at the p-GaN/n-AlGaN/i-GaN heterojunction in accordance with specifications from the manufacturer’s datasheet were validated using a didactic physical-based model dependent on semiconductor parameters of gallium nitride (GaN). Test circuit-examined waveforms were analyzed, which confirmed that the switching conduction mode of the 2-DEG channel is dependent on physical parameters such as switching operating frequency, temperature, low-field electron mobility, and space charge capacitance. Full article

The thickness of the LPCVD-Si₃N₄ gate dielectric layer significantly influences the electron transport properties of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), but the mechanism by which it affects polarization Coulomb field (PCF) scattering remains largely unexplored. In this study, AlGaN/GaN MIS-HEMTs with LPCVD-Si₃N₄ gate dielectric thicknesses of 0 nm, 5 nm, and 20 nm were fabricated, and the influence of LPCVD-Si₃N₄ thickness on PCF scattering was systematically investigated. Through electrical measurements and theoretical calculations, the relationship between LPCVD-Si₃N₄ gate dielectric layer thickness, additional polarization charge (∆ρ), two-dimensional electron gas (2DEG) density, and 2DEG mobility was analyzed. The results show that increasing the LPCVD-Si₃N₄ thickness reduces the vertical electric field in the AlGaN barrier, weakening the inverse piezoelectric effect (IPE) and reducing ∆ρ. Further analysis reveals that the ∆ρ exhibits a non-monotonic dependence on negative gate voltage, initially increasing and subsequently decreasing, due to the competition between strain accumulation and stress relaxation. Meanwhile, the 2DEG mobility limited by PCF (μ_PCF) decreases monotonically with increasing negative gate voltage, mainly due to the progressive weakening of the 2DEG screening effect. The research results reveal the physical mechanism by which LPCVD-Si₃N₄ thickness regulates PCF scattering, providing theoretical guidance for optimizing gate dielectric parameters and enhancing the performance of AlGaN/GaN MIS-HEMTs. Full article

In advanced manufacturing, nanotechnology, and aerospace fields, the demand for precision is increasing. Driven by this demand, multi-degree-of-freedom grating encoders have become particularly crucial in high-precision displacement and angle measurement. Over the years, these encoders have evolved from one-dimensional systems to complex multi-degree-of-freedom measurement solutions that can achieve real-time synchronization. There can also be high-resolution feedback. Its structure is relatively compact, the signal output is also very stable, and the integration degree is high. This gives it a significant advantage in complex measurement tasks. Recently, there have been new developments. The functions of grating encoders in terms of principle, system architecture, error modeling, and signal processing strategies have all been expanded. For instance, accuracy can be improved by integrating multiple reading-heads, while innovative strategies such as error decoupling and robustness enhancement have further advanced system performance. This article will focus on the development of two-dimensional, three-dimensional and multi-degree-of-freedom grating encoders, exploring how the measurement degrees of freedom have evolved, and emphasizing key developments in spatial decoupling, error compensation and system integration. At the same time, it will also discuss some challenges, such as error coupling, system stability and intelligent algorithms for integrating real-time error correction. The future of grating encoders holds great potential. Their applications in precision control, semiconductor calibration, calibration systems, and next-generation intelligent manufacturing technologies can bring promising progress to both industrial and scientific fields. Full article