Search Results (494)

Silver nanowire (AgNW)-based transparent conductive films are essential for flexible electronics due to their superior optoelectronic properties and mechanical flexibility. This review examines the characteristics and fabrication methods of AgNW thin films in detail. Among various fabrication techniques, the AgNW thin film produced by silk-screen printing exhibits the highest quality factor of 568.47, achieving 95.3% visible light transmittance of 95.3% and 13.6 Ω/sq sheet resistance. Ensuring the stability of AgNW films requires the deposition of protective layers through physical or chemical approaches. This review also systematically evaluates the different methods for preparing these protective layers, including their respective advantages and limitations. Furthermore, the review proposes strategies to enhance the conductivity, transparency, and flexibility of AgNW films. Finally, it discusses potential future applications and challenges, offering valuable insights for the development of next-generation flexible transparent electrodes. Full article

There is considerable interest in broadband nanomaterials, particularly transparent semiconductor oxides, within both fundamental research and technological applications. Historically, it has been considered that the variation in dopant concentration during the synthesis of semiconductor materials is a crucial factor in activating and/or modulating the optical and structural properties, particularly the bandgap and the parameters of the unit cell, of semiconductor oxides. Recently, tin oxide has emerged as a key material due to its excellent structural properties, optical transparency, and various promising applications in optoelectronics. This study utilized the ultrasonic spray pyrolysis technique to synthesize aluminum-doped tin oxide (ATO) thin films on quartz and polished single-crystal silicon substrates. The impact of varying aluminum doping levels (0, 2, 5, and 10 at. %) on morphology and structural and optical properties was examined. The ATO thin films were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmittance spectroscopy. SEM images demonstrated a slight reduction in the size of ATO nanoparticles as the aluminum doping concentration increased. XRD analysis revealed a tetragonal crystalline structure with the space group P42/mnm, and a shift in the XRD peaks to higher angles was noted with increasing aluminum content, indicating a decrease in the crystalline lattice parameters of ATO. The transmittance of the ATO films varied between 75% and 85%. By employing the transmittance spectra and the established Tauc formula the optical bandgap values of ATO films were calculated, showing an increase in the bandgap with higher doping levels. These findings were thoroughly analyzed and discussed; additionally, an effort was made to clarify the contradictory analyses present in the literature and to identify a doping range that avoids the onset of a secondary phase. Full article

In this study, zinc–tin oxide (ZTO) thin films were prepared via radio-frequency magnetron sputtering to examine the influence of annealing temperature on the performance of thin-film transistors (TFTs) and their resistive-load inverters. The findings reveal that annealing modulates the concentration and spatial distribution of oxygen vacancies (V_O), which directly affect carrier density and interface trap density, ultimately determining the electrical behavior of inverters. At the optimal annealing temperature of 600 °C, the V_O concentration was effectively moderated, resulting in a TFT with a mobility of 12.39 cm² V⁻¹ s⁻¹, a threshold voltage of 6.13 V, an on/off current ratio of 1.09 × 10⁸, and a voltage gain of 11.77 in the corresponding inverter. However, when the V_O concentration deviated from this optimal range, whether in excess or deficiency, the gain was reduced and power consumption increased. This V_O engineering strategy enables the simultaneous optimization of both TFT and inverter performance without relying on rare elements, offering a promising pathway toward the development of low-cost, large-area, flexible, and transparent electronic devices. Full article

Se-doped CdTe thin films were grown employing a simple two-electrode electrochemical deposition method using glass/tin-doped indium oxide (glass/ITO). Cadmium acetate dihydrate [Cd (CH₃CO₂)₂. 2H₂O], selenium dioxide (SeO₂), and tellurium dioxide (TeO₂) were used as precursors. Instruments including X-ray diffraction for structural investigation, UV-Vis spectrophotometry for optical properties, and scanning probe microscopy for morphological properties were employed to investigate the physico-chemical characteristics of the resulting Se-doped CdTe thin-film. The films are polycrystalline with a cubic phase, according to X-ray diffraction (XRD) data. More ions are deposited on the substrate, which makes the material more crystalline and intensifies the characteristic peaks that are seen. It is observed from the acquired optical characterization that the film’s bandgap is greatly influenced by the deposition time. The bandgap dropped from 1.92 to 1.62 as the deposition period increased from 25 to 45 min, making the film more transparent and absorbing less light at shorter deposition durations. Images from scanning electron microscopy (SEM) show that the surface morphology is homogenous with closely packed grains and that the grain forms become less noticeable as the deposition time increases. This work is novel in that it investigates the influence of the deposition time on the structural, optical, and morphological properties of Se-doped CdTe thin films deposited using a cost-effective, simplified two-electrode electrochemical method—a fabrication route that remains largely unexplored for this material system. Full article

Nickel (Ni) ultrathin films exhibit phase-dependent electrical, magnetic, and optical characteristics that are significantly influenced by deposition methods. However, these films are inherently prone to rapid oxidation, with the oxidation rate dependent on substrate, temperature, and deposition parameters. The focus of this research is to investigate the temporal oxidation of RF-sputtered Ni ultrathin films on Corning glass under ambient atmospheric conditions and its impact on their structural, surface, and optical characteristics. Controlled film thicknesses were achieved through precise manipulation of deposition parameters, enabling the analysis of oxidation-induced modifications. Atomic force microscopy (AFM) revealed that films with high structural integrity and surface uniformity are exhibiting roughness values (Rq) from 0.679 to 4.379 nm of corresponding thicknesses ranging from 4 to 85 nm. Scanning electron microscopy (SEM) validated the formation of Ni grains interspersed with NiO phases, facilitating SPR-like effects. UV-visible spectroscopy is demonstrating thickness-dependent spectral (plasmonic peak) shifts. Finite Difference Time Domain (FDTD) simulations corroborate the observed thickness-dependent optical absorbance and the resultant shifts in the absorbance-induced plasmonic peak position and bandgap. Increased NiO presence primarily drives the enhancement of electromagnetic (EM) field localization and the direct impact on power absorption efficiency, which are modulated by the tunability of the plasmonic peak position. Our work demonstrates that controlled fabrication conditions and optimal film thickness selection allow for accurate manipulation of the Ni oxidation process, significantly altering their optical properties. This enables the tailoring of these Ni films for applications in transparent conductive electrodes (TCEs), magneto-optic (MO) devices, spintronics, wear-resistant coatings, microelectronics, and photonics. Full article

Electrochromic devices have garnered significant interest owing to their promising applications in smart multifunctional electrochromic energy storage systems (EESDs) and their emerging next-generation electronic technologies. Tungsten oxide (WO₃), possessing both electrochromic and pseudocapacitive characteristics, offers great potential for developing multifunctional devices with enhanced performance. However, achieving an efficient and straightforward synthesis of WO₃ electrochromic films, while simultaneously ensuring high coloration efficiency and energy storage capability, remains a significant challenge. In this work, a low-temperature hydrothermal approach is employed to directly grow hexagonal-phase WO₃ films on FTO substrates. This process utilizes sorbitol to promote nucleation and rubidium sulfate to regulate crystal growth, enabling a one-step in situ fabrication strategy. To complement the high-performance WO₃ cathode, a composite PB/SnO₂ film was designed as the anode, offering improved electrochromic properties and enhanced stability. The assembled EESD exhibited fast bleaching/coloration response and a high coloration efficiency of 101.2 cm² C⁻¹. Furthermore, it exhibited a clear and reversible change in optical properties, shifting from a transparent state to a deep blue color, with a transmittance modulation reaching 81.47%. Full article

This article analyzes the reactive magnetron sputtering process, using a two-element Zn-Al target, for depositing aluminum-doped zinc oxide (AZO) layers, aimed at transparent electronics. AZO films were deposited on Corning 7059 glass, flexible Corning Willow^® glass and amorphous silica substrates. To optimize the process, the study examined the target surface state across varying argon/oxygen ratios. The gas mixture significantly influenced the Al/Zn atomic ratio in the films, affecting their structural, optical and electrical performance. Films deposited at 80/20 argon/oxygen ratio—near the dielectric mode—showed high light transmission (84%) but high resistivity (47.4·10⁻³ Ω·cm). Films deposited at ratio of 84/16—close to metallic mode—exhibited lower resistivity (1.9·10⁻³ Ω·cm) but reduced light transmission (65%). The best balance was achieved with an 82/18 ratio, yielding high light transmission (83%) and low resistivity (1.4·10⁻³ Ω·cm). These findings highlight the critical role of sputtering atmosphere in tailoring AZO layer properties for use in transparent electronics. Full article

This study developed a transparent NO₂ gas sensor with enhanced sensing performance and high optical transmittance. Al-doped ZnO thin films were deposited by atomic layer deposition, which was chosen for its capability to precisely control surface chemistry at the atomic scale. Oxygen vacancies were effectively introduced by utilizing trimethylaluminum, a strongly reducing Al₂O₃ precursor, thereby increasing carrier concentration and enhancing gas-sensing performance. By adjusting the Al doping level, the optimized device achieved a 50 °C reduction in operating temperature, a 66.2-fold increase in sensitivity at 150 °C, and shortened response and recovery times. The morphology, crystallinity, and elemental distribution were analyzed using transmission electron microscopy, selected area electron diffraction, and energy-dispersive X-ray spectroscopy, while chemical bonding states were investigated via X-ray photoelectron spectroscopy. Optical properties were characterized using UV–visible spectroscopy, confirming an average transmittance of approximately 80% in the visible range. These results demonstrate the promise of transparent oxide gas sensors for integration into next-generation electronics and Internet of Things-based environmental monitoring systems. Full article

The rising demand for sustainable energy solutions has spurred the development of advanced materials for photovoltaic devices. Among these, transparent conductive oxides (TCOs) play a pivotal role in enhancing device efficiency, particularly in silicon-based solar cells. However, the reliance on indium-based TCOs like ITO raises concerns over cost and material scarcity, prompting the search for more abundant and scalable alternatives. This study focuses on the fabrication and characterization of aluminum-doped zinc oxide (ZnO:Al, AZO) thin films deposited via Atomic Layer Deposition (ALD), targeting their application as transparent conductive oxides in silicon solar cells. The ZnO:Al thin films were synthesized by alternating supercycles of ZnO and Al₂O₃ depositions at 225 °C, allowing precise control of composition and thickness. Structural, optical, and electrical properties were assessed using Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), Raman spectroscopy, spectroscopic ellipsometry, and four-point probe measurements. The results confirmed the formation of uniform, crack-free ZnO:Al thin films with a spinel-type ZnAl₂O₄ crystalline structure. Optical analyses revealed high transparency (more than 80%) and tunable refractive indices (1.64 ÷ 1.74); the energy band gap was 2.6 ÷ 3.07 eV, while electrical measurements demonstrated low sheet resistance values, reaching 85 Ω/□ for thicker films. This combination of optical and electrical properties underscores the potential of ALD-grown AZO thin films to meet the stringent demands of next-generation photovoltaics. Integration of Zn:Al thin films into silicon solar cells led to an optimized photovoltaic performance, with the best cell achieving a short-circuit current density of 36.0 mA/cm² and a power conversion efficiency of 15.3%. Overall, this work highlights the technological relevance of ZnO:Al thin films as a sustainable and cost-effective alternative to conventional TCOs, offering pathways toward more accessible and efficient solar energy solutions. Full article

In this paper, we design an ultra-thin broadband transparent absorber based on indium tin oxide (ITO) film, and we choose polymethyl methacrylate (PMMA) high-transmittance dielectric sheet instead of the traditional dielectric sheet and polyethylene glycol terephthalate (PET) as the ITO film substrate. Simulation results indicate that the absorber achieves more than 90% absorption for positively incident electromagnetic waves in the broadband range of 5–21.15 GHz with a fractional bandwidth (FBW) of 123.5% and a thickness of 6.3 mm (0.105 λ_L, where λ_L is the wavelength at the lowest frequency). Meanwhile, this paper introduces the interference theory to explain the broadband absorption mechanism of the absorber, which makes up for the defect that the equivalent circuit model (ECM) method cannot analyze the oblique incidence electromagnetic wave. This paper also compares the HFSS simulation results, ECM theoretical values, and interference theoretical values under positively incident electromagnetic waves to clarify the advantages of interference theory in the design of wave absorbers. Full article

This study systematically investigates the effects of repeated Kurome treatment—a physical modification method combining mechanical stirring and oxidative regulation—on the processing characteristics and film properties of Chinese lacquer (urushi). By subjecting raw lacquer to 1–4 cycles of hydration–dehydration (KL1–KL4), the researchers observed a significant increase in viscosity (from 12,688 to 16,468 mPa·s) and a dramatic reduction in curing time (from 74 h to just 3.6 h), driven by deep oxidation of urushiol and quinone-mediated crosslinking, as confirmed by FTIR spectroscopy. The Kurome treatment enabled controlled darkening (L* value decreased from 29.31 to 26.89) while maintaining stable hue and gloss (88.96–90.96 GU), with no adverse effects on abrasion resistance (mass loss of 0.126–0.150 g/100 r) or adhesion (9.58–9.75 MPa). The reduced transparency of the KL3/KL4 films is associated with a densified polymer network, a feature that may benefit protective coatings. Scanning electron microscopy (SEM) analysis confirmed the formation of uniform, defect-free surfaces across all treatment groups. Among them, the KL2 group (viscosity of 14,630 mPa·s, curing time of 9.2 h) exhibited the most favorable balance for industrial applications. This study establishes Kurome technology as a low-carbon, additive-free strategy that enhances the processability of Chinese lacquer while preserving its traditional craftsmanship standards, offering scientific support for its sustainable use in modern coatings and cultural heritage conservation. Full article

Using multi-power supply units to power large-area electrothermal films can achieve high electrothermal power under low voltage. However, this method may result in poor contact between the electrodes and the electrothermal film, especially for films with large areas and curved surfaces, as well as for power supply units with small electrode spacing. This study found that the relative deviation between the measured value (R_M) and the theoretical value (R_P) of the parallel resistance, ${\displaystyle \frac{R_M-R_P}{R_P}}$, exceeds 12.8% when powering a planar Indium Tin Oxide (ITO) electrothermal film with an area of 5 cm × 5 cm and electrode spacing of less than 0.5 cm using four or more power supply units. This deviation is significantly higher than that observed for power supply units with electrode spacing ≥0.8 cm, where ${\displaystyle \frac{R_M-R_P}{R_P}}$ is 1.4% and 0.3% for spacings of 0.8 cm and 1.1 cm, respectively. By using fine sand, springs, and airbags as power supply pedestals, close contact between the electrodes and the electrothermal film can be achieved for large-area and curved-surface films due to the deformation of the sand, springs, or airbags under the heater’s weight. When an airbag power supply pedestal with twelve power supply units is used to power the bottom of an electrothermal ceramic teacup with a 20 cm² curved ITO transparent electrothermal film, the ${\displaystyle \frac{R_M-R_P}{R_P}}$ is 13.3% and the heating temperature reaches 83.1 °C. Full article

We report the photocatalytic (PC) response of titanium oxide (TiO_x) films grown by reactive DC magnetron sputtering under oblique-angle-deposition (OAD) and subjected to post-deposition flash-lamp-annealing (FLA). Under ballistic growth conditions, OAD yields TiO_x films with either compact or inclined columnar structure as the deposition incidence angle (α) with respect to the substrate normal varies from zero to grazing. On the one hand, films produced for α ≤ 45° display a compact and opaque structure comprising the formation of nanocrystalline cubic titanium monoxide (c-TiO) phase. On the other hand, films grown at larger α (≥60°) display tilted columns with amorphous structure, yielding highly porous films and an increased transparency for α > 75°. For TiO_x films grown at large α, FLA induces phase transformation to nanocrystalline anatase from the amorphous state. In contrast to as-grown samples, FLA samples display PC activity as assessed by bleaching of methyl orange dye. The best PC performance is attained for an intermediate situation (α = 60–75°) between compact and columnar structures. The obtained photoactivity is discussed in terms of the different microstructures obtained by OAD and posterior phase formation upon FLA. Full article

Copper nanowires (Cu NWs) are considered a promising alternative to indium tin oxide (ITO) and silver nanowires (Ag NWs) due to their excellent electrical conductivity, mechanical properties, abundant reserves, and low cost. They have been widely applied in various optoelectronic devices. In this study, Cu NWs were synthesized using copper chloride (CuCl₂) as the precursor, monoethanolamine (MEA) as the complexing agent, and hydrated hydrazine (N₂H₄) as the reducing agent under strongly alkaline conditions at 60 °C. Notably, this is the first time that MEA has been employed as a complexing agent in this synthesis method for Cu NWs. Through a series of experiments, the optimal conditions for the CuCl₂–MEA–N₂H₄ system in Cu NWs synthesis were determined. This study revealed that the presence of amines plays a crucial role in nanowire formation, as the co-ordination of MEA with copper in this system provides selectivity for the nanowire growth direction. MEA prevents the excessive conversion of Cu(I) complexes into Cu₂O octahedral precipitates and exhibits an adsorption effect during Cu NWs formation. The different adsorption tendencies of MEA at the nanowire ends and lateral surfaces, depending on its concentration, influence the growth of the Cu NWs, as directly reflected by changes in their diameter and length. At an MEA concentration of 210 mM, the synthesized Cu NWs have an average diameter of approximately 101 nm and a length of about 28 μm. To fabricate transparent conductive films, the Cu NW network was transferred onto a polyethylene terephthalate (PET) substrate by applying a pressure of 20 MPa using a tablet press to ensure strong adhesion between the Cu NW-coated mixed cellulose ester (MCE) filter membrane and the PET substrate. Subsequently, the MCE membrane was dissolved by acetone and isopropanol immersion. The resulting Cu NW transparent conductive film exhibited a sheet resistance of 52 Ω sq⁻¹ with an optical transmittance of 86.7%. Full article

Carbon dioxide-based copolymers such as polypropylene carbonate (PPC) can offer the double environmental benefit of capturing CO₂ and replacing oil-based raw materials in the plastics industry with renewable ones. However, their production at an industrial level is still limited by the range of applications in which their physicochemical properties are competitive and ideally surpass those of fossil-based polymeric commodities. This work introduces PPC materials with high-stretch and self-healing properties that were prepared by copolymerization of CO₂ and propylene oxide using tailored Zn glutarate catalysts. The PPC materials were analyzed in terms of composition, molecular weight, thermal and mechanical behavior, particularly focusing on their tensile properties, strain recovery, creep response, and self-healing ability. All the prepared PPC materials showed good ductility and self-healing properties. The most promising ones achieved excellent and fast recovery of extremely high elongations (>700%), still reaching remarkable values (>600%) after proper self-healing. These high-stretch and self-healing PPC materials are completely amorphous, present good optical transparency, and can be processed using techniques normally used for other thermoplastics. Therefore, they are promising for a variety of applications, including shrink films and self-healing packaging, thus providing new, valuable perspectives for the industrialization of these CO₂-based polymers. Full article