Search Results (58)

This paper presents a novel silicon-based piezoresistive pressure sensor composed of a silicon layer with sensing elements and a glass cover for hermetic packaging. Unlike conventional designs, this study employs numerical simulation to analyze the influence of varying roughness levels of the sensitive membrane on the sensor’s output response. Simulation results demonstrate that pressure sensors with smoother sensitive membranes exhibit superior performance in terms of sensitivity (5.07 mV/V/MPa), linearity (0.67% FS), hysteresis (0.88% FS), and repeatability (0.75% FS). Furthermore, an optimized process for controlling membrane roughness was achieved by adjusting the concentration of the etchant solution. Experimental results reveal that a membrane roughness of 35.37 nm was attained under conditions of 80 °C and 25 wt% TMAH. Additionally, the fabrication process of this piezoresistive pressure sensor was significantly simplified and cost-effective due to the adoption of a backside wet etching technique. The fabricated sensor demonstrates excellent performance metrics, including a sensitivity of 5.07 mV/V/MPa, a full-scale (FS) output of 101.42 mV, a hysteresis of 0.88% FS, a repeatability of 0.75% FS, and a nonlinearity of 0.67% FS. These results indicate that the proposed sensor is a promising tool for precise pressure measurement applications, offering both high performance and cost efficiency. This study not only advances the understanding of the impact of membrane roughness on sensor performance but also provides a practical and scalable fabrication approach for piezoresistive pressure sensors. Full article

The development of low-temperature piezoresistive materials provides compatibility with standard silicon-based MEMS fabrication processes. Additionally, it enables the use of such material in flexible substrates, thereby expanding the potential for various device applications. This work demonstrates, for the first time, the fabrication of a 200 nm polycrystalline silicon thin film through a metal-induced crystallization process mediated by an AlSiCu alloy at temperatures as low as 450 °C on top of silicon and polyimide (PI) substrates. The resulting polycrystalline film structure exhibits crystallites with a size of approximately 58 nm, forming polysilicon (poly-Si) grains with diameters between 1–3 µm for Si substrates and 3–7 µm for flexible PI substrates. The mechanical and electrical properties of the poly-Si were experimentally conducted using microfabricated test structures containing piezoresistors formed by poly-Si with different dimensions. The poly-Si material reveals a longitudinal gauge factor (GF) of 12.31 and a transversal GF of −4.90, evaluated using a four-point bending setup. Additionally, the material has a linear temperature coefficient of resistance (TCR) of −2471 ppm/°C. These results illustrate the potential of using this low-temperature film for pressure, force, or temperature sensors. The developed film also demonstrated sensitivity to light, indicating that the developed material can also be explored in photo-sensitive applications. Full article

In order to meet the better performance requirements of pressure detection, a microelectromechanical system (MEMS) piezoresistive pressure sensor utilizing an array-type aluminum–silicon hybrid structure with high sensitivity and low temperature drift is designed, fabricated, and characterized. Each element of the 3 × 3 sensor array has one stress-sensitive aluminum–silicon hybrid structure on the strain membrane for measuring pressure and another temperature-dependent structure outside the strain membrane for measuring temperature and temperature drift compensation. Finite-element numerical simulation has been adopted to verify that the array-type pressure sensor has an enhanced piezoresistive effect and high sensitivity, and then this sensor is fabricated based on the standard MEMS process. In order to further reduce the temperature drift, a thermodynamic control system whose heating feedback temperature is measured by the temperature-dependent structure is adopted to keep the working temperature of the sensor constant by using the PID algorithm. The experiment test results show that the average sensitivity of the proposed sensor after temperature compensation reaches 0.25 mV/ (V kPa) in the range of 0–370 kPa, the average nonlinear error is about 1.7%, and the thermal sensitivity drift coefficient (TCS) is reduced to 0.0152%FS/°C when the ambient temperature ranges from −20 °C to 50 °C. The research results may provide a useful reference for the development of a high-performance MEMS array-type pressure sensor. Full article

Due to their high accuracy, excellent stability, minor size, and low cost, silicon piezoresistive pressure sensors are used to monitor downhole pressure under high-temperature, high-pressure conditions. However, due to silicon’s temperature sensitivity, high and very varied downhole temperatures cause a significant bias in pressure measurement by the pressure sensor. The temperature coefficients differ from manufacturer to manufacturer and even vary from batch to batch within the same manufacturer. To ensure high accuracy and long-term stability for downhole pressure monitoring at high temperatures, this study proposes a temperature compensation method based on bilinear interpolation for piezoresistive pressure sensors under downhole high-temperature and high-pressure environments. A number of calibrations were performed with high-temperature co-calibration equipment to obtain the individual temperature characteristics of each sensor. Through the calibration, it was found that the output of the tested pressure measurement system is positively linear with pressure at the same temperatures and nearly negatively linear with temperature at the same pressures, which serves as the bias correction for the subsequent bilinear interpolation temperature compensation method. Based on this result, after least squares fitting and interpolating, a bilinear interpolation approach was introduced to compensate for temperature-induced pressure bias, which is easier to implement in a microcontroller (MCU). The test results show that the proposed method significantly improves the overall measurement accuracy of the tested sensor from 21.2% F.S. to 0.1% F.S. In addition, it reduces the MCU computational complexity of the compensation model, meeting the high accuracy demand for downhole pressure monitoring at high temperatures and pressures. Full article

Small, low-power, and inexpensive marine depth sensors are of interest for a myriad of applications from maritime security to environmental monitoring. Recently, laser-induced graphene (LIG) piezoresistive pressure sensors have been proposed given their rapid fabrication and large dynamic range. In this work, the practicality of LIG integration into fieldable deep ocean (1 km) depth sensors in bulk is explored. Initially, a design of experiments (DOEs) approach evaluated laser engraver fabrication parameters such as line length, line width, laser speed, and laser power on resultant resistances of LIG traces. Next, uniaxial compression and thermal testing at relevant ocean pressures up to 10.3 MPa and temperatures between 0 and 25 °C evaluated the piezoresistive response of replicate sensors and determined the individual characterization of each, which is necessary. Additionally, bare LIG sensors showed larger resistance changes with temperature (ΔR ≈ 30 kΩ) than pressure (ΔR ≈ 1–15 kΩ), indicating that conformal coatings are required to both thermally insulate and electrically isolate traces from surrounding seawater. Sensors encapsulated with two dip-coated layers of 5 wt% polydimethylsiloxane (PDMS) silicone and submerged in water baths from 0 to 25 °C showed significant thermal dampening (ΔR ≈ 0.3 kΩ), indicating a path forward for the continued development of LIG/PDMS composite structures. This work presents both the promises and limitations of LIG piezoresistive depth sensors and recommends further research to validate this platform for global deployment. Full article

MEMS capacitive pressure sensors have proven to be more reliable in terms of temperature drift and long-term stability when compared to MEMS piezoresistive pressure sensors. In this study, a MEMS capacitive pressure sensor using micromachined technology has been designed and fabricated. As the movable electrode, a silicon membrane is used, while the fixed electrode is a gold metal film on a glass substrate. There is no deformation of the silicon membrane when the pressure is equal on both sides. As a result of the pressure of 0 kPa applied to the silicon membrane, a capacitance exists between it and the metal electrode. Differences in pressure on both sides of the silicon membrane will cause the membrane to deform. Silicon membranes deform due to pressure differences, which affect the capacitance between metal electrodes and silicon membranes. MEMS capacitive pressure sensors benefit from the superior mechanical properties of silicon material compared to metal-based sensors. Capacitive MEMS sensors are more desirable for applications requiring high performance and stability as compared to metal pressure sensors. This device is suited to measuring blood pressure with a measurement range of 0–45 kPa. When applied pressure was 0 kPa, the measurement capacitance was 3.61 pF, and when 45 kPa was applied, it was 7.19 pF. Full article

In this paper, we propose a novel tactile sensor with a “fingerprint” design, named due to its spiral shape and dimensions of 3.80 mm × 3.80 mm. The sensor is duplicated in a four-by-four array containing 16 tactile sensors to form a “SkinCell” pad of approximately 45 mm by 29 mm. The SkinCell was fabricated using a custom-built microfabrication platform called the NeXus which contains additive deposition tools and several robotic systems. We used the NeXus’ six-degrees-of-freedom robotic platform with two different inkjet printers to deposit a conductive silver ink sensor electrode as well as the organic piezoresistive polymer PEDOT:PSS-Poly (3,4-ethylene dioxythiophene)-poly(styrene sulfonate) of our tactile sensor. Printing deposition profiles of 100-micron- and 250-micron-thick layers were measured using microscopy. The resulting structure was sintered in an oven and laminated. The lamination consisted of two different sensor sheets placed back-to-back to create a half-Wheatstone-bridge configuration, doubling the sensitivity and accomplishing temperature compensation. The resulting sensor array was then sandwiched between two layers of silicone elastomer that had protrusions and inner cavities to concentrate stresses and strains and increase the detection resolution. Furthermore, the tactile sensor was characterized under static and dynamic force loading. Over 180,000 cycles of indentation were conducted to establish its durability and repeatability. The results demonstrate that the SkinCell has an average spatial resolution of 0.827 mm, an average sensitivity of 0.328 $\mathsf{m}\mathsf{\Omega }/\mathsf{\Omega }/\mathsf{N}$, expressed as the change in resistance per force in Newtons, an average sensitivity of 1.795 µV/N at a loading pressure of 2.365 PSI, and a dynamic response time constant of 63 ms which make it suitable for both large area skins and fingertip human–robot interaction applications. Full article

This paper presents an ultra-small absolute pressure sensor with a silicon-micromachined TSV backside interconnection for high-performance, high spatial resolution contact pressure sensing, including flexible-substrate applications. By exploiting silicon-micromachined TSVs that are compatibly fabricated with the pressure sensor, the sensing signals are emitted from the chip backside, thereby eliminating the fragile leads on the front-side. Such a design achieves a flat and fully passivated top surface to protect the sensor from mechanical damage, for reliable direct-contact pressure sensing. A single-crystal silicon beam–island structure is designed to reduce the deflection of the pressure-sensing diaphragm and improve output linearity. Using our group-developed microholes interetch and sealing (MIS) micromachining technique, we fabricated ultra-small piezoresistive pressure sensors with the chip size as small as 0.4 mm × 0.6 mm, in which the polysilicon-micromachined TSVs transfer the signal interconnection from the front-side to the backside of the wafer, and the sensor chips can be densely packaged on the flexible substrate via the TSVs. The ultra-small pressure sensor has high sensitivity of 0.84 mV/kPa under 3.3 V of supply voltage and low nonlinearity of ±0.09% full scale (FS) in the measurement range of 120 kPa. The proposed pressure sensors with backside-interconnection TSVs hold promise for tactile sensing applications, including flexible sensing of wearable wristwatches. Full article

This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of −55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems. Full article

Due to material plastic deformation and current leakage at high temperatures, SOI (silicon-on-insulator) and SOS (silicon-on-sapphire) pressure sensors have difficulty working over 500 °C. Silicon carbide (SiC) is a promising sensor material to solve this problem because of its stable mechanical and electrical properties at high temperatures. However, SiC is difficult to process which hinders its application as a high-temperature pressure sensor. This study proposes a piezoresistive SiC pressure sensor fabrication method to overcome the difficulties in SiC processing, especially deep etching. The sensor was processed by a combination of ICP (inductive coupled plasma) dry etching, high-temperature rapid annealing and femtosecond laser deep etching. Static and dynamic calibration tests show that the accuracy error of the fabricated sensor can reach 0.33%FS, and the dynamic signal response time is 1.2 μs. High and low temperature test results show that the developed sensor is able to work at temperatures from −50 °C to 600 °C, which demonstrates the feasibility of the proposed sensor fabrication method. Full article

Flexible sensors have been extensively employed in wearable technologies for physiological monitoring given the technological advancement in recent years. Conventional sensors made of silicon or glass substrates may be limited by their rigid structures, bulkiness, and incapability for continuous monitoring of vital signs, such as blood pressure (BP). Two-dimensional (2D) nanomaterials have received considerable attention in the fabrication of flexible sensors due to their large surface-area-to-volume ratio, high electrical conductivity, cost effectiveness, flexibility, and light weight. This review discusses the transduction mechanisms, namely, piezoelectric, capacitive, piezoresistive, and triboelectric, of flexible sensors. Several 2D nanomaterials used as sensing elements for flexible BP sensors are reviewed in terms of their mechanisms, materials, and sensing performance. Previous works on wearable BP sensors are presented, including epidermal patches, electronic tattoos, and commercialized BP patches. Finally, the challenges and future outlook of this emerging technology are addressed for non-invasive and continuous BP monitoring. Full article

Sensors as a composite film made from reduced graphene oxide (rGO) structures filled with a silicone elastomer are soft and flexible, making them suitable for wearable applications. The sensors exhibit three distinct conducting regions, denoting different conducting mechanisms when pressure is applied. This article aims to elucidate the conduction mechanisms in these sensors made from this composite film. It was deduced that the conducting mechanisms are dominated by Schottky/thermionic emission and Ohmic conduction. Full article

Flexible sensors are the essential foundations of pressure sensing, microcomputer sensing systems, and wearable devices. The flexible tactile sensor can sense stimuli by converting external forces into electrical signals. The electrical signals are transmitted to a computer processing system for analysis, realizing real-time health monitoring and human motion detection. According to the working mechanism, tactile sensors are mainly divided into four types—piezoresistive, capacitive, piezoelectric, and triboelectric tactile sensors. Conventional silicon-based tactile sensors are often inadequate for flexible electronics due to their limited mechanical flexibility. In comparison, polymeric nanocomposites are flexible and stretchable, which makes them excellent candidates for flexible and wearable tactile sensors. Among the promising polymers, conjugated polymers (CPs), due to their unique chemical structures and electronic properties that contribute to their high electrical and mechanical conductivity, show great potential for flexible sensors and wearable devices. In this paper, we first introduce the parameters of pressure sensors. Then, we describe the operating principles of resistive, capacitive, piezoelectric, and triboelectric sensors, and review the pressure sensors based on conjugated polymer nanocomposites that were reported in recent years. After that, we introduce the performance characteristics of flexible sensors, regarding their applications in healthcare, human motion monitoring, electronic skin, wearable devices, and artificial intelligence. In addition, we summarize and compare the performances of conjugated polymer nanocomposite-based pressure sensors that were reported in recent years. Finally, we summarize the challenges and future directions of conjugated polymer nanocomposite-based sensors. Full article

With advances in new materials and technologies, there has been increasing research focused on flexible sensors. However, in most flexible pressure sensors made using new materials, it is challenging to achieve high detection sensitivity across a wide pressure range. Although traditional silicon-based sensors have good performance, they are not formable and, because of their rigidity and brittleness, they are not suitable for fitting with soft human skin, which limits their application in wearable devices to collect various signals. Silicon nanomembranes are ultra-thin, flexible materials with excellent piezoresistive properties, and they can be applied in various fields, such as in soft robots and flexible devices. In this study, we developed a flexible pressure sensor based on the use of silicon nanomembranes (with a thickness of only 340 nm) as piezoresistive units, which were transferred onto a flexible polydimethylsiloxane (PDMS) substrate. The flexible pressure sensor operated normally in the range of 0–200 kPa, and the sensitivity of the sensor reached 0.0185 kPa⁻¹ in the low-pressure range of 0–5 kPa. In the high-pressure range of 5–200 kPa, the sensitivity of the sensor was maintained at 0.0023 kPa⁻¹. The proposed sensor exhibited a fast response and excellent long-term stability and could recognize human movements, such as the bending of fingers and wrist joints, while maintaining a stable output. Thus, the developed flexible pressure sensor has promising applications in body monitoring and wearable devices. Full article

This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated, and the doping concentration and geometry of the piezoresistor are evaluated. By optimizing the process, the realization of the pressure sensing diaphragm with a controllable thickness is achieved, and good ohmic contact is ensured. To obtain higher sensitivity and high temperature stability, an SOI structure with a 1.5 µm ultra-thin monocrystalline silicon layer is used in device manufacturing. The device diaphragm size is 700 µm × 700 µm × 2.1 µm. The experimental results show that the fabricated piezoresistive pressure sensor has a high sensitivity of 2.255 mV/V/kPa and a sensing resolution of less than 100 Pa at room temperature. The sensor has a temperature coefficient of sensitivity (TCS) of −0.221 %FS/°C and a temperature coefficient of offset (TCO) of −0.209 %FS/°C at operating temperatures ranging from 20 °C to 160 °C. The reported piezoresistive microelectromechanical systems (MEMS) pressure sensors are fabricated on 8-inch wafers using standard CMOS-compatible processes, which provides a volume solution for embedded integrated precision detection applications of air pressure, offering better insights for high-temperature and miniaturized low-pressure sensor research. Full article