Search Results (114)

Tin selenide (SnSe) is a sustainable, lead-free IV–VI semiconductor whose layered orthorhombic crystal structure induces pronounced electronic and phononic anisotropy, enabling diverse energy-related functionalities. This review systematically summarizes recent progress in understanding the structure–property–processing relationships that govern SnSe performance in thermoelectric and optoelectronic applications. Key crystallographic characteristics are first discussed, including the temperature-driven Pnma–Cmcm phase transition, anisotropic band and valley structures, and phonon transport mechanisms that lead to intrinsically low lattice thermal conductivity below 0.5 W m⁻¹ K⁻¹ and tunable carrier transport. Subsequently, major synthesis strategies are critically compared, spanning Bridgman and vertical-gradient single-crystal growth, spark plasma sintering and hot pressing of polycrystals, as well as vapor- and solution-based thin-film fabrication, with emphasis on process windows, stoichiometry control, defect chemistry, and microstructure engineering. For thermoelectric applications, directional and temperature-dependent transport behaviors are analyzed, highlighting record thermoelectric performance in single-crystal SnSe at hi. We analyze directional and temperature-dependent transport, highlighting record thermoelectric figure of merit values exceeding 2.6 along the b-axis in single-crystal SnSe at ~900 K, as well as recent progress in polycrystalline and thin-film systems through alkali/coinage-metal doping (Ag, Na, Cu), isovalent and heterovalent substitution (Zn, S), and hierarchical microstructural design. For optoelectronic applications, optical properties, carrier dynamics, and photoresponse characteristics are summarized, underscoring high absorption coefficients exceeding 10⁴ cm⁻¹ and bandgap tunability across the visible to near-infrared range, together with interface engineering strategies for thin-film photovoltaics and broadband photodetectors. Emerging applications beyond energy conversion, including phase-change memory and electrochemical energy storage, are also reviewed. Finally, key challenges related to selenium volatility, performance reproducibility, long-term stability, and scalable manufacturing are identified. Overall, this review provides a process-oriented and application-driven framework to guide the rational design, synthesis optimization, and device integration of SnSe-based materials. Full article

Driven by the demands of artificial intelligence, big data and the Internet of Things, non-volatile memory has become the cornerstone of modern computing. However, at present, most of the preparation processes are quite complex and have high requirements for the materials. Here, we discovered that hydrazine (N₂H₄) molecules can be efficiently intercalated into the MoTe₂, acting as stable charge-trapping centers. This intercalation not only induces a controllable reversible polar conversion but also causes a huge hysteretic window (>60 V) lasting over one hour in air. Leveraging this giant hysteresis, we fabricated a simplified memory device. The device demonstrates a large erase/program current ratio of ~10⁴ and excellent retention characteristics. Our work pioneers the use of interlayer molecular intercalation for electronic modulation in 2D semiconductors, offering a new paradigm for developing memory devices with fabrication processes. Full article

In this work, we report optical and photoelectrochemical properties of BiVO₄ synthesized by microwave, sonochemical, sol–gel, and direct deposition on conductive substrate methods. Structural and morphological characterization using XRD, SEM, and AFM confirmed the presence of both monoclinic and tetragonal phases, with variations in particle size and surface roughness. UV-Vis spectroscopy revealed band gaps in the range of 2.38–2.51 eV. Photoelectrochemical performance was evaluated through measurements of photocurrents under varying illumination wavelengths and applied potentials. BiVO₄ as a thin film exhibited the highest photocurrent intensity due to its superior semiconductor–substrate contact. In contrast, BiVO₄ samples obtained as a powder showed significantly lower photocurrents but demonstrated the photocurrent switching effects, attributed to the presence of surface trap states and oxygen vacancies. The obtained results highlight the importance of synthesis strategy in tailoring BiVO₄ properties for use as a photoelectrochemical cell and suggest potential applications in molecular electronics, such as logic gates and memory devices. Full article

Resistive switching (RS) phenomena are nowadays one of the most studied topics in the area of microelectronics. It can be observed in Metal–Insulator–Metal (MIM) structures that are the basis of resistive switching random-access memories (RRAMs). In the case of commercial use of RRAMs, it is beneficial that the applied materials would have to be compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. Fabricating methods of these materials can determine their stoichiometry and structural composition, which can have a detrimental impact on the electrical performance of manufactured devices. In this study, we present the influence of the Ar/N₂ ratio during reactive magnetron sputtering of titanium nitride (TiN) electrodes on the resistive switching behavior of MIM devices. We used silicon oxide (SiOx) as a dielectric layer, which was characterized by the same properties in all fabricated MIM structures. The composition of TiN thin layers was controlled by tuning the Ar/N₂ ratio during the deposition process. The fabricated conductive materials were characterized in terms of chemical and structural properties employing X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. Structural characterization revealed that increasing the Ar content during the reactive sputtering process affects the crystallite size of the deposited TiN layer. The resulting crystallite sizes ranged from 8 Å to 757.4 Å. The I-V measurements of fabricated devices revealed that tuning the Ar/N₂ ratio during the deposition of TiN electrodes affects the RS behavior. Our work shows the importance of controlling the stoichiometry and structural parameters of electrodes on resistive switching phenomena. Full article

Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal–oxide–semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS₂ precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS₂ (roughness: 0.8–0.9 nm) over 1.5 cm × 2 cm coupons. Lateral MoS₂/graphene devices exhibit reproducible non-volatile resistive switching with a set transition (SET) near +6 V and an analogue ON/OFF ≈2.1, attributable to vacancy-induced Schottky-barrier modulation. The single-furnace magnetron sputtering + sulfurization sequence avoids toxic H₂S, polymer transfer steps, and high-resistance contacts, offering a cost-effective pathway toward wafer-scale 2D memristors compatible with back-end CMOS temperatures. Full article

Titanium dioxide (TiO₂) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO₂ is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron–hole separation. Additionally, TiO₂ exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO₂ nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO₂/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD’s thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO₂ nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO₂-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology. Full article

This study proposes a novel framework integrating long short-term memory (LSTM) networks with Bayesian optimization (BO) to address process–device co-optimization challenges in trench-gate metal–oxide–semiconductor field-effect transistor (MOSFET) manufacturing. Conventional TCAD simulations, while accurate, suffer from computational inefficiency in high-dimensional parameter spaces. To overcome this, an LSTM-based TCAD proxy model is developed, leveraging hierarchical temporal dependencies to predict electrical parameters (e.g., breakdown voltage, threshold voltage) with deviations below 3.5% compared to physical simulations. The model, validated on both N-type and P-type 20 V trench MOS devices, outperforms conventional RNN and GRU architectures, reducing average relative errors by 1.78% through its gated memory mechanism. A BO-driven inverse optimization methodology is further introduced to navigate trade-offs between conflicting objectives (e.g., minimizing on-resistance while maximizing breakdown voltage), achieving recipe predictions with a maximum deviation of 8.3% from experimental data. Validation via TCAD-simulated extrapolation tests and SEM metrology confirms the framework’s robustness under extended operating ranges (e.g., 0–40 V drain voltage) and dimensional tolerances within industrial specifications. The proposed approach establishes a scalable, data-driven paradigm for semiconductor manufacturing, effectively bridging TCAD simulations with production realities while minimizing empirical trial-and-error iterations. Full article

The newly discovered 2D spin-gapless magnetic materials, which provide new opportunities for combining spin polarization and the quantum anomalous Hall effect, provide a new method for the design and application of memory and nanoscale devices. However, a low Curie temperature (T_C) is a common limitation in most 2D ferromagnetic materials, and research on the topological properties of nontrivial 2D spin-gapless materials is still limited. We predict a novel spin-gapless semiconductor of monolayer h-VN, which has a high Curie temperature (~543 K), 100% spin polarization, and nontrivial topological properties. A nontrivial band gap is opened in the spin-gapless state when considering the spin–orbit coupling (SOC); it can increase with the intensity of spin–orbit coupling and the band gap increases linearly with SOC. By calculating the Chern number and edge states, we find that when the SOC strength is less than 250%, the monolayer h-VN is a quantum anomalous Hall insulator with a Chern number C = 1. In addition, the monolayer h-VN still belongs to the quantum anomalous Hall insulators with its tensile strain. Interestingly, the quantum anomalous Hall effect with a non-zero Chern number can be maintained when using h-BN as the substrate, making the designed structure more suitable for experimental implementation. Our results provide an ideal candidate material for achieving the QAHE at a high Curie temperature. Full article

BaTiO₃ (BTO), a lead-free chalcogenide ferroelectric material, has emerged as a promising candidate for ferroelectric memories due to its advantageous ferroelectric properties, notable flexibility, and mechanical stability, along with a high dielectric constant and minimal leakage. These attributes lay a crucial foundation for multi-value storage. In this study, high-quality BaTiO₃ ferroelectric thin films have been successfully prepared on STO substrates by pulsed laser deposition (PLD), and Pt/BaTiO₃/SrRuO₃/SrTiO₃ ferroelectric heterojunctions were finally prepared by a combination of UV lithography and magnetron sputtering. Characterization and performance tests were carried out by AFM, XRD, and a semiconductor analyzer. The results demonstrate that the ferroelectric heterojunction prepared in this study exhibits excellent ferroelectric properties. Furthermore, the device demonstrates fatigue-free operation after 10⁷ bipolar switching cycle tests, and the polarization value exhibits no significant decrease in the holding characteristic test at 10⁴ s, thereby further substantiating its exceptional reliability and durability. These findings underscore the considerable promise of BTO ferroelectric memories for nonvolatile storage applications and lay the foundation for the development in the fields of both in-memory computing systems and neuromorphic computing. Full article

Quantum technologies are currently being explored for various applications, including computing, secure communication, and sensor technology. A critical aspect of achieving high-fidelity spin manipulations in quantum devices is the controlled optical initialization of electron spins. This paper introduces a low-cost programming scheme based on a 32-bit STM32F373 microcontroller, aimed at facilitating high-precision measurements of optically active solid-state spin centers within semiconductor crystals (SiC, hBN, and diamond) utilizing a multi-pulse sequence. The effective shaping of short optical pulses across semiconductor and solid-state lasers, covering the visible to near-infrared range (405–1064 nm), has been validated through photoinduced electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) spectroscopies. The application of pulsed laser irradiation influences the EPR relaxation parameters associated with spin centers, which are crucial for advancements in quantum computing. The presented experimental approach facilitates the investigation of weak electron–nuclear interactions in crystals, a key factor in the development of quantum memory utilizing nuclear qubits. Full article

Borophene, a revolutionary two-dimensional (2D) material with exceptional electrical, physical, and chemical properties, holds great promise for high-performance, highly integrated information storage systems. However, its metallic nature and structural instability have significantly limited its practical applications. To address these challenges, hydrogenated borophene has emerged as an ideal alternative, offering enhanced stability and semiconducting properties. In this study, we report a novel and scalable method for synthesizing hydrogenated borophene via the in situ thermal decomposition of potassium borohydride in a substrate-free environment. This approach enables the production of borophene with outstanding crystallinity, uniformity, and continuity, representing a significant advancement in borophene fabrication techniques. Furthermore, the hydrogenated borophene-based non-volatile memory device we developed exhibits a high ON/OFF-current ratio exceeding 10⁵, a low operating voltage of 2 V, and excellent long-term cycling stability. These groundbreaking results demonstrate the immense potential of 2D borophene-based materials in next-generation high-performance information storage devices. Full article

With the improvement of integration levels to several nanometers or less, semiconductor leakage current has become an important issue, and oxide-based semiconductors, which have replaced Si-based channel layer semiconductors, have attracted attention. Herein, we fabricated capacitors with a metal–insulator–semiconductor–metal structure using HfO₂ thin films deposited at 240 °C and TiO₂ thin films deposited at 300 °C via remote plasma (RP) and direct plasma (DP) atomic layer deposition and analyzed the effects of the charge-trapping and semiconducting properties of these films. Charge-trapping memory (CTM) devices with HfO₂ (charge-trapping layer) and TiO₂ (semiconductor) films were fabricated and characterized in terms of their memory properties. Al₂O₃ thin films were used as blocking and tunneling layers to prevent the leakage of charges stored in the charge-trapping layer. For the TiO₂ layer, the heat-treatment temperature was optimized to obtain an anatase phase with optimal semiconductor properties. The memory characteristics of the RP HfO₂–TiO₂ CTM devices were superior to those of the DP HfO₂–TiO₂ CTM devices. This result was ascribed to the decrease in the extent of damage and contamination observed when the plasma was spaced apart from the deposited HfO₂ and TiO₂ layers (i.e., in the case of RP deposition) and the reduction in the concentration of oxygen vacancies at the interface and in the films. Full article

In this work, floating-gate organic field-effect transistor memory using the n-type semiconductor poly-{[N,N′-bis(2-octyldodecyl) naphthalene-1,4,5,8-bis (dicarbo- ximide)-2,6-dili]-alt-5,5′-(2,2′-bithiophene)} (N2200) as a charge-trapping layer is presented. With the assistance of a technology computer-aided design (TCAD) tool (Silvaco-Atlas), the storage characteristics of the device are numerically simulated by using the carrier injection and Fower–Nordheim (FN) tunneling models. The shift in the transfer characteristic curves and the charge-trapping mechanism after programming/erasing (P/E) operations under different P/E voltages and different pulse operation times are discussed. The impacts of different thicknesses of the tunneling layer on storage characteristics are also analyzed. The results show that the memory window with a tunneling layer thickness of 8 nm is 16.1 V under the P/E voltage of ±45 V, 5 s. After 1000 cycle tests, the memory shows good fatigue resistance, and the read current on/off ratio reaches 10³. Full article

The advent of two-dimensional (2D) ferroelectrics offers a new paradigm for device miniaturization and multifunctionality. Recently, 2D α-In₂Se₃ and related III–VI compound ferroelectrics manifest room-temperature ferroelectricity and exhibit reversible spontaneous polarization even at the monolayer limit. Here, we employ first-principles calculations to investigate group-III selenide van der Waals (vdW) heterojunctions built up by 2D α-In₂Se₃ and α-Ga₂Se₃ ferroelectric (FE) semiconductors, including structural stability, electrostatic potential, interfacial charge transfer, and electronic band structures. When the FE polarization directions of α-In₂Se₃ and α-Ga₂Se₃ are parallel, both the α-In₂Se₃/α-Ga₂Se₃ P↑↑ (UU) and α-In₂Se₃/α-Ga₂Se₃ P↓↓ (NN) configurations possess strong built-in electric fields and hence induce electron–hole separation, resulting in carrier depletion at the α-In₂Se₃/α-Ga₂Se₃ heterointerfaces. Conversely, when they are antiparallel, the α-In₂Se₃/α-Ga₂Se₃ P↓↑ (NU) and α-In₂Se₃/α-Ga₂Se₃ P↑↓ (UN) configurations demonstrate the switchable electron and hole accumulation at the 2D ferroelectric interfaces, respectively. The nonvolatile characteristic of ferroelectric polarization presents an innovative approach to achieving tunable n-type and p-type conductive channels for ferroelectric field-effect transistors (FeFETs). In addition, in-plane biaxial strain modulation has successfully modulated the band alignments of the α-In₂Se₃/α-Ga₂Se₃ ferroelectric heterostructures, inducing a type III–II–III transition in UU and NN, and a type I–II–I transition in UN and NU, respectively. Our findings highlight the great potential of 2D group-III selenides and ferroelectric vdW heterostructures to harness nonvolatile spontaneous polarization for next-generation electronics, nonvolatile optoelectronic memories, sensors, and neuromorphic computing. Full article

In this paper, we review our work on the manipulation of magnetization in ferromagnetic semiconductors (FMSs) using electric-current-induced spin-orbit torque (SOT). Our review focuses on FMS layers from the (Ga,Mn)As zinc-blende family grown by molecular beam epitaxy. We describe the processes used to obtain spin polarization of the current that is required to achieve SOT, and we briefly discuss methods of specimen preparation and of measuring the state of magnetization. Using specific examples, we then discuss experiments for switching the magnetization in FMS layers with either out-of-plane or in-plane easy axes. We compare the efficiency of SOT manipulation in single-layer FMS structures to that observed in heavy-metal/ferromagnet bilayers that are commonly used in magnetization switching by SOT. We then provide examples of prototype devices made possible by manipulation of magnetization by SOT in FMSs, such as read-write devices. Finally, based on our experimental results, we discuss future directions which need to be explored to achieve practical magnetic memories and related applications based on SOT switching. Full article