Search Results (232)

Cancer therapy resistance emerges from highly integrated molecular systems that enable tumor cells to evade cell death and survive cytotoxic therapeutic stress. High Mobility Group Box 1 (HMGB1) is increasingly gaining recognition as a central coordinator of these resistance programs. This review delineates how HMGB1 functions as a molecular switch that dynamically redistributes between cellular compartments in response to stress, with each localization enabling a distinct layer of resistance. In the nucleus, HMGB1 enhances chromatin accessibility and facilitates the recruitment of DNA repair machinery, strengthening resistance to radio- and chemotherapeutic damage. Cytosolic HMGB1 drives pro-survival autophagy, maintains redox stability, and modulates multiple regulated cell death pathways, including apoptosis, ferroptosis, and necroptosis, thereby predominantly shifting cell-fate decisions toward survival under therapeutic pressure. Once released into the extracellular space, HMGB1 acts as a damage-associated molecular pattern (DAMP) that activates key pro-survival and inflammatory signaling pathways, establishing microenvironmental circuits that reinforce malignant progression and therapy escape. HMGB1 further intensifies resistance through upregulation of multidrug resistance transporters, amplifying drug efflux. Together, these compartmentalized functions position HMGB1 as a central node in the networks of cancer therapy resistance. Emerging HMGB1-targeted agents, ranging from peptides and small molecules to receptor antagonists and nanoformulations, show promise in reversing resistance, but clinical translation will require precise, context- and redox-informed HMGB1 targeting to overcome multifactorial resistance program in refractory cancers. Full article

Antibody-based therapeutics targeting tumor surface markers have transformed cancer treatment; however, their efficacy is frequently limited by tumor escape mechanisms such as antigen loss, phenotypic switching, and heterogeneous target expression. Beyond genetic or transcriptional changes, RNA alternative splicing (AS) has emerged as a central post-transcriptional mechanism driving antigenic diversity and immune escape. This review outlines how AS-generated isoforms remodel surface antigen structure and function across key therapeutic targets—including CD/19/CD20/CD22, EGFR/HER2, VEGF, and PD-1/PD-L1—thereby promoting resistance to monoclonal antibodies, antibody–drug conjugates, and immune checkpoint inhibitors. The aberrant activity of splicing regulators disrupts canonical exon selection, leading to altered receptor signaling or the secretion of soluble decoy isoforms that evade immune recognition. Emerging therapeutic strategies aim to counteract these processes through antisense oligonucleotide-mediated splicing correction, pharmacologic modulation of splicing regulators, and isoform-selective antibody or CAR-T designs. Collectively, understanding splicing-driven antigenic plasticity reveals an additional, dynamic layer of resistance regulation and provides a framework for developing RNA-informed precision antibody therapies designed to restore antigen expression, overcome immune escape, and enhance durable clinical responses. Full article

This work focuses on developing resistive switching (RS) devices using thermally annealed (TA) SiO₂/Si multilayers (ML). Three SiO₂/Si bilayers were deposited with an additional 10 nm SiO₂ layer as a dielectric barrier layer on top of the ML. The SiO₂ layers were 6 nm thick, while the thickness of the Si layers varied from 2, 4, and 6 nm, and were labeled as ML-62, ML-64, and ML-66, respectively. X-ray photoelectron spectroscopy analysis revealed well-defined ML structures before TA. However, after TA, samples ML-64 and ML-62 showed discontinuities due to diffusion between neighboring Si layers, increasing the dimensions of the Si-rich regions. In fact, the concentration of elemental Si (Si⁰) within the intermediate Si layer increases as the Si layer becomes thinner. Consequently, the size of Si-nanocrystals, created after TA, increases from 6 to 8.5 nm for ML-66 to ML-62, as confirmed by Raman and transmission electron microscopy analysis. The composition discontinuities and loss of the ML structure resulted in erratic electrical behavior, with an electroforming (EF) voltage as high as −14 V in sample ML-62. For the ML-66, which retained the ML structure, the EF voltage was reduced to −4 V, showing SET/RESET values of around ±3 V and stable electrical behavior, with an ON/OFF ratio of up to seven orders of magnitude. This demonstrates the importance of the ML design in the operation of RS devices. Full article

Ba_0.6Sr_0.4TiO₃ (BST) thin films were deposited on ITO substrates via rf magnetron sputtering, followed by structural and morphological characterization using XRD and FE-SEM. Metal–insulator–metal (MIM) RRAM devices were fabricated by depositing Al top electrodes, and their electrical properties were examined through I–V measurements. The optimized BST films deposited at 40% oxygen concentration exhibited stable resistive switching, with an operating voltage of 3 V, an on/off ratio of 1, and a leakage current of 10⁻⁸ A. After rapid thermal annealing at 500 °C, the on/off ratio improved to 2 but leakage increased to 10⁻³ A. Incorporating an electron transport layer (ETL) effectively suppressed the leakage current to 10⁻⁵ A while maintaining the on/off ratio at 2. Moreover, a transition from bipolar to unipolar switching was observed at higher oxygen concentration (60%). These results highlight the role of ETLs in reducing leakage and stabilizing switching characteristics, providing guidance for the development of transparent, low-power, and high-reliability BST-based RRAM devices. This study aims to investigate the role of Ba_0.6Sr_0.4TiO₃ (BST) ferroelectric oxide as a functional switching layer in resistive random-access memory (RRAM) and to evaluate how interface engineering using an electron transport layer (ETL) can improve resistive switching stability, leakage suppression, and device reliability. Full article

Work investigates the doping of molybdenum oxide (MoO_x) with tungsten (W). The successful incorporation of W into the MoO_x lattice was confirmed through X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS). Structural and optical analysis revealed the presence of oxygen vacancies within the W-MoO_x film, which are known to facilitate resistive switching (RS) in memristive devices. Based on this, a flexible memristor with the structure PET/ITO/W-MoO_x/polymethyl methacrylate (PMMA)/Al was fabricated. PMMA was strategically introduced between the W-MoO_x layer and the aluminum electrode to modulate interfacial properties that influence RS behavior. The W-MoO_x/PMMA-based memristor exhibited good resistive switching characteristics, with a memory window of approximately 12 and a retention time exceeding 2 × 10⁴ s, demonstrating a non-volatile memory behavior. In the high-resistance state (HRS), the conduction mechanism under higher applied voltages follows a space-charge-limited current (SCLC) model, indicating that the RS process is primarily governed by charge trapping and de-trapping at the interface. Overall, the consistent and robust switching performance of the W-MoO_x/PMMA heterostructure underlines its potential as a reliable functional layer for next-generation resistive random-access memory (ReRAM) devices. Full article

Wide-Bandgap (WBG) semiconductors—silicon carbide (SiC) and gallium nitride (GaN)— enable high-power-density conversion, but performance is limited by where heat is generated and how it is removed. This review links device-level loss mechanisms (conduction and switching, including output-capacitance hysteresis and dynamic on-resistance) to structure-driven hot spots within the ultra-thin (tens of nanometers) two-dimensional electron gas (2DEG) channel of GaN HEMTs and to thermal boundary resistance at layer interfaces. We compare wire-bondless package concepts—double-sided cooling, embedded packaging, and interleaved planar layouts—and survey system-level cooling that shortens the conduction path and raises heat-transfer coefficients. The impact on reliability is discussed using temperature-sensitive electrical parameters (e.g., on-state VDS, threshold voltage, drain leakage, di/dt, and gate current) for real-time junction-temperature estimation and compact electro-thermal RC models for remaining-useful-life prediction. Evidence from recent literature points to interface resistance in GaN-on-SiC as a primary bottleneck, while near-junction cooling and advanced packages are effective mitigations. We argue for integrated co-design—devices, packaging, electromagnetic interference (EMI)-aware layout, and cooling—together with interface engineering and health monitoring to deliver reliable, high-density WBG systems. Full article

In the pursuit of advanced non-volatile memory technologies, ferroelectric memristors have attracted great attention. However, traditional perovskite ferroelectric materials are hampered by environmental pollution, limited applicability, and the complexity and high cost of conventional vacuum deposition methods. This has spurred the exploration of alternative materials and fabrication strategies. Herein, a flexible Pt/Zr: HfO₂ (HZO)/graphene oxide (GO)/mica memristor is successfully fabricated using the total solution-processed method. The interfacial oxygen competition mechanism between the HZO layer and the GO bottom electrode facilitates the formation of the HZO ferroelectric phase. The as-prepared device exhibits a switching ratio of approximately 150 and can maintain eight distinct resistance levels, and it can also effectively simulate neural responses. By integrating the ferroelectric polarization principle and the piezoelectric effect of HZO, along with the influence of GO, the performance variations of the as-prepared device under mechanical and thermal influences are further explored. Notably, Morse code recognition is achieved by utilizing the device’s pressure properties and setting specific press rules. The as-prepared device can accurately convert and store information, opening new avenues for non-volatile memory applications in silent communication and promoting the development of wearable electronics. Full article

Laser shock processing (LSP) is a surface treatment technique used to enhance mechanical properties such as hardness, corrosion resistance, and wear resistance. This study investigates the effects of LSP on a 6061-T6 aluminium alloy using four treatment conditions: nanosecond (ns-LSP), picosecond (ps-LSP), and a combination of nanosecond–picosecond (nsps-LSP) and picosecond–nanosecond (psns-LSP) pulses. Two laser systems were employed: a Q-switched Nd:YAG laser (850 mJ/pulse, 6 ns, 1064 nm, 10 Hz), and an Ekspla Atlantic 355-60 laser (0.110 mJ/pulse, 13 ps, 1064 nm, 1 kHz). All treatments induced compressive residual stresses up to 1 mm in depth. Additionally, improvements in microhardness were observed, particularly at deeper layers in the combined nsps-LSP treatment. Surface roughness was measured and compared. Among all configurations, the nsps-LSP treatment produced the highest compressive residual stresses (−428 MPa) and greater microhardness at depth. These results suggest that the combined nsps-LSP treatment represents a promising approach to enhance the mechanical performance of metallic components. Full article

In this paper, the impact of SiN passivation on dynamic-R_ON degradation of AlGaN/GaN HEMTs devices is put in evidence. To this end, samples showing different SiN passivation stoichiometry are considered, labeled as Sample A and Sample B. For dynamic-R_ON tests, two different experimental setups are employed to investigate the R_ON-drift showing up during conventional switch mode operation by driving the DUTs under both (i) resistive load and (ii) soft-switching trajectory. This allows to discern the impact of hot carriers and off-state drain voltage stress on the R_ON parameter drift. Measurements performed with both switching loci shows similar dynamic-R_ON response, indicating that hot carriers are not involved in the degradation of tested devices. Nevertheless, a significant difference was observed between Sample A and Sample B, with the former showing an additional R_ON-degradation mechanism, not present on the latter. This additional drift is totally ascribed to the SiN passivation layer and is confirmed by the different leakage current measured across the two SiN types. The mechanism is explained by the injection of negative charges from the Source Field-Plate towards the AlGaN surface that are captured by surface/dielectric states and partially depletes the 2DEG underneath. Full article

Metal oxides are the most widely used material for the resistive switching layer of memristors. Nevertheless, the majority of oxide-based memristors exhibit binary switching, restricting the emulation of neuronal synaptic behaviors. In this paper, the shift from digital-to-analog switching behavior is achieved by inserting an Al₂O₃ layer atop Zr-doped HfO₂. The TiN/Al₂O₃/HZO/W/Si device exhibits long resistance state retention time and consistency. In addition, by applying a varying voltage, the device exhibits up to 20 continuous resistance states, which is highly significant for high-density storage. Upon the application of a programmable pulse signal, the device’s conductance undergoes continual alteration, reflecting long-term potentiation (LTP) and long-term depression (LTD) synaptic characteristics. The conduction mechanism of the device is studied through physical model fitting and schematic diagrams. Full article

Sol–gel-processed zinc oxide (ZnO) and magnesium-doped zinc oxide (ZnMgO) are widely used in quantum dot light-emitting diodes (QLEDs) due to their excellent charge transport properties, ease of fabrication, and tunable film characteristics. In particular, the ZnMgO/ZnO bilayer structure has attracted considerable attention for its dual functionality: defect passivation by ZnMgO and efficient charge transport by ZnO. However, while the effects of resistive switching (RS) in individual ZnO and ZnMgO layers on the aging behavior of QLEDs have been studied, the RS characteristics of sol–gel-processed ZnMgO/ZnO bilayers remain largely unexplored. In this study, we systematically analyzed RS properties of an indium tin oxide (ITO)/ZnMgO/ZnO/aluminum (Al) device, demonstrating superior performance compared to devices with single layers of either ZnMgO or ZnO. We also investigated the shelf-aging characteristics of RS devices with single and bilayer structures, finding that the bilayer structure exhibited the least variation over time, thereby confirming its enhanced uniformity and reliability. Furthermore, based on basic current–voltage measurements, we estimated accuracy variations in MNIST pattern recognition using a two-layer perceptron model. These results not only identify a promising RS device architecture based on the sol–gel process but also offer valuable insights into the aging behavior of QLEDs incorporating ZnMgO/ZnO bilayers, ITO, and Al electrodes. Full article

Vascular smooth muscle cells (VSMCs) are a major cell type in the arterial wall responsible for regulating vascular homeostasis. Under physiological conditions, VSMCs reside in the medial layer of the arteries, express elevated levels of contractile proteins, regulate vascular tone, and provide mechanical strength and elasticity to the blood vessel. In response to obesity, hyperglycemia, and insulin resistance, critical pathogenic hallmarks of Type 2 diabetes (T2D), VSMCs undergo a phenotypic transformation, adopting new phenotypes with increased proliferative (synthetic), inflammatory (macrophage-like), or bone-like (osteogenic) properties. While crucial for normal repair and vascular adaptation, VSMC phenotypic plasticity is a key driver for the development and progression of macrovascular complications associated with T2D. Despite advances in lineage tracing and multi-omics profiling that have uncovered key molecular regulators of VSMC phenotypic switching in vasculopathy, our understanding of the cellular and molecular mechanisms underlying VSMC transformation into diseased phenotypes in T2D remains incomplete. This review will provide a holistic summary of research from the past 15 years, with a focus on the signaling pathways and transcriptional regulators that govern VSMC phenotypic transition in response to obesity, hyperglycemia, and insulin resistance. We examine the integrated molecular mechanisms that orchestrate VSMC fate reprogramming in T2D and highlight the dynamic interplay among diverse signaling and transcriptional networks. Emphasis is placed on how these interconnected pathways collectively influence VSMC behavior and contribute to the pathogenesis of T2D-associated atherosclerosis. Full article

MEMS switches offer great advantages over solid-state and conventional electromechanical switches, including a compact size and high isolation. This paper presents a novel silicon-to-silicon (Si-to-Si) MEMS switch featuring two suspended actuated platforms for DC power switching applications. The proposed design uniquely incorporates dual suspended chevron actuators, enabling bidirectional actuation, enhancing force generation, and improving overall switching performance. Leveraging the robustness of silicon, this Si-to-Si contact switch aims to enhance the reliability of MEMS-based DC power switches. Testing of a fabricated device in the PiezoMUMPs process demonstrated that a 2 μm initial contact gap closes at 1.1 V_DC, with a total actuation power of 246 mW. The switch exhibits a linear voltage–current response up to 5 mA of switching current and achieves a minimum contact resistance of ~294 ± 2 Ω, one of the lowest reported for Si-to-Si contacts. This low contact resistance is attributed to the suspended contact platforms, which mitigate misalignment. The measured response time was 4 ms for turn-on and 2.5 ms for turn-off. This switch withstood a breakdown voltage of up to 376 V across the 2 µm contact gap. Moreover, the 200 nm thick oxide layer separating the actuation and signal lines exhibited breakdown at 183 V. These findings highlight the potential of the switch for high-voltage applications and pave the way for further enhancements to improve its reliability in harsh environments. Full article

Resistive switching (RS) phenomena are nowadays one of the most studied topics in the area of microelectronics. It can be observed in Metal–Insulator–Metal (MIM) structures that are the basis of resistive switching random-access memories (RRAMs). In the case of commercial use of RRAMs, it is beneficial that the applied materials would have to be compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. Fabricating methods of these materials can determine their stoichiometry and structural composition, which can have a detrimental impact on the electrical performance of manufactured devices. In this study, we present the influence of the Ar/N₂ ratio during reactive magnetron sputtering of titanium nitride (TiN) electrodes on the resistive switching behavior of MIM devices. We used silicon oxide (SiOx) as a dielectric layer, which was characterized by the same properties in all fabricated MIM structures. The composition of TiN thin layers was controlled by tuning the Ar/N₂ ratio during the deposition process. The fabricated conductive materials were characterized in terms of chemical and structural properties employing X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. Structural characterization revealed that increasing the Ar content during the reactive sputtering process affects the crystallite size of the deposited TiN layer. The resulting crystallite sizes ranged from 8 Å to 757.4 Å. The I-V measurements of fabricated devices revealed that tuning the Ar/N₂ ratio during the deposition of TiN electrodes affects the RS behavior. Our work shows the importance of controlling the stoichiometry and structural parameters of electrodes on resistive switching phenomena. Full article

In this study, tin oxide (SnO₂) resistive random-access memory (RRAM) thin films were fabricated using the thermal evaporation and radiofrequency and dc frequency sputtering techniques for metal–insulator–metal (MIM) structures. The fabrication process began with the deposition of a silicon dioxide (SiO₂) layer onto a silicon (Si) substrate, followed by the deposition of a titanium nitride (TiN) layer to serve as the bottom electrode. Subsequently, the tin oxide (SnO₂) layer was deposited as the resistive switching insulator. Two types of top electrodes were developed to investigate the influence of different oxygen concentrations on the bipolar switching, electrical characteristics, and performance of memory devices. An aluminum (Al) top electrode was deposited using thermal evaporation, while a platinum (Pt) top electrode was deposited via dc sputtering. As a result, two distinct metal–insulator–metal (MIM) memory RRAM device structures were formed, i.e., Al/SnO₂/TiN/SiO₂/Si and Pt/SnO₂/TiN/SiO₂/Si. In addition, the symmetry bipolar switching characteristics, electrical conduction mechanism, and oxygen concentration factor of the tin oxide-based memory devices using rapid thermal annealing and different top electrodes were determined and investigated by ohmic, space-charge-limit-current, Schottky, and Poole–Frenkel conduction equations in this study. Full article