Resistive Random Access Memory Devices: Mechanisms, Materials, Devices, and Applications
A special issue of Micromachines (ISSN 2072-666X).
Deadline for manuscript submissions: 31 January 2026 | Viewed by 25
Special Issue Editors
Interests: non-volatile resistor random memory devices; ferroelectric memory devices; thin films; functional ceramics applications
Special Issues, Collections and Topics in MDPI journals
Interests: electroceramics; thin films; piezoelectric ceramics
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Nonvolatile resistance random access memory (RRAM) devices have garnered significant attention because of their simple structure, nonvolatile nature, rapid operation speed, multi-state capability, compact size, high packing density, and low power consumption. RRAM devices hold promising potential for applications in portable electronic systems, including personal digital assistants, mobile phones, and digital cameras, as well as in neuromorphic computing systems. Various materials have been explored for RRAM devices, such as chalcogenides, oxides, carbon, and organic compounds. Different mechanisms have been proposed to explain the resistive switching phenomena, including the formation/rupture of conducting filaments and carrier trapping/detrapping at defects. This special issue covers, but is not limited to, the following topics: resistive switching mechanisms, novel RRAM materials, novel RRAM device structures, and potential applications of RRAM devices.
Prof. Dr. Kai-Huang Chen
Prof. Dr. Chien-Min Cheng
Guest Editors
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Keywords
- RRAM
- resistive switching
- nonvolatile memory
- neuromorphic computing
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