Search Results (17)

This study aimed to determine the optimal nitrogen (N) fertilization rate per regrowth cycle for Megathyrsus maximus cv. BRS Tamani by evaluating its effects on forage production, nutrient uptake, bromatological composition, and in vitro degradation kinetics. A randomized complete block design with five N doses (0, 40, 80, 120, and 160 kg N ha⁻¹) and seven replications was conducted over two rainy seasons. From December 2019 to April 2020, canopy height and light interception were measured weekly. When canopy height reached 95% of light interception the grass was harvest and productive and morphological structure were measured. Nitrogen fertilization increased forage mass and yield up to the dose of 40 kg N ha⁻¹, resulting in 1959 and 9798 kg DM ha⁻¹, respectively, while nitrogen use efficiency declined at higher doses. Weed mass was decreased at 0 kg ha⁻¹, and chlorophyll index increased with the N dose. Nitrogen and potassium were the most extracted nutrients, with nitrogen uptake being highest at 80 kg ha⁻¹. Fertilization elevated the levels of crude protein, NDIP, cell content, and cell wall-bound protein, while ash content decreased. In vitro fermentation showed a reduced gas volume at higher N doses and improved degradation and digestibility up to 40 kg ha⁻¹. Nitrogen fertilization enhanced the forage yield and quality of BRS Tamani, with 40 kg ha⁻¹ maximizing efficiency and digestibility. Full article

Savannas play a key role in estimating emissions. Climate change has impacted the Cerrado savanna carbon balance. We used the burned area product and long-term field inventories on post-fire vegetation regrowth to estimate the impact of the fire on greenhouse gas emissions and net carbon dioxide (CO₂) emissions in the Cerrado savanna between 1985 and 2020. We estimated the immediate emissions from fires, CO₂ emissions by plant mortality, and CO₂ removal from vegetation regrowth. The burned area was 29,433 km²; savanna fires emitted approximately 2,227,964 Gg of CO₂, 85,057 Gg of CO, 3010 Gg of CH₄, 5,103 Gg of NO_x, and 275 Gg of N₂O. We simulated vegetation regrowth according to three fire regime scenarios: extreme (high fire frequency and short fire interval), intermediate (medium fire frequency and medium fire interval), and moderate (low fire frequency and long fire interval). Under the extreme and intermediate scenarios, the vegetation biomass decreased by 2.0 and 0.4% (ton/ha-year), while the biomass increased by 2.1% under a moderate scenario. We converted this biomass into CO₂ and showed that the vegetation regrowth removed 63.5% of the total CO₂ emitted (2,355,426 Gg), indicating that the Cerrado savanna has been a source of CO₂ to the atmosphere. Full article

A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO₃) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al_0.24Ga_0.76N. In the absence of an AlGaN etch stop layer, the etchant primarily targets N-polar unintentionally doped (UID) GaN, indicating its potential as a suitable replacement for selective dry etches in the fabrication of GaN high-electron-mobility transistors (HEMTs). The efficacy and selectivity of this etchant were confirmed through its application to a gate recess module of a deep-recess HEMT, where, despite a 228% over-etch, the 2.6 nm AlGaN etch stop layer remained intact. We also evaluated the proposed method for the selective etching of the GaN cap in the n+ regrowth process, achieving a contact resistance matching that of a BCl₃/SF₆ ICP process. These findings underscore the applicability and versatility of the etchant in both the electronic and photonic domains and are particularly applicable to the development of N-polar deep-recess HEMTs. Full article

We report that, for the first time, a low-temperature GaN (LT-GaN) layer prepared by metal–organic chemical vapor deposition (MOCVD) regrowth was used as a Mg stopping layer (MSL) for a GaN trench current–aperture vertical electron transistor (CAVET) with p-GaN as a carrier blocking layer (CBL). Inserting LT-GaN on top of the p-GaN effectively suppresses Mg out-diffusion into the regrown AlGaN/GaN channel, contributing to the high current capability of GaN vertical devices with a p-GaN CBL. With different MOCVD growth conditions, MSLs inserted in trench CAVETs were comprehensively investigated for the influence of MSL regrowth temperature and thickness on device performance. With the best on-state current performance obtained in this study, the trench CAVET with a 100 nm thick MSL regrown at 750 °C shows a high drain current of 3.2 kA/cm² and a low on-state resistance of 1.2 mΩ∙cm². The secondary ion mass spectrometry (SIMS) depth profiles show that the trench CAVET with the 100 nm thick MSL regrown at 750 °C has a dramatically decreased Mg diffusion decay rate (~39 nm/decade) in AlGaN/GaN channel, compared to that of the CAVET without a MSL (~104 nm/decade). In developing GaN vertical devices embedded with a Mg-doped p-type layer, the LT-GaN as the MSL demonstrates a promising approach to effectively isolate Mg from the subsequently grown layers. Full article

In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase design provides a variable capacitance through the gate-dielectric-semiconductor interface, which results in a high breakdown voltage of 1.52 kV and maintains a channel on-resistance of 2.61 mΩ∙cm². Because of the variable length and doping profile in the channel region, this model offers greater flexibility to meet a wide range of device application requirements. Full article

Plant growth regulators (PGRs) are natural hormones and synthetic hormone analogues. At low concentrations, PGRs have the ability to influence cell division, cell expansion, and cell structure and function, in addition to mediating environmental stress. In this study, experiments were conducted to determine how exogenous PGRs indole acetic acid (IAA), abscisic acid (ABA), and gibberellic acid (GA) influenced osmotic regulatory substances and activity of antioxidant enzymes in Nitraria tangutorum. Using a completely randomized design, IAA, ABA, and GA3 were applied as foliar spray at concentrations of 50 mg/L, 100 mg/L, 150 mg/L, and 200 mg/L to N. tangutorum shrubs. Some selected shrubs did not receive any treatment and served as the control (Ck). The results showed that the foliar spray of IAA, ABA, and GA3 significantly increased the content of osmotic regulatory substances (soluble sugar, soluble protein, and proline) and antioxidant enzymes (SOD and POD) at most concentrations. In addition, the malondialdehyde (MDA) content significantly reduced after treatment, but after regrowth of coppiced shrubs, lipid peroxidation increased and was still lower than Ck. Our study provides evidence that 100 mg/L 150 mg/L, and 200 mg/L concentrations of IAA, ABA, and GA3 treatments are effective for enhancing osmotic regulatory substances and the activity of antioxidant enzymes in N. tangutorum, which offers an effective strategy not only for increasing tolerance to abiotic and biotic stresses, but also improving the adaptability of N. tangutorum shrubs to the environment. Full article

In this paper, we report the fabrication and characterization of L_g = 50 nm Gate-All-Around (GAA) In_0.53Ga_0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In_0.53Ga_0.47As NS MOSFETs feature a bi-layer high-k dielectric layer of Al₂O₃/HfO₂, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with L_g = 50 nm, W_NS = 200 nm and t_NS = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (g_{m_max} = 1.86 mS/μm and I_ON = 0.4 mA/μm) at V_DS = 0.5 V. To the best of our knowledge, this is the first demonstration of In_xGa_1-xAs GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices. Full article

Periodic and repeated water scarcity has become an increasing concern on grasslands, causing not only to a reduction in productivity but also negative alterations in the carbon balance. The objective of this work was to comprehensively investigate some physiological performance traits of forage grasses, their roots morphometric features and distribution of biomass under simulated water deficit applied in different terms over a period of study. Plants were exposed to water shortage for 21 days, and then grown in optimal substrate moisture conditions. The gas exchange parameters and the main traits of root system architecture of three grass forage species and their cultivars were analyzed: Festulolium braunii (Richt.) A. Camus, cvs. Felopa and Sulino, Lolium perenne L., cvs. Bajka and Gagat and Festuca arundinacea Schreb. cvs. Odys and Rahela. Rapid decrease in the values of parameters related to the gas exchange process in grasses in the following days of water shortage was noticed. Water use efficiency (WUE) value was low in drought conditions due to increased transpiration of plants and was associated with a low C:N ratio in shoots. No obvious, positive effect of previously experienced drought stress on survival of tested grass species after another stress was observed. Cutting of plants after drought period most probably underlied the lack of memory and also additional factor weakened plant regrowth. When the drought was applied for the second time in spring during intensive plant growth, higher biomass allocation to the roots was observed. It was associated with the reduction of plant dry biomass, a decrease of carbon accumulation and the C:N ratio in the shoots. Due to the drought applied for the second time in summer, some biometric features of the roots were strongly and positively correlated with WUE, which is an important feature from the point of view of yield optimization and moisture use by plants. Full article

In this paper, we present an adaptive modeling and linearization algorithm using the weighted memory polynomial model (W-MPM) implemented in a chain involving the indirect learning approach (ILA) as a linearization technique. The main aim of this paper is to offer an alternative to correcting the undesirable effect of spectral regrowth based on modeling and linearization stages, where the 1-dB compression point (P1dB) of a nonlinear device caused by memory effects within a short time is considered. The obtained accuracy is tested for a highly nonlinear behavior power amplifier (PA) properly measured using a field-programmable gate array (FPGA) system. The adaptive modeling stage shows, for the two PAs under test, performances with accuracies of −32.72 dB normalized mean square error (NMSE) using the memory polynomial model (MPM) compared with −38.03 dB NMSE using the W-MPM for the (i) 10 W gallium nitride (GaN) high-electron-mobility transistor (HEMT) radio frequency power amplifier (RF-PA) and of −44.34 dB NMSE based on the MPM and −44.90 dB NMSE using the W-MPM for (ii) a ZHL-42W+ at 2000 MHz. The modeling stage and algorithm are suitably implemented in an FPGA testbed. Furthermore, the methodology for measuring the RF-PA under test is discussed. The whole algorithm is able to adapt both stages due to the flexibility of the W-MPM model. The results prove that the W-MPM requires less coefficients compared with a static model. The error vector magnitude (EVM) is estimated for both the static and adaptive schemes, obtaining a considerable reduction in the transmitter chain. The development of an adaptive stage such as the W-MPM is ideal for digital predistortion (DPD) systems where the devices under test vary their electrical characteristics due to use or aging degradation. Full article

Rare soil organisms are normally considered of less importance for ecosystem functioning. We present results that oppose this view. In otherwise well-aerated soils, anaerobic/microaerophilic production or consumption of the trace gas N₂O occurs in small soil volumes, when intense decomposition activity at the site leads to local oxygen depletion. At such patch scales, the control of microbial growth and oxygen consumption may depend on the specific organisms present. We assessed N₂O turnover in an experiment, where soil dilution from 10⁻² over 10⁻⁴ to 10⁻⁶ followed by microbial regrowth resulted in similar microbial biomass and respiration but reduced diversity. We found an increasing number of very high N₂O turnover rates when soil dilution increased from 10⁻² over 10⁻⁴ to 10⁻⁶, as revealed from a significantly increased skewness of the frequency distribution of N₂O turnover levels. N₂O turnover also tended to increase (p = 0.08) by 20–30% when soil was diluted from 10⁻² to 10⁻⁶. This suggests that rare soil organisms regulate the local activity of fast-growing microorganisms and thus reduce the probability that anoxic/microaerophilic soil volumes develop. Future studies may reveal which less abundant organisms prevent development of anoxic/microaerophilic conditions in well-aerated soils. Full article

A high threshold voltage (V_TH) normally off GaN MISHEMTs with a uniform threshold voltage distribution (V_TH = 4.25 ± 0.1 V at I_DS = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich LPCVD-SiN_x gate insulator. In the conventional GaN MOSFET structure, the carriers were induced by the inversion channel at a high positive gate voltage. However, this design sacrifices the channel mobility and reliability because a huge number of carriers are beneath the gate insulator directly during operation. In this study, a 3-nm ultra-thin Al_0.25Ga_0.75N barrier was adopted to provide a two-dimensional electron gas (2DEG) channel underneath the gate terminal and selective area MOCVD-regrowth layer to improve the ohmic contact resistivity. An Si-rich LPCVD-SiN_x gate insulator was employed to absorb trace oxygen contamination on the GaN surface and to improve the insulator/GaN interface quality. Based on the breakdown voltage, current density, and dynamic R_ON measured results, the proposed LPCVD-MISHEMT provides a potential candidate solution for switching power electronics. Full article

Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficult to be compensated by predistortion algorithms. This paper presents a GaN-based power amplifier design with a reduced level of transmittance distortions, varying in time, without significantly worsening other key features such as output power, efficiency and gain. The test amplifier with GaN-on-Si high electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W of output power at the 62% PAE over a 1.0 GHz to 1.1 GHz frequency range. By applying a proposed design approach, it was possible to decrease phase changes on test pulses from 0.5° to 0.2° and amplitude variation from 0.8 dB to 0.2 dB during the pulse width of 40 µs and 40% duty cycle. Full article

We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN-MOSFETs fabricated using the regrowth method perform superior characteristics over the other relative devices fabricated using the ion implantation technique. The electron mobility of 100 cm²/V·s, subthreshold of 500 mV/dec, and transconductance of 14 μs/mm are measured in GaN-MOSFETs based on the implantation technique. Meanwhile, the GaN-MOSFETs fabricated using the regrowth method perform the electron mobility, transconductance, and subthreshold of 120 cm²/V s, 18 μs/mm, and 300 mV/dec, respectively. Additionally, the MOSFETs with the regrown p-GaN gate body show the I_on/I_off ratio of approximately 4 × 10⁷_, which is, to our knowledge, among the best results of GaN-MOSFETs to date. This research contributes a valuable information for the design and fabrication of power switching devices based on GaN. Full article

The compliant behavior of densely packed 10 × 10 µm² square patterned InGaN layers on top of porous GaN is demonstrated. The elastic relaxation of the InGaN layers is enabled by the low stiffness of the porous GaN under layer. High resolution X-ray diffraction measurements show that upon InGaN re-growths on these InGaN-on-porous GaN pseudo-substrates, not only was the regrown layer partially relaxed, but the degree of relaxation of the InGaN pseudo-substrate layer on top of the porous GaN also showed an increase in the a-lattice constant. Furthermore, methods to improve the surface morphology of the InGaN layers grown by metal-organic chemical vapor deposition (MOCVD) were explored in order to fabricate InGaN pseudo-substrates for future optoelectronic and electronic devices. The largest a-lattice constant demonstrated in this study using this improved method was 3.209 Å, corresponding to a fully relaxed InGaN film with an indium composition of 0.056. Full article

In this paper, we demonstrate the fabrication of current aperture vertical electron transistors (CAVET) realized with two different epitaxial growth methods. Templates with a p-GaN current blocking layer (CBL) were deposited by metal organic chemical vapor deposition (MOCVD). Channel and barrier layers were then regrown by either molecular beam epitaxy (MBE) or MOCVD. Scanning electron microscope (SEM) images and atomic force microscope (AFM) height profiles are used to identify the different regrowth mechanisms. We show that an AlN interlayer below the channel layer was able to reduce Mg diffusion during the high temperature MOCVD regrowth process. For the low-temperature MBE regrowth, Mg diffusion was successfully suppressed. CAVET were realized on the various samples. The devices suffer from high leakage currents, thus further regrowth optimization is needed. Full article