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Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

1
Compound Semiconductor Technology (CST), RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany
2
Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastr. 72, 79108 Freiburg, Germany
3
AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(4), 377; https://doi.org/10.3390/electronics8040377
Received: 6 March 2019 / Revised: 22 March 2019 / Accepted: 23 March 2019 / Published: 28 March 2019
(This article belongs to the Section Semiconductor Devices)
In this paper, we demonstrate the fabrication of current aperture vertical electron transistors (CAVET) realized with two different epitaxial growth methods. Templates with a p-GaN current blocking layer (CBL) were deposited by metal organic chemical vapor deposition (MOCVD). Channel and barrier layers were then regrown by either molecular beam epitaxy (MBE) or MOCVD. Scanning electron microscope (SEM) images and atomic force microscope (AFM) height profiles are used to identify the different regrowth mechanisms. We show that an AlN interlayer below the channel layer was able to reduce Mg diffusion during the high temperature MOCVD regrowth process. For the low-temperature MBE regrowth, Mg diffusion was successfully suppressed. CAVET were realized on the various samples. The devices suffer from high leakage currents, thus further regrowth optimization is needed. View Full-Text
Keywords: CAVET; current aperture vertical electron transistor; gallium nitride; vertical power devices CAVET; current aperture vertical electron transistor; gallium nitride; vertical power devices
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MDPI and ACS Style

Kotzea, S.; Witte, W.; Godejohann, B.-J.; Marx, M.; Heuken, M.; Kalisch, H.; Aidam, R.; Vescan, A. Comparison of MOCVD and MBE Regrowth for CAVET Fabrication. Electronics 2019, 8, 377. https://doi.org/10.3390/electronics8040377

AMA Style

Kotzea S, Witte W, Godejohann B-J, Marx M, Heuken M, Kalisch H, Aidam R, Vescan A. Comparison of MOCVD and MBE Regrowth for CAVET Fabrication. Electronics. 2019; 8(4):377. https://doi.org/10.3390/electronics8040377

Chicago/Turabian Style

Kotzea, Simon, Wiebke Witte, Birte-Julia Godejohann, Mathias Marx, Michael Heuken, Holger Kalisch, Rolf Aidam, and Andrei Vescan. 2019. "Comparison of MOCVD and MBE Regrowth for CAVET Fabrication" Electronics 8, no. 4: 377. https://doi.org/10.3390/electronics8040377

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