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Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods

GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Industrial Science and Technology (AIST), Nagoya 4648601, Japan
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Materials 2020, 13(4), 899; https://doi.org/10.3390/ma13040899
Received: 2 January 2020 / Revised: 12 February 2020 / Accepted: 13 February 2020 / Published: 18 February 2020
(This article belongs to the Special Issue Active Functional Materials and Wearable Applications)
We have demonstrated the enhancement-mode n-channel gallium nitride (GaN) metal-oxide field-effect transistors (MOSFETs) on homoepitaxial GaN substrates using the selective area regrowth and ion implantation techniques. Both types of MOSFETs perform normally off operations. The GaN-MOSFETs fabricated using the regrowth method perform superior characteristics over the other relative devices fabricated using the ion implantation technique. The electron mobility of 100 cm2/V·s, subthreshold of 500 mV/dec, and transconductance of 14 μs/mm are measured in GaN-MOSFETs based on the implantation technique. Meanwhile, the GaN-MOSFETs fabricated using the regrowth method perform the electron mobility, transconductance, and subthreshold of 120 cm2/V s, 18 μs/mm, and 300 mV/dec, respectively. Additionally, the MOSFETs with the regrown p-GaN gate body show the Ion/Ioff ratio of approximately 4 × 107, which is, to our knowledge, among the best results of GaN-MOSFETs to date. This research contributes a valuable information for the design and fabrication of power switching devices based on GaN. View Full-Text
Keywords: gallium nitride; metal-oxide field-effect transistors; fabrication gallium nitride; metal-oxide field-effect transistors; fabrication
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Nguyen, H.T.; Yamada, H.; Yamada, T.; Takahashi, T.; Shimizu, M. Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods. Materials 2020, 13, 899.

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